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RECTANGULAR Flash Memory 1,448

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
AT49F002NT-90PC by Atmel

AT49F002NT-90PC

Atmel

Atmel's AT49F002NT-90PC is a 256Kx8 NOR flash memory with 262144 words. Operating at 5V, it offers fast access time of 90ns and low standby current of 0.0001Amp. Ideal for applications requiring high-speed data storage in commercial-grade environments.

90 ns

HARDWARE DATA PROTECTION

TOP

YES

YES

R-PDIP-T32

e0

42.05 mm

2097152 bit

FLASH

8

1

1

1,2,1,1

32

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

5

Not Qualified

5.59 mm

16K,8K,96K,128K

.0001 Amp

Flash Memories

90 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

YES

NOR TYPE

15.24 mm

AT49F002N-55JI by Atmel

AT49F002N-55JI

Atmel

Atmel's AT49F002N-55JI is a 256Kx8 NOR flash memory chip with 262144 words. Operating at 5V, it offers fast access time of 55ns and low standby current of 0.0003Amp. Ideal for industrial applications requiring reliable non-volatile memory storage in compact form factor.

55 ns

BOTTOM

YES

YES

R-PQCC-J32

e0

13.97 mm

2097152 bit

FLASH

8

2

1

1,2,1,1

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

225

5

5

Not Qualified

3.55 mm

16K,8K,96K,128K

.0003 Amp

Flash Memories

90 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

MT29F1G08ABBDAH4-ITX:D by Micron Technology

MT29F1G08ABBDAH4-ITX:D

Micron Technology

Micron Technology's MT29F1G08ABBDAH4-ITX:D is a 128MX8 SLC NAND flash memory with 1.8V programming voltage, 1K sectors, and 100000 write/erase cycles. It operates in industrial temperature grades, has a package style of GRID ARRAY, and is suitable for applications requiring high endurance and reliability.

YES

NO

10

100000 Write/Erase Cycles

R-PBGA-B63

e1

11 mm

1073741824 bit

FLASH

8

1

1K

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

260

1.8

YES

1 mm

128K

.00005 Amp

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

HARDWARE

M29W512GH70N3E by Micron Technology

M29W512GH70N3E

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Programming Voltage (V): 2.7;

80 ns

8

R-PDSO-G56

18.4 mm

536870912 bit

FLASH

16

1

56

33554432 words

32M

SYNCHRONOUS

125 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

2.7

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

GULL WING

.5 mm

DUAL

NOT SPECIFIED

14 mm

M28W320CT90N6 by STMicroelectronics

M28W320CT90N6

STMicroelectronics

M28W320CT90N6 from STMicroelectronics is a 32Mbit NOR Flash memory with a 90 ns access time, operating b/w -40 °C to 85°C. It features an asynchronous mode and supports dual terminal positioning for efficient surface mounting. Ideal for industrial applications requiring reliable data storage.

90 ns

TOP BOOT BLOCK

TOP

YES

YES

NO

R-PDSO-G48

e0

18.4 mm

33554432 bit

FLASH

16

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3,3/3.3

3

Not Qualified

1.2 mm

4K,32K

.000005 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

M29F010B45K1 by STMicroelectronics

M29F010B45K1

STMicroelectronics

M29F010B45K1 from STMicroelectronics is a 1Mb NOR Flash memory with a 5V supply, featuring an asynchronous operating mode and a max access time of 45 ns. It supports up to 100,000 write/erase cycles and operates in commercial temperature ranges. Ideal for embedded applications, it comes in a compact chip carrier package with 32 terminals.

45 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e0

13.97 mm

1048576 bit

FLASH

8

1

8

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

5

Not Qualified

3.56 mm

16K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

M29F010B70K6T by STMicroelectronics

M29F010B70K6T

STMicroelectronics

M29F010B70K6T from STMicroelectronics is a 1Mb NOR Flash memory with a 5V supply, featuring an asynchronous operating mode and a max access time of 70 ns. It supports industrial applications with -40 °C to 85 °C temp range and offers 100k write/erase cycles. This compact chip carrier design ensures reliable performance in various electronic devices.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e0

