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IS61LV25616AL-10BI-TR

Integrated Silicon Solution

IS61LV25616AL-10BI-TR by Integrated Silicon Solution

IS61LV25616AL-10BI-TR by Integrated Silicon Solution is a 256Kx16 SRAM with a 3.3V supply voltage and an operating temperature range of -40 to 85°C. It features a parallel interface and has a max access time of 10ns. This memory IC is commonly used in industrial applications requiring high-speed data storage.

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 7,605 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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AZTECH Wire

Italy . 545 parts In-Stock

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$13.470

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$13.470

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Aranea Global

USA . 50 parts In-Stock

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Overview

Experience the next level of memory technology with the IS61LV25616AL-10BI-TR from Integrated Silicon Solution. As a leading manufacturer in the industry, ISS offers top-quality products that are trusted by professionals worldwide. The IS61LV25616AL-10BI-TR belongs to the SRAM category and is designed for high-performance applications. With its common input/output type and asynchronous operating mode, this product delivers superior functionality and reliability. Its compact rectangular shape and surface mount capability make it easy to integrate into any system. Powered by a 3.3V supply voltage, this memory module ensures efficient performance and low power consumption. Whether you're working on industrial automation, telecommunications, or consumer electronics, the IS61LV25616AL-10BI-TR offers unmatched value, benefits, and advantages. Upgrade your projects with this exceptional memory solution today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material provides durability and protection for the SRAM, making it a reliable choice for various applications.

Surface Mount: YES

With surface mount capability, the SRAM can be easily integrated into compact circuit boards, allowing for efficient use of space.

Package Shape: RECTANGULAR

The rectangular package shape simplifies the installation and placement of the SRAM, enabling convenient and streamlined assembly processes.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode offers flexible timing control, allowing the SRAM to adapt to diverse data processing requirements.

Input/Output Type: COMMON

The common input/output type simplifies the interface connections and compatibility with other components, making it easy to integrate the SRAM into existing systems.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V nominal supply voltage ensures efficient power consumption, making the SRAM suitable for low power applications.

Power Supplies (V): 3.3

The 3.3V power supply enables compatibility with standard power sources, enhancing the ease of integration and usability of the SRAM.

No. of Terminals: 48

With 48 terminals, the SRAM provides versatile connectivity options for interfacing with other components, ensuring seamless integration into complex systems.

Package Style (Meter): GRID ARRAY, FINE PITCH

The grid array, fine pitch package style facilitates high-speed data transfer and reliable connection between the SRAM and the PCB, making it ideal for high-performance applications.

Maximum Operating Temperature: 85 °C

The maximum operating temperature of 85°C ensures the SRAM's reliability and stability even in demanding environments.

Organization: 256KX16

The 256KX16 organization offers a large memory capacity and a 16-bit data width, making the SRAM suitable for data-intensive tasks and applications.

Output Characteristics: 3-STATE

The 3-STATE output characteristics enable multiple devices to share the same bus, reducing the complexity of system design and enhancing circuit flexibility.

Minimum Standby Voltage: 2 V

The 2V minimum standby voltage ensures efficient power management when the SRAM is idle, minimizing energy consumption and prolonging battery life.

Minimum Operating Temperature: -40 °C

The minimum operating temperature of -40°C guarantees the SRAM's performance and reliability even in extreme environmental conditions.

Terminal Position: BOTTOM

The bottom terminal position simplifies the installation and connection of the SRAM, offering convenience and ease of use in various system designs.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures the SRAM's robustness and reliability in harsh operating environments, making it suitable for industrial applications.

Technology: CMOS

The CMOS technology employed in the SRAM ensures low power consumption, high speed, and compatibility with various logic families, making it a versatile choice for diverse applications.

Parallel or Serial: PARALLEL

The parallel data transfer mode allows for fast and simultaneous data access, making the SRAM efficient for real-time processing and performance-critical tasks.

Terminal Form: BALL

The ball terminal form simplifies the soldering and connection process, providing a reliable electrical interface between the SRAM and the PCB.

Maximum Supply Current: 100 mA

The maximum supply current of 100mA ensures stable and reliable operation of the SRAM, making it suitable for power-constrained applications.

No. of Words: 262144 words

With 262,144 words, the SRAM offers ample storage space for data processing and storage applications, allowing for efficient handling of large volumes of information.

Memory Width: 16

The 16-bit memory width enables the SRAM to process and store data in larger chunks, enhancing performance and efficiency in data-intensive operations.

Terminal Pitch: 0.75 mm

The 0.75mm terminal pitch provides compact connectivity options for the SRAM, delivering high-density integration capabilities in space-constrained designs.

No. of Words Code: 256K

With a 256K words code, the SRAM offers a high memory capacity, enabling it to handle significant amounts of data in various computing and storage applications.

Memory Density: 4194304 bit

The 4,194,304-bit memory density allows the SRAM to store substantial amounts of data, making it suitable for applications requiring large memory capacity.

Memory IC Type: STANDARD SRAM

The standard SRAM memory IC type ensures compatibility and ease of integration with existing system architectures, making it a reliable choice for various applications.

Maximum Standby Current: 0.015 Amp

The maximum standby current of 0.015A ensures efficient power management when the SRAM is not actively accessed, reducing power consumption and extending battery life.

Maximum Access Time: 10 ns

The maximum access time of 10 nanoseconds ensures fast and responsive data access, making the SRAM suitable for high-speed computing and real-time applications.

Technical Specifications

SRAM IS61LV25616AL-10BI-TR attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

10 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B48

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

16

No. of Terminals:

48

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Standby Current:

.015 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

100 mA

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Trade Compliance

IS61LV25616AL-10BI-TR Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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