Loading...

Integrated Silicon Solution SRAM 78

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Reverse Pinout Screening Level Maximum Seated Height Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
IS62WV1288DBLL-45HLI by Integrated Silicon Solution

IS62WV1288DBLL-45HLI

Integrated Silicon Solution

IS62WV1288DBLL-45HLI by Integrated Silicon Solution is a 128Kx8 SRAM with 3.3V nominal voltage, operating in industrial temperature range. It features asynchronous operation, 45ns access time, and 1048576-bit memory density. Ideal for applications requiring fast and reliable data storage in harsh environments.

45 ns

COMMON

R-PDSO-G32

e3

11.8 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.5/3.3

Not Qualified

1.2 mm

.000004 Amp

1.2 V

SRAMs

8 mA

3.6 V

2.3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

8 mm

IS61WV102416BLL-10MI by Integrated Silicon Solution

IS61WV102416BLL-10MI

Integrated Silicon Solution

IS61WV102416BLL-10MI by Integrated Silicon Solution is a 1MX16 SRAM with 3.3V supply, 10ns access time, and 85°C max temp. Ideal for industrial applications requiring fast and reliable memory storage in a compact grid array package.

10 ns

COMMON

R-PBGA-B48

e0

11 mm

16777216 bit

STANDARD SRAM

16

3

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

235

2.5/3.3

Not Qualified

1.2 mm

.02 Amp

1.2 V

SRAMs

95 mA

3.6 V

2.4 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

BALL

.75 mm

BOTTOM

30

9 mm

IS64WV102416BLL-10MA3 by Integrated Silicon Solution

IS64WV102416BLL-10MA3

Integrated Silicon Solution

IS64WV102416BLL-10MA3 by Integrated Silicon Solution is a 1MX16 SRAM with 3.3V supply, 10ns access time, and 125°C operating temp. Ideal for automotive applications due to AEC-Q100 screening level and thin profile grid array package.

10 ns

COMMON

R-PBGA-B48

e0

11 mm

16777216 bit

STANDARD SRAM

16

3

1

48

1048576 words

1M

ASYNCHRONOUS

125 Cel

-40 Cel

1MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

2.5/3.3

Not Qualified

AEC-Q100

1.2 mm

.05 Amp

1.2 V

SRAMs

140 mA

3.6 V

2.4 V

3.3

YES

CMOS

AUTOMOTIVE

TIN LEAD

BALL

.75 mm

BOTTOM

9 mm

IS61LPS25618A-200TQLI by Integrated Silicon Solution

IS61LPS25618A-200TQLI

Integrated Silicon Solution

IS61LPS25618A-200TQLI by Integrated Silicon Solution is a 256KX18 CACHE SRAM with a max clock frequency of 200 MHz. It operates in synchronous mode and has a min standby voltage of 3.14 V. This memory IC is commonly used in industrial applications requiring high-speed data storage and retrieval.

3.1 ns

PIPELINED ARCHITECTURE

200 MHz

COMMON

R-PQFP-G100

e3

20 mm

4718592 bit

CACHE SRAM

18

1

100

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX18

3-STATE

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

260

2.5/3.3,3.3

Not Qualified

1.6 mm

.000075 Amp

3.14 V

SRAMs

210 mA

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

QUAD

10

14 mm

IS62C5128BL-45QLI by Integrated Silicon Solution

IS62C5128BL-45QLI

Integrated Silicon Solution

IS62C5128BL-45QLI by Integrated Silicon Solution is a 512Kx8 SRAM with 3-STATE output, operating at 5V. It features a small outline package and operates in industrial temperature range. Ideal for applications requiring fast access time and low standby current.

45 ns

COMMON

R-PDSO-G32

e3

20.495 mm

4194304 bit

STANDARD SRAM

8

3

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP32,.56

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.12 mm

.000015 Amp

2 V

SRAMs

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

11.305 mm

IS61LPS25636A-200B3LI by Integrated Silicon Solution

IS61LPS25636A-200B3LI

Integrated Silicon Solution

IS61LPS25636A-200B3LI by Integrated Silicon Solution is a 256Kx36 CACHE SRAM with 3-STATE output, operating at up to 200 MHz. It features a synchronous mode and operates on a supply voltage of 2.5/3.3V, making it suitable for industrial applications requiring fast access times and high memory density. The package style is grid array with thin profile, ideal for space-constrained designs.

