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RECTANGULAR Flash Memory 1,448

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
RC28F512M29EWHA by Micron Technology

RC28F512M29EWHA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Common Flash Interface: YES;

100 ns

8

YES

YES

YES

R-PBGA-B64

e0

13 mm

536870912 bit

FLASH

16

1

512

64

33554432 words

32M

ASYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

16/32

PARALLEL

3/3.3

3

Not Qualified

YES

1.4 mm

128K

.000225 Amp

Flash Memories

31 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

YES

NOR TYPE

11 mm

N25Q00AA11GSF40G by Micron Technology

N25Q00AA11GSF40G

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

108 MHz

R-PDSO-G16

10.3 mm

1073741824 bit

FLASH

1

1

16

1073741824 words

1G

SYNCHRONOUS

85 Cel

-40 Cel

1GX1

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

1.8

2.65 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

7.5 mm

CAT28F512G12 by Onsemi

CAT28F512G12

Onsemi

CAT28F512G12 by Onsemi is a 64Kx8 NOR flash memory chip with 524288-bit density. Operating at 5V, it offers 100000 write/erase cycles and has a max access time of 120ns. Ideal for commercial applications requiring high-speed parallel memory with a command user interface.

120 ns

YES

NO

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

524288 bit

FLASH

8

3

1

32

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

260

5

12

Not Qualified

3.55 mm

.00001 Amp

Flash Memories

30 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

40

NO

NOR TYPE

11.43 mm

CAT28F512GI12 by Onsemi

CAT28F512GI12

Onsemi

CAT28F512GI12 by Onsemi is a 64KX8 NOR flash memory chip with 524288 bit density. It operates at 5V, has 100000 Write/Erase cycles endurance, and offers fast access time of 120 ns. Ideal for industrial applications requiring high-speed parallel memory with 32 terminals in a compact chip carrier package.

120 ns

YES

NO

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

524288 bit

FLASH

8

3

1

32

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

12

Not Qualified

3.55 mm

.00001 Amp

Flash Memories

30 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN

J BEND

1.27 mm

QUAD

NO

NOR TYPE

11.43 mm

PC28F640P33T85A by Numonyx

PC28F640P33T85A

Numonyx

Numonyx PC28F640P33T85A is a 64-terminal NOR flash memory with 4MX16 organization, operating at -40 to 85°C. It features a supply voltage range of 2.3V to 3.6V and offers fast access time of 85ns. Ideal for industrial applications requiring high-density parallel memory with thin profile grid array package style.

85 ns

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

TOP

R-PBGA-B64

e1

10 mm

67108864 bit

FLASH

16

1

64

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

3

Not Qualified

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

40

NOR TYPE

8 mm

MX25L51245GMI-10G by Macronix

MX25L51245GMI-10G

Macronix

MX25L51245GMI-10G by Macronix is a 128Mx4 Flash Memory with 536870912 bit density. It operates at 104 MHz clock frequency, has a supply voltage range of 2.7V to 3.6V, and supports synchronous mode. Ideal for industrial applications requiring reliable serial memory storage in compact devices.

CAN BE ORGNISED AS 512 MBIT X 1

2

104 MHz

R-PDSO-G16

e3

10.3 mm

536870912 bit

FLASH

4

3

1

16

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX4

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2.7

2.65 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

40

7.52 mm

MX25L51245GZ2I-10G by Macronix

MX25L51245GZ2I-10G

Macronix

Macronix MX25L51245GZ2I-10G is a 512Mb Flash Memory with synchronous operation, 104 MHz clock frequency, and industrial temperature grade. It has a serial interface, 128M x 4 organization, and operates at voltage range of 2.7V to 3.6V. Ideal for applications requiring high-speed data storage in compact electronic devices.

CAN BE ORGNISED AS 512 MBIT X 1

2

104 MHz

R-PDSO-N8

e3

8 mm

536870912 bit

FLASH

4

3

1

8

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX4

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

2.7

.8 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN

NO LEAD

1.27 mm

DUAL

6 mm

MX25U12835FZNI-08G by Macronix

MX25U12835FZNI-08G

Macronix

Macronix MX25U12835FZNI-08G is a 1.8V NOR flash memory with 32MX4 organization, SPI serial bus, and 133MHz clock frequency. Ideal for industrial applications requiring high endurance of 100K cycles, it offers hardware/software write protection and operates in a temperature range from -40 to 85°C.

