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PC48F4400P0TB0EE

Micron Technology

PC48F4400P0TB0EE by Micron Technology

Micron Technology's PC48F4400P0TB0EE is a 32MX16 Flash Memory with 536Mbit density. Operating at 3V, it offers synchronous mode and 95ns access time. Ideal for industrial applications, this memory has a temperature range of -40 to 85°C and features parallel interface with 1mm terminal pitch.

Median Price

$12.257

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$12.257

100+ parts

-

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150

$12.257

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Sensible Micro Corp

USA . 5,195 parts In-Stock

1+ parts

-

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5,195

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Vyrian

USA . 2,871 parts In-Stock

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2,871

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Chip Stock

USA . 2,860 parts In-Stock

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-

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2,860

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Digiode

USA . 2,014 parts In-Stock

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2,014

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Cyclops Electronics Ltd

UK . 93 parts In-Stock

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93

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 4,227 parts In-Stock

1+ parts

$1.557

100+ parts

-

1k+ parts

$1.495

10k+ parts

$1.495

4,227

$1.557

-

$1.495

$1.495

Ampacity Inc.

Singapore . 1,071 parts In-Stock

1+ parts

$4.000

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-

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1,071

$4.000

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Continental Prestige Electronics

USA . 3,423 parts In-Stock

1+ parts

$12.257

100+ parts

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10k+ parts

$12.012

3,423

$12.257

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$12.012

Netroflash

USA . 100 parts In-Stock

1+ parts

$12.257

100+ parts

-

1k+ parts

$11.644

10k+ parts

$11.399

100

$12.257

-

$11.644

$11.399

Component Stockers USA

USA . 1,939 parts In-Stock

1+ parts

$17.160

100+ parts

$16.300

1k+ parts

$15.790

10k+ parts

-

1,939

$17.160

$16.300

$15.790

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AZTECH Wire

Italy . 319 parts In-Stock

1+ parts

$19.854

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319

$19.854

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QUARKTWIN TECHNOLOGY LTD

USA . 11,313 parts In-Stock

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11,313

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A-Z Elektronik GmbH

Germany . 8,875 parts In-Stock

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8,875

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Perfect Parts

USA . 3,257 parts In-Stock

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3,257

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Microchip USA

USA . 2,158 parts In-Stock

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2,158

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Argo Parts USA

USA . 1,914 parts In-Stock

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1,914

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RC Electronics

USA . 1,278 parts In-Stock

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1,278

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Kepictronics

USA . 350 parts In-Stock

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350

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Corphita

USA . 136 parts In-Stock

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136

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Authorized Procurement Solutions

USA . 70 parts In-Stock

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70

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Overview

Unlock the power of reliable and high-performing technology with Micron Technology's PC48F4400P0TB0EE Flash Memory. Designed with top-notch quality and cutting-edge features, this product is perfect for a wide range of applications. From industrial to consumer electronics, this memory device offers unrivaled performance and durability. Experience seamless operation and fast data access with Micron Technology's innovative flash memory solution. Upgrade your devices today and enjoy the benefits of superior technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/Epoxy material provides durability and protection to the flash memory, making it a reliable choice for long-term use.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfer rates and more efficient communication with other devices, enhancing overall performance.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal voltage of 3V ensures compatibility with a wide range of devices and power sources.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this flash memory can withstand harsh environmental conditions without compromising performance.

Technology: CMOS

CMOS technology offers low power consumption, which is beneficial for prolonging battery life in portable devices.

Technical Specifications

Flash Memory PC48F4400P0TB0EE attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

95 ns

Additional Features:

BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE

Boot Block:

BOTTOM

JESD-30 Code:

R-PBGA-B64

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

64

No. of Words:

33554432 words

No. of Words Code:

32M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

3

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10 mm

Trade Compliance

PC48F4400P0TB0EE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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