3.1 ns

PIPELINED ARCHITECTURE

200 MHz

COMMON

R-PBGA-B165

e1

15 mm

9437184 bit

CACHE SRAM

36

1

165

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.5/3.3,3.3

Not Qualified

1.2 mm

.105 Amp

3.14 V

SRAMs

275 mA

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10

13 mm

IS61WV10248BLL-10MLI by Integrated Silicon Solution

IS61WV10248BLL-10MLI

Integrated Silicon Solution

IS61WV10248BLL-10MLI by Integrated Silicon Solution is a 1MX8 SRAM with 3.6V max supply voltage, 10ns access time, and 85°C max operating temp. Ideal for industrial applications requiring high-speed memory with a parallel interface in a compact grid array package.

10 ns

COMMON

R-PBGA-B48

e1

11 mm

8388608 bit

STANDARD SRAM

8

3

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.5/3.3

Not Qualified

1.2 mm

.025 Amp

1.2 V

SRAMs

100 mA

3.6 V

2.4 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10

9 mm

IS62WV2568EBLL-45HLI by Integrated Silicon Solution

IS62WV2568EBLL-45HLI

Integrated Silicon Solution

IS62WV2568EBLL-45HLI by Integrated Silicon Solution is an 256Kx8 SRAM with a max access time of 45ns. Operating at 3V, it features a parallel interface and industrial temperature grade suitable for various memory applications. The package style is small outline, thin profile, making it ideal for space-constrained designs.

45 ns

R-PDSO-G32

e3

2097152 bit

STANDARD SRAM

8

3

1

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

DUAL

10

IS66WVE4M16TBLL-70BLI by Integrated Silicon Solution

IS66WVE4M16TBLL-70BLI

Integrated Silicon Solution

IS66WVE4M16TBLL-70BLI by Integrated Silicon Solution is a 4MX16 SRAM with 3-STATE output, operating in asynchronous mode. It features a memory density of 67108864 bit and offers a max access time of 70 ns. Ideal for industrial applications requiring fast and reliable parallel memory operations at temperatures ranging from -40 to 85°C.

70 ns

COMMON

R-PBGA-B48

e1

8 mm

67108864 bit

PSEUDO STATIC RAM

16

1

1

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

NO

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

NO

1.2 mm

.00015 Amp

2.7 V

25 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10

6 mm

IS61WV204816BLL-10TLI by Integrated Silicon Solution

IS61WV204816BLL-10TLI

Integrated Silicon Solution

IS61WV204816BLL-10TLI by Integrated Silicon Solution is a 2MX16 SRAM with 33554432-bit memory density. It operates at an industrial temperature grade of -40 to 85 °C and has a max access time of 10 ns. Ideal for applications requiring fast, asynchronous memory access in compact spaces.

10 ns

R-PDSO-G48

18.4 mm

33554432 bit

STANDARD SRAM

16

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

3.6 V

2.4 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

12 mm

IS64WV204816BLL-12CTLA3 by Integrated Silicon Solution

IS64WV204816BLL-12CTLA3

Integrated Silicon Solution

IS64WV204816BLL-12CTLA3 by Integrated Silicon Solution is a 2MX16 SRAM with 33554432-bit memory density. It operates asynchronously at a max speed of 12 ns and supports a supply voltage range from 2.4V to 3.6V. Ideal for automotive applications, this small outline, thin profile memory IC offers reliable parallel data storage in compact systems.