ALSO CONFIGURABLE AS 128M X 1

2

133 MHz

10

100000 Write/Erase Cycles

R-PDSO-N8

e3

6 mm

134217728 bit

FLASH

4

3

1

8

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX4

PLASTIC/EPOXY

VSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, VERY THIN PROFILE

SERIAL

1.8

1.8

Not Qualified

.8 mm

SPI

.00002 Amp

Flash Memories

27 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

1.27 mm

DUAL

NOR TYPE

5 mm

HARDWARE/SOFTWARE

MX29GL128FHXFI-70G by Macronix

MX29GL128FHXFI-70G

Macronix

Macronix's MX29GL128FHXFI-70G is a 3V NOR flash memory with 8MX16 organization, 128 sectors, and 128K sector size. Operating at -40 to 85°C, it offers fast access time of 70ns and low standby current of 0.00003A. Ideal for industrial applications requiring high-density parallel flash memory with common interface and asynchronous operation.

70 ns

8

YES

YES

YES

R-PBGA-B64

13 mm

134217728 bit

FLASH

16

1

128

64

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

8/16

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.4 mm

128K

.00003 Amp

Flash Memories

100 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

40

YES

NOR TYPE

11 mm

MX66L1G45GMI-10G by Macronix

MX66L1G45GMI-10G

Macronix

MX66L1G45GMI-10G by Macronix is a 256MX4 Flash Memory with 1073741824 bit density. It operates at 104 MHz clock frequency, suitable for industrial applications. With a package size of 7.52mm x 10.3mm and synchronous mode, it offers high-speed data storage solutions.

ALSO IT CAN BE CONFIGURED AS 1G X 1 BIT

2

104 MHz

R-PDSO-G16

e3

10.3 mm

1073741824 bit

FLASH

4

1

16

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX4

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

2.7

2.65 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN

GULL WING

1.27 mm

DUAL

7.52 mm

MX66L1G45GXDI-10G by Macronix

MX66L1G45GXDI-10G

Macronix

Macronix's MX66L1G45GXDI-10G is a 256MX4 Flash Memory with 1073741824-bit memory density. It operates at 104 MHz clock frequency, suitable for industrial applications. The package style is grid array, thin profile, with a terminal pitch of 1mm and bottom terminal position.

ALSO IT CAN BE CONFIGURED AS 1G X 1 BIT

2

104 MHz

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

4

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX4

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

2.7

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

6 mm

W25Q64FWZPIQ by Winbond Electronics

W25Q64FWZPIQ

Winbond Electronics

Winbond Electronics' W25Q64FWZPIQ is a 64Mbit flash memory with synchronous operation at up to 104MHz. It has a small outline package, operates in industrial temperature range (-40°C to 85°C), and uses serial communication. Ideal for applications requiring high-speed data storage in compact devices.

104 MHz

R-PDSO-N8

6 mm

67108864 bit

FLASH

1

1

8

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX1

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

.8 mm

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

5 mm

MT29F1G01AAADDH4-IT:D by Micron Technology

MT29F1G01AAADDH4-IT:D

Micron Technology

Micron Technology's MT29F1G01AAADDH4-IT:D is a 1GX1 SLC NAND Flash Memory with 1073741824 bit memory density. It operates at 3.3V, has a clock frequency of 50 MHz, and supports serial communication. This industrial-grade memory chip is ideal for applications requiring high-speed data storage in compact devices.

50 MHz

R-PBGA-B63

e1

11 mm

1073741824 bit

FLASH

1

1

63

1073741824 words

1G

SYNCHRONOUS

85 Cel

-40 Cel

1GX1

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

260

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

SLC NAND TYPE

9 mm

EPCQ512SI16N by Altera

EPCQ512SI16N

Altera

EPCQ512SI16N by Altera is a 512M NOR Flash Memory with 536870912-bit memory density. Operating at 3.3V, it offers synchronous mode and serial interface for industrial applications. With small outline package style, it has a max write cycle time of 8ms and operates b/w -40 to 85°C temperature range.