13.97 mm

1048576 bit

FLASH

8

1

8

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

5

Not Qualified

3.56 mm

16K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

M29F010B70N1 by STMicroelectronics

M29F010B70N1

STMicroelectronics

M29F010B70N1 from STMicroelectronics is a 1Mb NOR Flash memory with a 5V supply, featuring an asynchronous operating mode and a max access time of 70 ns. It supports up to 100K write/erase cycles and comes in a compact SOIC package. Ideal for embedded applications requiring reliable data storage.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PDSO-G32

e0

18.4 mm

1048576 bit

FLASH

8

1

8

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

TSSOP

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

5

5

Not Qualified

1.2 mm

16K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

M29W040B55N1 by STMicroelectronics

M29W040B55N1

STMicroelectronics

M29W040B55N1 from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, featuring an asynchronous operating mode and 55 ns max access time. It supports up to 100K write/erase cycles, ideal for embedded applications. Its compact SOIC package ensures efficient space utilization in designs.

55 ns

YES

YES

100000 Write/Erase Cycles

R-PDSO-G32

e0

18.4 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3

3

Not Qualified

1.2 mm

64K

.0001 Amp

Flash Memories

20 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

M29W040B70N1 by STMicroelectronics

M29W040B70N1

STMicroelectronics

M29W040B70N1 from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, featuring an asynchronous operating mode and a max access time of 70 ns. It supports up to 100K write/erase cycles, making it ideal for embedded applications. Its compact SOIC package ensures efficient space utilization in electronic designs.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PDSO-G32

e0

18.4 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

2.7

Not Qualified

1.2 mm

64K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

M29W040B90K1 by STMicroelectronics

M29W040B90K1

STMicroelectronics

M29W040B90K1 from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, featuring an asynchronous operating mode and a max access time of 90 ns. It supports up to 100,000 write/erase cycles and operates in temperatures from 0 °C to 70 °C. Ideal for embedded applications, it offers reliable data storage in compact designs.

90 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e0

13.97 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3/3.3

2.7

Not Qualified

3.56 mm

64K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

M29W040B90K6 by STMicroelectronics

M29W040B90K6

STMicroelectronics

M29W040B90K6 from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, featuring an asynchronous operating mode and a max access time of 90 ns. It supports industrial applications with a temp range of -40 °C to 85 °C and offers 100k write/erase cycles. Ideal for embedded systems, it comes in a compact chip carrier package with quad terminals.

90 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e0

13.97 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3/3.3

2.7

Not Qualified

3.56 mm

64K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

M29W040B90N1 by STMicroelectronics

M29W040B90N1

STMicroelectronics

M29W040B90N1 from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, featuring an asynchronous operating mode and a max access time of 90 ns. It supports up to 100K write/erase cycles, making it ideal for embedded applications. Its compact SOIC package ensures efficient space utilization in electronic designs.

90 ns

YES

YES

100000 Write/Erase Cycles

R-PDSO-G32

e0

18.4 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

2.7

Not Qualified

1.2 mm

64K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

M29W200BB55N1 by STMicroelectronics

M29W200BB55N1

STMicroelectronics

M29W200BB55N1 from STMicroelectronics is a 2Mbit NOR Flash memory with a 3.3V supply, featuring a fast access time of 55 ns and endurance of 100K write/erase cycles. It operates asynchronously in a compact SOIC package, ideal for embedded applications. With dual terminals and support for data polling, it ensures reliable performance in various electronic devices.

55 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e0

20 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3.3

3

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29W200BB70N1 by STMicroelectronics

M29W200BB70N1

STMicroelectronics

M29W200BB70N1 from STMicroelectronics is a 2Mbit NOR Flash memory with a 3.3V supply, featuring a max access time of 70ns and endurance of 100K write/erase cycles. It operates asynchronously in a compact SOIC package, ideal for embedded applications. With dual terminals and data polling capabilities, it ensures reliable performance in commercial environments.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e0

20 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29W200BB70N6 by STMicroelectronics

M29W200BB70N6

STMicroelectronics

M29W200BB70N6 from STMicroelectronics is a 2Mbit NOR Flash memory with a 3.3V supply, featuring an asynchronous operating mode and a max access time of 70 ns. It supports industrial applications with -40 °C to 85 °C temp range and offers high endurance of 100K write/erase cycles. Its compact SOIC package ensures efficient surface mounting for space-constrained designs.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e0

20 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29W200BT55N1 by STMicroelectronics

M29W200BT55N1

STMicroelectronics

M29W200BT55N1 from STMicroelectronics is a 2Mbit NOR Flash memory with a 3.3V supply, featuring a fast access time of 55 ns and endurance of 100K write/erase cycles. Its compact SOIC package makes it ideal for space-constrained applications. This device operates asynchronously, ensuring efficient data handling in embedded systems.