12 ns

R-PDSO-G48

18.4 mm

33554432 bit

STANDARD SRAM

16

1

48

2097152 words

2M

ASYNCHRONOUS

125 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

3.6 V

2.4 V

3

YES

CMOS

AUTOMOTIVE

GULL WING

.5 mm

DUAL

NOT SPECIFIED

12 mm

IS61C1024AL-12KLI-TR by Integrated Silicon Solution

IS61C1024AL-12KLI-TR

Integrated Silicon Solution

IS61C1024AL-12KLI-TR by Integrated Silicon Solution is a 128Kx8 SRAM with 12ns access time, operating at 5V. It features a small outline package, asynchronous operation, and 3-state output. Ideal for industrial applications requiring fast and reliable memory storage.

12 ns

COMMON

R-PDSO-J32

20.95 mm

1048576 bit

STANDARD SRAM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ32,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

Not Qualified

3.76 mm

.00045 Amp

2 V

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

J BEND

1.27 mm

DUAL

10.16 mm

IS62WV51216GBLL-45TLI by Integrated Silicon Solution

IS62WV51216GBLL-45TLI

Integrated Silicon Solution

IS62WV51216GBLL-45TLI by Integrated Silicon Solution is a 512Kx16 SRAM with a memory density of 8388608 bits. It operates in asynchronous mode with a max access time of 45 ns, suitable for industrial applications requiring fast and reliable data storage. The memory IC type is standard SRAM, featuring parallel interface and low power consumption at supply voltages ranging from 2.2V to 3.6V.

45 ns

R-PDSO-G48

18.4 mm

8388608 bit

STANDARD SRAM

16

1

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

12 mm

IS62WV51216HBLL-45B2LI by Integrated Silicon Solution

IS62WV51216HBLL-45B2LI

Integrated Silicon Solution

IS62WV51216HBLL-45B2LI by Integrated Silicon Solution is a 512Kx16 SRAM with 8388608-bit memory density. It operates at 3V, has a max access time of 45ns, and supports asynchronous mode. Ideal for industrial applications requiring fast and reliable data storage in compact devices.

45 ns

R-PBGA-B48

8 mm

8388608 bit

STANDARD SRAM

16

1

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1 mm

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

NOT SPECIFIED

6 mm

IS61VPS204836B-250B3L-TR by Integrated Silicon Solution

IS61VPS204836B-250B3L-TR

Integrated Silicon Solution

IS61VPS204836B-250B3L-TR by Integrated Silicon Solution is a 2MX36 CACHE SRAM with 75497472 bit memory density. It operates at 2.5V, has a memory width of 36 bits, and offers a max access time of 2.8 ns. Ideal for applications requiring fast synchronous memory with high storage capacity in commercial temperature environments.

2.8 ns

PIPELINED ARCHITECTURE

R-PBGA-B165

15 mm

75497472 bit

CACHE SRAM

36

1

165

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX36

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

2.625 V

2.375 V

2.5

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

13 mm

IS61VPS204836B-250B3LI-TR by Integrated Silicon Solution

IS61VPS204836B-250B3LI-TR

Integrated Silicon Solution

IS61VPS204836B-250B3LI-TR by Integrated Silicon Solution is a 2MX36 CACHE SRAM with 75497472 bit memory density. It operates in synchronous mode at 2.5V, with a max access time of 2.8 ns. Ideal for industrial applications requiring fast and reliable parallel memory solutions.

2.8 ns

PIPELINED ARCHITECTURE

R-PBGA-B165

15 mm

75497472 bit

CACHE SRAM

36

1

165

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX36

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

2.625 V

2.375 V

2.5

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

13 mm

IS61WV204816BLL-10TLI-TR by Integrated Silicon Solution

IS61WV204816BLL-10TLI-TR

Integrated Silicon Solution

IS61WV204816BLL-10TLI-TR by Integrated Silicon Solution is a 2MX16 SRAM with 33554432-bit memory density. It operates at 3V, has a max access time of 10ns, and supports asynchronous mode. Ideal for industrial applications requiring fast and reliable parallel memory storage.

10 ns

R-PDSO-G48

18.4 mm

33554432 bit

STANDARD SRAM

16

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

12 mm

IS62WV102416DBLL-45TLI-TR by Integrated Silicon Solution

IS62WV102416DBLL-45TLI-TR

Integrated Silicon Solution

IS62WV102416DBLL-45TLI-TR by Integrated Silicon Solution is a 1MX16 SRAM with 1048576 words and 16-bit memory width. Operating at an industrial temperature grade of -40 to 85 °C, it offers a max access time of 45 ns. Ideal for applications requiring fast and reliable data storage in harsh environments.