R-PDSO-G16

e4

10.3 mm

536870912 bit

FLASH

1

3

1

16

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX1

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

2.7

2.65 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

NOR TYPE

7.5 mm

8 ms

TC58NVG3S0FTA00 by Toshiba

TC58NVG3S0FTA00

Toshiba

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Organization: 1GX8;

R-PDSO-G48

18.4 mm

8589934592 bit

FLASH

8

1

48

1073741824 words

1G

ASYNCHRONOUS

70 Cel

0 Cel

1GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

12 mm

MT29F1G08ABADAWP:D by Micron Technology

MT29F1G08ABADAWP:D

Micron Technology

Micron Technology's MT29F1G08ABADAWP:D is a 3.3V SLC NAND Flash Memory with 128Mx8 organization, operating in asynchronous mode. It features a page size of 2K words and sector size of 128K words, suitable for commercial applications requiring fast access times and low standby current.

25 ns

YES

NO

R-PDSO-G48

e3

18.4 mm

1073741824 bit

FLASH

8

3

1

1K

48

134217728 words

128M

ASYNCHRONOUS

70 Cel

0 Cel

128MX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

2K

PARALLEL

260

3.3

3.3

Not Qualified

YES

1.2 mm

128K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NO

SLC NAND TYPE

12 mm

MX25L1606EMI-12G by Macronix

MX25L1606EMI-12G

Macronix

Macronix's MX25L1606EMI-12G is a 16-terminal NOR flash memory with 2MX8 organization, SPI serial bus type, and 86 MHz clock frequency. It operates at -40 to 85 °C, has 100000 write/erase cycles endurance, and is ideal for industrial applications requiring high-speed data storage.

1

86 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

10.3 mm

16777216 bit

FLASH

8

1

16

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3/3.3

3

Not Qualified

2.65 mm

SPI

.00002 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

7.52 mm

HARDWARE/SOFTWARE

XCF128XFT64C by Xilinx

XCF128XFT64C

Xilinx

Xilinx XCF128XFT64C is a 1.8V NOR Flash Memory with 8MX16 organization, operating from -40 to 85°C. It has 4 sectors of 127 sizes, parallel interface, and industrial temperature grade. Ideal for applications requiring fast access times and high memory density in compact designs.

85 ns

ASYNCHRONOUS READ MODE

YES

YES

NO

R-PBGA-B64

e0

13 mm

134217728 bit

FLASH

16

3

1

4,127

64

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

4

PARALLEL

225

1.8,1.8/3.3

1.8

Not Qualified

YES

1.2 mm

16K,64K

.000075 Amp

Flash Memories

53 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

10 mm

XCF128XFTG64C by Xilinx

XCF128XFTG64C

Xilinx

Xilinx XCF128XFTG64C is a 1.8V NOR Flash Memory with 8MX16 organization, operating at -40 to 85°C. It features 4 sectors of 127 words each, parallel interface, and a max access time of 85ns. Ideal for industrial applications requiring high-speed memory operations in compact designs.

85 ns

ASYNCHRONOUS READ MODE

YES

YES

NO

R-PBGA-B64

e1

13 mm

134217728 bit

FLASH

16

3

1

4,127

64

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

4

PARALLEL

260

1.8,1.8/3.3

1.8

Not Qualified

YES

1.2 mm

16K,64K

.000075 Amp

Flash Memories

53 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

10 mm

JS28F00AM29EWHA by Micron Technology

JS28F00AM29EWHA

Micron Technology

Micron Technology's JS28F00AM29EWHA is a NOR type Flash Memory with 64MX16 organization, operating at 3V. It features a small outline package, industrial temperature grade, and asynchronous mode. Ideal for applications requiring fast access times and high memory density.