55 ns

TOP BOOT BLOCK

8

TOP

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e0

20 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3.3

3

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F040B70K1 by STMicroelectronics

M29F040B70K1

STMicroelectronics

M29F040B70K1 from STMicroelectronics is a 512Kx8 NOR Flash memory with a 5V supply, ideal for asynchronous applications. It features a max access time of 70 ns and supports up to 100,000 write/erase cycles. This compact chip carrier is perfect for embedded systems requiring reliable data storage.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e0

13.97 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

5

Not Qualified

3.56 mm

64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

M29F400BB70N3T by STMicroelectronics

M29F400BB70N3T

STMicroelectronics

M29F400BB70N3T from STMicroelectronics is a 5V NOR Flash memory with a 256Kx16 organization, ideal for automotive applications. It features a max access time of 70 ns and supports up to 100k write/erase cycles. Its compact SOIC package ensures efficient surface mounting.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e0

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,7

48

262144 words

256K

ASYNCHRONOUS

125 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

MT28F004B5VG-8BET by Micron Technology

MT28F004B5VG-8BET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 40; Package Code: TSOP1; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

80 ns

BOTTOM BOOT BLOCK

BOTTOM

YES

NO

R-PDSO-G40

e0

18.4 mm

4194304 bit

FLASH

8

1

1,2,1,3

40

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

MT28F004B5VG-8TET by Micron Technology

MT28F004B5VG-8TET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 40; Package Code: TSOP1; Package Shape: RECTANGULAR; Memory Width: 8;

80 ns

TOP BOOT BLOCK

TOP

YES

NO

R-PDSO-G40

e0

18.4 mm

4194304 bit

FLASH

8

1

1,2,1,3

40

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

AT45DB642-TI by Atmel

AT45DB642-TI

Atmel

Atmel's AT45DB642-TI is a 64Mbit NOR Flash Memory with 3V nominal voltage. Operating in synchronous mode, it offers industrial temperature grade and parallel/serial interface. Ideal for applications requiring high memory density and reliable data storage in compact devices.

ORGANISED AS 8192 PAGES OF 1056 BYTES EACH

R-PDSO-G40

e0

18.4 mm

67108864 bit

FLASH

1

3

1

40

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX1

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL/SERIAL

2.7

Not Qualified

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NOR TYPE

10 mm

RC28F256P33BFE by Micron Technology

RC28F256P33BFE

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, THIN PROFILE;

95 ns

BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE

BOTTOM

YES

YES

NO

R-PBGA-B64

e1

13 mm

268435456 bit

FLASH

16

1

4,255

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

2.5/3.3

2.7

Not Qualified

1.2 mm

16K,64K

.00021 Amp

Flash Memories

31 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

M50FW040N1 by STMicroelectronics

M50FW040N1

STMicroelectronics

STMicroelectronics M50FW040N1 is a 512Kx8 NOR Flash Memory with 3.3V supply, operating at 0-70 °C. It features synchronous operation, parallel interface, and GULL WING terminals. Ideal for applications requiring fast access times and high memory density in compact designs.

11 ns

YES

NO

R-PDSO-G40

e0

18.4 mm

4194304 bit

FLASH

8

1

8

40

524288 words

512K

SYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

YES

1.2 mm

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

MTFDDAV120MAV-1AE12ABYY by Micron Technology

MTFDDAV120MAV-1AE12ABYY

Micron Technology

FLASH MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 22; Package Code: SMA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 5.5 V;

R-XSMA-N22

100.45 mm

1030792151040 bit

FLASH MODULE

8

1

22

128849018880 words

120G

ASYNCHRONOUS

70 Cel

0 Cel

120GX8

3-STATE

UNSPECIFIED

SMA

RECTANGULAR

MICROELECTRONIC ASSEMBLY

SERIAL

5

7 mm

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

NO LEAD

SINGLE

MLC NAND TYPE

69.85 mm

AT45DB081B-TC by Atmel

AT45DB081B-TC

Atmel

Atmel's AT45DB081B-TC is a 3V NOR Flash Memory with 1081344X8 organization, SPI serial bus type, and 20MHz clock frequency. Ideal for applications requiring high-speed data transfer and low power consumption in compact electronic devices.