45 ns

R-PDSO-G48

18.4 mm

16777216 bit

STANDARD SRAM

16

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

3.6 V

2.2 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

12 mm

IS62WV102416FBLL-45BLI-TR by Integrated Silicon Solution

IS62WV102416FBLL-45BLI-TR

Integrated Silicon Solution

IS62WV102416FBLL-45BLI-TR by Integrated Silicon Solution is a 1MX16 SRAM with a memory density of 16Mbit. It operates asynchronously at a max access time of 45ns and has a temperature grade suitable for industrial applications.

45 ns

R-PBGA-B48

8 mm

16777216 bit

STANDARD SRAM

16

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1 mm

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

NOT SPECIFIED

6 mm

IS62WV102416GBLL-45TLI-TR by Integrated Silicon Solution

IS62WV102416GBLL-45TLI-TR

Integrated Silicon Solution

IS62WV102416GBLL-45TLI-TR by Integrated Silicon Solution is a 1MX16 SRAM with 1048576 words and 16-bit memory width. Operating at -40 to 85 °C, it has a max access time of 45 ns and uses CMOS technology. Ideal for industrial applications requiring fast, asynchronous memory with a supply voltage range of 2.2V to 3.6V.

45 ns

R-PDSO-G48

18.4 mm

16777216 bit

STANDARD SRAM

16

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

12 mm

IS62WV10248EBLL-45TLI-TR by Integrated Silicon Solution

IS62WV10248EBLL-45TLI-TR

Integrated Silicon Solution

IS62WV10248EBLL-45TLI-TR by Integrated Silicon Solution is a 1MX8 SRAM with 1048576 words and 8388608 bit memory density. Operating at -40 to 85 °C, it has a max access time of 45 ns. Ideal for industrial applications requiring fast, asynchronous memory with a parallel interface.

45 ns

R-PDSO-G44

18.41 mm

8388608 bit

STANDARD SRAM

8

1

44

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX8

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

NOT SPECIFIED

10.16 mm

IS62WV51216GBLL-45TLI-TR by Integrated Silicon Solution

IS62WV51216GBLL-45TLI-TR

Integrated Silicon Solution

IS62WV51216GBLL-45TLI-TR by Integrated Silicon Solution is a 512Kx16 SRAM with a max access time of 45ns. Operating at 3V, it features an industrial temperature grade and parallel interface. Ideal for applications requiring fast and reliable memory storage in compact electronic devices.

45 ns

R-PDSO-G48

18.4 mm

8388608 bit

STANDARD SRAM

16

1

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

12 mm

IS66WVE4M16EALL-70BLI-TR by Integrated Silicon Solution

IS66WVE4M16EALL-70BLI-TR

Integrated Silicon Solution

IS66WVE4M16EALL-70BLI-TR by Integrated Silicon Solution is a 4MX16 SRAM with 67108864-bit memory density. It operates in asynchronous mode with a max access time of 70ns. Ideal for industrial applications requiring high-speed parallel memory solutions.

70 ns

R-PBGA-B48

8 mm

67108864 bit

PSEUDO STATIC RAM

16

1

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.2 mm

1.95 V

1.7 V

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

NOT SPECIFIED

6 mm

IS66WVH16M8ALL-166B1LI-TR by Integrated Silicon Solution

IS66WVH16M8ALL-166B1LI-TR

Integrated Silicon Solution

IS66WVH16M8ALL-166B1LI-TR by Integrated Silicon Solution is a 16MX8 SRAM with a package body material of PLASTIC/EPOXY. It operates in synchronous mode with a nominal voltage of 1.8V and has a memory density of 134217728 bits. This memory IC type is commonly used in industrial applications requiring high-speed data storage.