110 ns

8

YES

YES

YES

R-PDSO-G56

e4

18.4 mm

1073741824 bit

FLASH

16

1

1K

56

67108864 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

16/32

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

128K

.00024 Amp

Flash Memories

31 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.5 mm

DUAL

30

YES

NOR TYPE

14 mm

MX29LV320EBXEI-70G by Macronix

MX29LV320EBXEI-70G

Macronix

Macronix's MX29LV320EBXEI-70G is a 32Mb NOR flash memory with 2MX16 organization, operating at 3V. It features an industrial temperature grade, parallel interface, and offers fast access time of 70ns. Ideal for applications requiring high-speed data storage in harsh environments.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

YES

R-PBGA-B48

e1

8 mm

33554432 bit

FLASH

16

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.3 mm

8K,64K

.000015 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

10

YES

NOR TYPE

6 mm

M29F016D70N6 by STMicroelectronics

M29F016D70N6

STMicroelectronics

M29F016D70N6 from STMicroelectronics is a 2M x 8 NOR Flash memory with a 5V supply, ideal for industrial applications. It features a max access time of 70 ns and operates in asynchronous mode. With a temp range of -40 °C to 85°C, it's perfect for harsh environments.

70 ns

YES

YES

YES

R-PDSO-G40

e0

18.4 mm

16777216 bit

FLASH

8

1

32

40

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

YES

1.2 mm

64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

10 mm

MT28F004B3VG-8B by Micron Technology

MT28F004B3VG-8B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 40; Package Code: TSOP1; Package Shape: RECTANGULAR; Boot Block: BOTTOM;

80 ns

BOTTOM BOOT BLOCK

BOTTOM

YES

NO

100000 Write/Erase Cycles

R-PDSO-G40

e0

18.4 mm

4194304 bit

FLASH

8

1

1,2,1,3

40

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

30 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

MT28F400B3SG-8BET by Micron Technology

MT28F400B3SG-8BET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: SOP; Package Shape: RECTANGULAR; Sector Size (Words): 16K,8K,96K,128K;

80 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

100000 Write/Erase Cycles

R-PDSO-G44

e0

28.02 mm

4194304 bit

FLASH

16

1

1,2,1,3

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

3.3

3

Not Qualified

2.8 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

30 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

NO

NOR TYPE

12.6 mm

MT28F400B3SG-8B by Micron Technology

MT28F400B3SG-8B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 44; Package Code: SOP; Package Shape: RECTANGULAR; Type: NOR TYPE;

80 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

100000 Write/Erase Cycles

R-PDSO-G44

e0

28.02 mm

4194304 bit

FLASH

16

1

1,2,1,3

44

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

3.3

3

Not Qualified

2.8 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

30 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

NO

NOR TYPE

12.6 mm

MT28F400B3SG-8TET by Micron Technology

MT28F400B3SG-8TET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: SOP; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;

80 ns

TOP BOOT BLOCK

8

TOP

YES

NO

100000 Write/Erase Cycles

R-PDSO-G44

e0

28.02 mm

4194304 bit

FLASH

16

1

1,2,1,3

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

3.3

3

Not Qualified

2.8 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

30 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

NO

NOR TYPE

12.6 mm

MT28F400B3SG-8T by Micron Technology

MT28F400B3SG-8T

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 44; Package Code: SOP; Package Shape: RECTANGULAR; Terminal Finish: TIN LEAD;

80 ns

TOP BOOT BLOCK

8

TOP

YES

NO

100000 Write/Erase Cycles

R-PDSO-G44

e0

28.02 mm

4194304 bit

FLASH

16

1

1,2,1,3

44

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

3.3

3

Not Qualified

2.8 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

30 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

NO

NOR TYPE

12.6 mm

MT28F400B3WG-8BET by Micron Technology

MT28F400B3WG-8BET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Length: 18.4 mm;

80 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

100000 Write/Erase Cycles

R-PDSO-G48

e0

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,3

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

30 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F400B3WG-8B by Micron Technology

MT28F400B3WG-8B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;

80 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

100000 Write/Erase Cycles

R-PDSO-G48

e0

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,3

48

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

30 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F400B3WG-8TET by Micron Technology

MT28F400B3WG-8TET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Package Equivalence Code: TSSOP48,.8,20;