ORGANIZED AS 4096 PAGES OF 264 BYTES EACH

20 MHz

R-PDSO-G28

e0

11.8 mm

8650752 bit

FLASH

8

3

1

28

1081344 words

1081344

SYNCHRONOUS

70 Cel

0 Cel

1081344X8

PLASTIC/EPOXY

TSOP1

TSSOP28,.53,22

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

240

3/3.3

2.7

Not Qualified

1.2 mm

SPI

.00001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.55 mm

DUAL

NOR TYPE

8 mm

HARDWARE

N25Q064A13EW7D0E by Micron Technology

N25Q064A13EW7D0E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; No. of Words: 67108864 words;

108 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

6 mm

67108864 bit

FLASH

1

1

8

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX1

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

3/3.3

2.7

Not Qualified

.8 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

5 mm

HARDWARE/SOFTWARE

M29W400BT55ZA1 by STMicroelectronics

M29W400BT55ZA1

STMicroelectronics

STMicroelectronics M29W400BT55ZA1 is a 256Kx16 NOR Flash Memory with 3.3V supply, operating at -40 to 85 °C. It features 100000 Write/Erase cycles, 55ns access time, and supports asynchronous mode. Ideal for applications requiring high-speed data storage in compact devices.

55 ns

TOP BOOT BLOCK

8

TOP

YES

YES

100000 Write/Erase Cycles

R-PBGA-B48

e1

9 mm

4194304 bit

FLASH

16

1

1,2,1,7

48

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

3.3

3

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

M50FW080N1 by STMicroelectronics

M50FW080N1

STMicroelectronics

STMicroelectronics M50FW080N1 is a 3.3V NOR Flash Memory with 1MX8 organization, 16 sectors of 64K words each, and operates synchronously at up to 70 °C. It is suitable for commercial applications requiring fast access times (11ns) and low standby current (0.0001A), with a compact rectangular package design for surface mounting.

11 ns

YES

NO

R-PDSO-G40

e0

18.4 mm

8388608 bit

FLASH

8

1

16

40

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

64K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

M50FW080N5 by STMicroelectronics

M50FW080N5

STMicroelectronics

M50FW080N5 by STMicroelectronics is a 3.3V NOR Flash Memory with 1MX8 organization, 16 sectors of 64K words each, and operates synchronously at a max temperature of 85 °C. It is ideal for applications requiring fast access times, such as embedded systems and consumer electronics.

11 ns

YES

NO

R-PDSO-G40

e0

18.4 mm

8388608 bit

FLASH

8

1

16

40

1048576 words

1M

SYNCHRONOUS

85 Cel

-20 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

64K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

M29F002BB70K6E by STMicroelectronics

M29F002BB70K6E

STMicroelectronics

M29F002BB70K6E from STMicroelectronics is a NOR flash memory with a 5V supply, featuring 256K x 8 organization and an industrial temperature range of -40 °C to 85 °C. It supports asynchronous operation and offers up to 100,000 write/erase cycles. Ideal for embedded applications requiring reliable data storage.

70 ns

BOTTOM BOOT BLOCK

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

2097152 bit

FLASH

8

1

1,2,1,3

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

5

Not Qualified

3.56 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

M29F002BT70K6E by STMicroelectronics

M29F002BT70K6E

STMicroelectronics

STMicroelectronics M29F002BT70K6E is a 256Kx8 NOR Flash Memory with 262144 words, offering 100000 Write/Erase Cycles. Operating at -40 to 85 °C, it has a supply voltage of 4.5-5.5V and supports asynchronous mode. Ideal for industrial applications requiring fast access time and high endurance.