R-PBGA-B24

8 mm

134217728 bit

PSEUDO STATIC RAM

8

1

24

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

IS66WVH8M8ALL-166B1LI-TR by Integrated Silicon Solution

IS66WVH8M8ALL-166B1LI-TR

Integrated Silicon Solution

IS66WVH8M8ALL-166B1LI-TR by Integrated Silicon Solution is an 8MX8 SRAM with 67108864-bit memory density. Operating at 1.8V, it offers a synchronous mode with a max access time of 36ns. Ideal for industrial applications requiring high-speed parallel memory solutions.

36 ns

R-PBGA-B24

8 mm

67108864 bit

PSEUDO STATIC RAM

8

1

24

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

IS66WVH8M8BLL-100B1LI-TR by Integrated Silicon Solution

IS66WVH8M8BLL-100B1LI-TR

Integrated Silicon Solution

IS66WVH8M8BLL-100B1LI-TR by Integrated Silicon Solution is an 8MX8 SRAM with a memory density of 67108864 bit. It operates in synchronous mode with a max access time of 40 ns, suitable for industrial applications requiring fast and reliable parallel memory storage. The package style is grid array, thin profile, making it ideal for space-constrained designs.

40 ns

R-PBGA-B24

8 mm

67108864 bit

PSEUDO STATIC RAM

8

1

24

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

IS64WV102416BLL-10MLA3-TR by Integrated Silicon Solution

IS64WV102416BLL-10MLA3-TR

Integrated Silicon Solution

IS64WV102416BLL-10MLA3-TR by Integrated Silicon Solution is a 1MX16 SRAM with 10ns access time, operating at 3.3V. It features a thin profile grid array package suitable for automotive applications. This CMOS memory IC has a density of 16Mbit and operates in parallel mode with a temperature range of -40 to 125°C.

10 ns

R-PBGA-B48

11 mm

16777216 bit

STANDARD SRAM

16

1

48

1048576 words

1M

ASYNCHRONOUS

125 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

1.2 mm

3.6 V

2.4 V

3.3

YES

CMOS

AUTOMOTIVE

BALL

.75 mm

BOTTOM

9 mm

IS66WVH8M8DALL-200B1LI by Integrated Silicon Solution

IS66WVH8M8DALL-200B1LI

Integrated Silicon Solution

IS66WVH8M8DALL-200B1LI is an 8MX8 SRAM with 200 MHz clock frequency, 1.7-1.95 V supply voltage, and 85°C operating temperature. Ideal for industrial applications requiring high-speed synchronous memory with a thin profile grid array package.

200 MHz

COMMON

R-PBGA-B24

8 mm

67108864 bit

PSEUDO STATIC RAM

8

1

1

24

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

3-STATE

NO

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

1.2 mm

.00004 Amp

1.7 V

40 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

6 mm

IS66WVS4M8ALL-104NLI by Integrated Silicon Solution

IS66WVS4M8ALL-104NLI

Integrated Silicon Solution

IS66WVS4M8ALL-104NLI by Integrated Silicon Solution is a 4MX8 SRAM with synchronous operation and 104 MHz clock frequency. It has a memory density of 33554432 bit and operates at an industrial temperature grade. Ideal for applications requiring high-speed data processing in compact electronic devices.

104 MHz

COMMON

R-PDSO-G8

4.9 mm

33554432 bit

STANDARD SRAM

8

1

1

8

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX8

NO

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

1.75 mm

.0002 Amp

1.65 V

15 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

3.9 mm

IS66WVS2M8BLL-104NLI by Integrated Silicon Solution

IS66WVS2M8BLL-104NLI

Integrated Silicon Solution

IS66WVS2M8BLL-104NLI by Integrated Silicon Solution is a 2MX8 SRAM with synchronous operation and 104 MHz clock frequency. It has a memory density of 16Mb and operates at an industrial temperature grade. Ideal for applications requiring fast, reliable memory storage in compact electronic devices.

104 MHz

COMMON

R-PDSO-G8

4.9 mm

16777216 bit

STANDARD SRAM

8

1

1

8

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX8

NO

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

1.75 mm

.0002 Amp

2.7 V

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

3.9 mm