80 ns

TOP BOOT BLOCK

8

TOP

YES

NO

100000 Write/Erase Cycles

R-PDSO-G48

e0

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,3

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

30 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F400B3WG-8T by Micron Technology

MT28F400B3WG-8T

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 3 V;

80 ns

TOP BOOT BLOCK

8

TOP

YES

NO

100000 Write/Erase Cycles

R-PDSO-G48

e0

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,3

48

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

30 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

PC28F256P33BFE by Micron Technology

PC28F256P33BFE

Micron Technology

Micron Technology's PC28F256P33BFE is a 16Mx16 NOR flash memory with 3V nominal voltage. Operating in synchronous mode, it offers 16K and 64K sector sizes. Ideal for industrial applications, this thin-profile grid array package has a max operating temperature of 85°C.

95 ns

BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE

BOTTOM

YES

YES

NO

R-PBGA-B64

e1

13 mm

268435456 bit

FLASH

16

1

4,255

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

2.5/3.3

3

Not Qualified

1.2 mm

16K,64K

.00021 Amp

Flash Memories

31 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

PC28F256P33BFR by Micron Technology

PC28F256P33BFR

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 3.6 V;

95 ns

BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE

BOTTOM

YES

YES

NO

R-PBGA-B64

e1

13 mm

268435456 bit

FLASH

16

1

4,255

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

2.5/3.3

3

Not Qualified

1.2 mm

16K,64K

.00021 Amp

Flash Memories

31 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

PC28F256P33TFE by Micron Technology

PC28F256P33TFE

Micron Technology

Micron Technology's PC28F256P33TFE is a 16Mx16 NOR flash memory with 3V nominal voltage. Operating in synchronous mode, it offers 16K and 64K sector sizes for industrial applications. With a max operating temperature of 85°C, this thin-profile grid array package has a parallel interface and supports common flash commands.

95 ns

TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE

TOP

YES

YES

NO

R-PBGA-B64

e1

13 mm

268435456 bit

FLASH

16

1

4,255

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

2.5/3.3

3

Not Qualified

1.2 mm

16K,64K

.00021 Amp

Flash Memories

31 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

PC48F4400P0TB0EE by Micron Technology

PC48F4400P0TB0EE

Micron Technology

Micron Technology's PC48F4400P0TB0EE is a 32MX16 Flash Memory with 536Mbit density. Operating at 3V, it offers synchronous mode and 95ns access time. Ideal for industrial applications, this memory has a temperature range of -40 to 85°C and features parallel interface with 1mm terminal pitch.

95 ns

BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE

BOTTOM

R-PBGA-B64

e1

13 mm

536870912 bit

FLASH

16

1

64

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

10 mm

PC48F4400P0TB0EH by Micron Technology

PC48F4400P0TB0EH

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3;

95 ns

BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE

BOTTOM

R-PBGA-B64

e1

13 mm

536870912 bit

FLASH

16

1

64

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

RC28F256P33TFE by Micron Technology

RC28F256P33TFE

Micron Technology

Micron Technology's RC28F256P33TFE is a 16Mx16 NOR flash memory with 268MB density. Operating at 3V, it offers synchronous mode and industrial temperature grade. With 95ns access time, it suits applications requiring fast parallel data storage and retrieval.

95 ns

TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE

TOP

YES

YES

NO

R-PBGA-B64

e1

13 mm

268435456 bit

FLASH

16

1

4,255

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

2.5/3.3

3

Not Qualified

1.2 mm

16K,64K

.00021 Amp

Flash Memories

31 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

RC48F4400P0TB0EJ by Micron Technology

RC48F4400P0TB0EJ

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Finish: TIN SILVER COPPER;

95 ns

BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE

BOTTOM

R-PBGA-B64

e1

13 mm

536870912 bit

FLASH

16

1

64

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

M29F080D70N6 by STMicroelectronics

M29F080D70N6

STMicroelectronics

M29F080D70N6 from STMicroelectronics is a NOR flash memory with 1M x 8 organization, operating at 5V. It features a max access time of 70 ns and operates in temperatures from -40 °C to 85°C, making it ideal for industrial applications. Its compact SOIC package ensures efficient surface mounting.