70 ns

TOP BOOT BLOCK

TOP

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

2097152 bit

FLASH

8

1

1,2,1,3

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

5

Not Qualified

3.56 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

AT26DF161A-SSU by Atmel

AT26DF161A-SSU

Atmel

Atmel's AT26DF161A-SSU is a 16Mx1 NOR flash memory with 70MHz clock frequency, SPI serial bus, and 100K write/erase cycles. Ideal for industrial applications requiring reliable data storage in a compact 8-terminal package with hardware/software write protection.

70 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

4.925 mm

16777216 bit

FLASH

1

1

8

16777216 words

16M

ASYNCHRONOUS

85 Cel

-40 Cel

16MX1

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/3.3

2.7

Not Qualified

1.75 mm

SPI

.000015 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

M29F200BB70M6E by STMicroelectronics

M29F200BB70M6E

STMicroelectronics

M29F200BB70M6E from STMicroelectronics is a 2Mb NOR Flash memory with a 5V supply, featuring an asynchronous operating mode and a max access time of 70 ns. It supports industrial applications with a temp range of -40 °C to 85°C and offers 100K write/erase cycles. This compact SOIC package ensures efficient data storage in embedded systems.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G44

e3

28.5 mm

2097152 bit

FLASH

16

1

1,2,1,3

44

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

5

Not Qualified

YES

3 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

YES

NOR TYPE

12.6 mm

M29F200BT70M6E by STMicroelectronics

M29F200BT70M6E

STMicroelectronics

M29F200BT70M6E from STMicroelectronics is a 2Mb NOR Flash memory with a 5V supply, featuring a max access time of 70 ns and endurance of 100K write/erase cycles. It operates asynchronously in an industrial temp range (-40 °C to 85°C). Ideal for embedded applications requiring reliable data storage.

70 ns

TOP BOOT BLOCK

8

TOP

YES

YES

100000 Write/Erase Cycles

R-PDSO-G44

e3

28.5 mm

2097152 bit

FLASH

16

1

1,2,1,3

44

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

5

Not Qualified

YES

3 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

YES

NOR TYPE

12.6 mm

AT49BV802D-70TU by Atmel

AT49BV802D-70TU

Atmel

Atmel's AT49BV802D-70TU is a 512Kx16 NOR flash memory with 8/15 sectors, operating at -40 to 85°C. It features asynchronous mode, 3V supply, and parallel interface. Ideal for industrial applications requiring fast access times and reliable data storage in a compact package.

70 ns

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e3

18.4 mm

8388608 bit

FLASH

16

3

1

8,15

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4/8

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

8K,64K

.000025 Amp

Flash Memories

25 mA

3.6 V

2.65 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

AT49BV802DT-70TU by Atmel

AT49BV802DT-70TU

Atmel

Atmel's AT49BV802DT-70TU is a 512Kx16 NOR flash memory with 8/15 sectors, operating at -40 to 85°C. It features asynchronous mode, 3V nominal voltage, and parallel interface. Ideal for industrial applications requiring fast access times and reliable data storage in a compact package.

70 ns

8

TOP

YES

YES

YES

R-PDSO-G48

e3

18.4 mm

8388608 bit

FLASH

16

3

1

8,15

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4/8

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

8K,64K

.000025 Amp

Flash Memories

25 mA

3.6 V

2.65 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

AT25DF321-SU by Atmel

AT25DF321-SU

Atmel

Atmel's AT25DF321-SU is a 32Mb NOR Flash Memory with SPI serial bus, operating at 70MHz. It offers 100K Write/Erase cycles, -40 to 85°C temp range, and supports hardware/software write protection. Ideal for industrial applications requiring high endurance and reliable data storage in compact designs.

70 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

e3

5.29 mm

33554432 bit

FLASH

8

2

1

8

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX8

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

3/3.3

2.7

Not Qualified

2.16 mm

SPI

.000025 Amp

Flash Memories

16 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

NOR TYPE

5.24 mm

HARDWARE/SOFTWARE

MX25L3233FM1I-08G by Macronix

MX25L3233FM1I-08G

Macronix

Macronix MX25L3233FM1I-08G is a 32Mb NOR Flash Memory with SPI interface. It operates at 133MHz clock frequency, has 100K Write/Erase cycles endurance, and supports hardware/software write protection. Ideal for industrial applications requiring high-speed data storage in compact form factor.

