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IS61LV25616AL-10BLI-TR

Integrated Silicon Solution

IS61LV25616AL-10BLI-TR by Integrated Silicon Solution

IS61LV25616AL-10BLI-TR is a 256Kx16 SRAM with 10ns access time, operating at 3.3V. It features a grid array package style and supports asynchronous operation. Ideal for industrial applications requiring fast and reliable memory storage in compact form factors.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,538 parts In-Stock

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5,538

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Nova Conductors

Japan . 300 parts In-Stock

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300

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 381 parts In-Stock

1+ parts

$19.695

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381

$19.695

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Aranea Global

USA . 500 parts In-Stock

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Overview

Elevate your electronic devices to the next level with the IS61LV25616AL-10BLI-TR by Integrated Silicon Solution. As a leading manufacturer in the industry, ISS delivers top-quality SRAM memory solutions that are perfect for a wide range of applications. With its reliable performance and innovative design, this product offers customers unparalleled value, benefits, and advantages. Upgrade your products with the best in memory technology and experience enhanced efficiency and productivity like never before. Choose ISS for superior quality and performance that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Surface Mount: YES

Allows for easy installation onto circuit boards, making it suitable for high-volume production.

Nominal Supply Voltage / Vsup (V): 3.3

Operates efficiently at a standard voltage level, ensuring compatibility with a wide range of systems.

Package Style (Meter): GRID ARRAY, FINE PITCH

Enables a compact design and efficient use of space on the circuit board, ideal for applications with limited space.

Technology: CMOS

Provides low power consumption and high noise immunity, making it an energy-efficient choice for electronic devices.

Memory Density: 4194304 bit

Offers a high storage capacity for data, suitable for storing large amounts of information in various applications.

Maximum Access Time: 10 ns

Provides fast data access speeds, ensuring quick and efficient performance in data-intensive tasks.

Technical Specifications

SRAM IS61LV25616AL-10BLI-TR attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

10 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B48

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

16

No. of Terminals:

48

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Standby Current:

.015 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

100 mA

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Trade Compliance

IS61LV25616AL-10BLI-TR Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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