70 ns

YES

YES

YES

R-PDSO-G40

e0

18.4 mm

8388608 bit

FLASH

8

1

16

40

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

YES

1.2 mm

64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

10 mm

M29F800DB55N1 by STMicroelectronics

M29F800DB55N1

STMicroelectronics

M29F800DB55N1 from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and an access time of 55ns. It features a compact SOIC package, operates asynchronously, and supports data polling for efficient programming. Ideal for embedded applications requiring reliable storage.

55 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,15

48

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F800DB55N6 by STMicroelectronics

M29F800DB55N6

STMicroelectronics

M29F800DB55N6 from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and an access time of 55ns. It features a dual terminal design in a thin profile package, ideal for industrial applications. Operating b/w -40 °C to 85°C, it ensures reliability in harsh environments.

55 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,15

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F800DB70N1 by STMicroelectronics

M29F800DB70N1

STMicroelectronics

M29F800DB70N1 from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and a max access time of 70ns. It features an asynchronous operation mode, dual terminal position, and is ideal for embedded applications requiring reliable data storage. Its compact SOIC package ensures efficient space utilization in electronic designs.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,15

48

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F800DB70N6 by STMicroelectronics

M29F800DB70N6

STMicroelectronics

M29F800DB70N6 from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and an access time of 70ns. It features a dual terminal design in a thin profile package, ideal for industrial applications. Operating b/w -40 °C to 85°C, it ensures reliability in harsh environments.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,15

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F800DT55N1 by STMicroelectronics

M29F800DT55N1

STMicroelectronics

M29F800DT55N1 from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and an access time of 55ns. It features a compact SOIC package, operates asynchronously, and supports data polling for efficient programming. Ideal for embedded applications requiring reliable storage.

55 ns

TOP BOOT BLOCK

8

TOP

YES

YES

YES

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,15

48

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F800DT55N6 by STMicroelectronics

M29F800DT55N6

STMicroelectronics

M29F800DT55N6 from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and an access time of 55ns. It features a dual terminal configuration in a thin SO package, suitable for industrial applications. Operating b/w -40 °C to 85°C, it ensures reliability in diverse environments.

55 ns

TOP BOOT BLOCK

8

TOP

YES

YES

YES

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,15

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F800DT70N1 by STMicroelectronics

M29F800DT70N1

STMicroelectronics

M29F800DT70N1 from STMicroelectronics is a 5V NOR flash memory with a density of 8Mbit and an access time of 70ns. It features a compact SOIC package, operates asynchronously, and supports data polling. Ideal for embedded applications requiring reliable storage.

70 ns

TOP BOOT BLOCK

8

TOP

YES

YES

YES

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,15

48

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

AT29C040A-90JI by Atmel

AT29C040A-90JI

Atmel

Atmel's AT29C040A-90JI is a 512Kx8 NOR flash memory chip with 2K sectors, operating at 5V. It features asynchronous mode, 90ns access time, and supports parallel programming. Ideal for industrial applications requiring fast data polling and toggle bit functionality in a compact chip carrier package.

90 ns

BOTTOM/TOP

NO

YES

R-PQCC-J32

e0

13.97 mm

4194304 bit

FLASH

8

2

1

2K

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

256

PARALLEL

225

5

5

Not Qualified

3.556 mm

256

.0003 Amp

Flash Memories

40 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

10 ms

M58LW032D110N6 by STMicroelectronics

M58LW032D110N6

STMicroelectronics

M58LW032D110N6 from STMicroelectronics is a 32Mbit NOR Flash memory with a 3V supply, featuring asynchronous operation and a max access time of 110 ns. It operates in extreme temperatures (-40 °C to 85 °C) and supports dual terminal positioning. Ideal for industrial applications requiring reliable data storage.

110 ns

8

YES

YES

NO

R-PDSO-G56

e0

18.4 mm

33554432 bit

FLASH

16

1

32

56

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4/8

PARALLEL

NOT SPECIFIED

3/3.3

3

Not Qualified

YES

1.2 mm

128K

.00004 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NO

NOR TYPE

14 mm