ALSO ORGANISED AS 32MX1

4

133 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

33554432 bit

FLASH

8

1

8

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3

1.75 mm

SPI

.00005 Amp

17 mA

3.6 V

2.65 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

MX25U3235FBAI-10G by Macronix

MX25U3235FBAI-10G

Macronix

Macronix MX25U3235FBAI-10G is a 32Mb Flash Memory with 104MHz clock frequency, operating at -40 to 85°C. Ideal for industrial applications, it features a synchronous mode, 1.8V supply voltage, and serial interface in a compact grid array package.

ALSO IT CAN BE CONFIGURED AS 32M X 1 BIT

2

104 MHz

R-PBGA-B12

e1

33554432 bit

FLASH

4

3

1

12

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX4

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

1.8

.48 mm

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

MX30LF2G18AC-XKI by Macronix

MX30LF2G18AC-XKI

Macronix

Macronix's MX30LF2G18AC-XKI is a 256MX8 SLC NAND flash memory with 2147483648-bit density. Operating at 3V, it has an industrial temperature grade of -40 to 85°C. With a very thin profile and fine pitch grid array package, it is suitable for high-performance applications requiring reliable non-volatile memory storage.

R-PBGA-B63

11 mm

2147483648 bit

FLASH

8

1

63

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

SLC NAND TYPE

9 mm

JS28F640J3F75A by Micron Technology

JS28F640J3F75A

Micron Technology

Micron Technology's JS28F640J3F75A is a 64Mb NOR flash memory with 4MX16 organization, operating at -40 to 85°C. It features a parallel interface, 4194304 words capacity, and peak reflow temp of 260°C. Ideal for industrial applications requiring fast access times and reliable data storage.

75 ns

8

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

67108864 bit

FLASH

16

1

64

56

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4/8

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

54 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NO

NOR TYPE

14 mm

JS28F640J3F75B by Micron Technology

JS28F640J3F75B

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

75 ns

8

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

67108864 bit

FLASH

16

1

64

56

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4/8

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

54 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NO

NOR TYPE

14 mm

JS28F640J3F75E by Micron Technology

JS28F640J3F75E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; No. of Words: 4194304 words;

75 ns

8

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

67108864 bit

FLASH

16

1

64

56

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4/8

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

54 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NO

NOR TYPE

14 mm

PC28F128J3F75B by Micron Technology

PC28F128J3F75B

Micron Technology

Micron Technology's PC28F128J3F75B is a 128Mb NOR Flash Memory with 8MX16 organization, operating at 3V. It features an industrial temperature grade, parallel interface, and 75ns access time. Ideal for applications requiring high-speed data storage in harsh environments.

75 ns

8

YES

YES

NO

R-PBGA-B64

e1

13 mm

134217728 bit

FLASH

16

1

128

64

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

4/8

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

10 mm

PC28F320J3F75A by Micron Technology

PC28F320J3F75A

Micron Technology

Micron Technology's PC28F320J3F75A is a 32Mb NOR Flash Memory with 2MX16 organization, operating at -40 to 85°C. It features a parallel interface, 1mm terminal pitch, and 80mA max supply current. Ideal for industrial applications requiring fast access times and reliable non-volatile memory storage.

75 ns

8

YES

YES

NO

R-PBGA-B64

e1

13 mm

33554432 bit

FLASH

16

1

32

64

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

4/8

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

10 mm

PC28F640J3F75A by Micron Technology

PC28F640J3F75A

Micron Technology

Micron Technology's PC28F640J3F75A is a 64-terminal NOR flash memory with 4MX16 organization, operating at 3V. With a sector size of 128K words and max access time of 75ns, it is ideal for industrial applications requiring fast and reliable non-volatile memory storage.

75 ns

8

YES

YES

NO

R-PBGA-B64

e1

13 mm

67108864 bit

FLASH

16

1

64

64

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

4/8

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

10 mm

RC28F320J3F75A by Micron Technology

RC28F320J3F75A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Alternate Memory Width: 8;

75 ns

8

YES

YES

NO

R-PBGA-B64

e0

13 mm

33554432 bit

FLASH

16

1

32

64

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

4/8

PARALLEL

235

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn63Pb37)

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

10 mm