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PC48F4400P0VB0EF

Micron Technology

PC48F4400P0VB0EF by Micron Technology

Micron Technology's PC48F4400P0VB0EF is a NOR type Flash Memory with 32MX16 organization, operating at 1.8V. It features a package style of GRID ARRAY, THIN PROFILE and offers 16K/64K sector sizes. Ideal for industrial applications requiring fast access times and high memory density.

Median Price

-

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Edge Electronics

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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2,000

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Distributors (In-Stock)

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North Shore Components

USA . 99,560 parts In-Stock

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-

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99,560

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Chip Stock

USA . 18,500 parts In-Stock

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18,500

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Vyrian

USA . 6,144 parts In-Stock

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6,144

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Cyclops Electronics Ltd

UK . 6,000 parts In-Stock

1+ parts

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6,000

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Dynamic Solutions

Germany . 4,000 parts In-Stock

1+ parts

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4,000

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Digiode

USA . 906 parts In-Stock

1+ parts

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906

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Bristol Electronics

USA . 607 parts In-Stock

1+ parts

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607

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Nova Conductors

Japan . 600 parts In-Stock

1+ parts

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600

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Sea View Technologies

USA . 450 parts In-Stock

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450

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 166 parts In-Stock

1+ parts

$10.790

100+ parts

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166

$10.790

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Andel Nordic

Denmark . 1,374 parts In-Stock

1+ parts

$10.863

100+ parts

-

1k+ parts

$10.429

10k+ parts

$10.429

1,374

$10.863

-

$10.429

$10.429

Ampacity Inc.

Singapore . 1,564 parts In-Stock

1+ parts

$14.000

100+ parts

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1,564

$14.000

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Component Stockers USA

USA . 6,529 parts In-Stock

1+ parts

$14.430

100+ parts

$13.700

1k+ parts

$13.270

10k+ parts

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6,529

$14.430

$13.700

$13.270

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A-Z Elektronik GmbH

Germany . 11,121 parts In-Stock

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11,121

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Continental Prestige Electronics

USA . 4,418 parts In-Stock

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4,418

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Argo Parts USA

USA . 4,286 parts In-Stock

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4,286

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Kepictronics

USA . 4,000 parts In-Stock

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4,000

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Perfect Parts

USA . 3,416 parts In-Stock

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3,416

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Aranea Global

USA . 2,000 parts In-Stock

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2,000

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Epart123

USA . 2,000 parts In-Stock

1+ parts

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$6.730

10k+ parts

$6.730

2,000

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$6.730

$6.730

Corphita

USA . 329 parts In-Stock

1+ parts

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329

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Overview

Experience seamless and reliable performance with the PC48F4400P0VB0EF by Micron Technology, a leading manufacturer in Flash Memory technology. This versatile product offers exceptional value and benefits for a wide range of applications. From industrial to consumer electronics, this high-quality memory device provides fast access times and low power consumption. Trust Micron Technology to deliver cutting-edge solutions that exceed your expectations. Elevate your projects with the PC48F4400P0VB0EF and unleash the full potential of your devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material ensures durability and protection for the flash memory chip, making it a reliable choice for long-term use.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfer and more efficient performance, making this flash memory ideal for high-speed applications.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this flash memory chip can withstand elevated temperatures and harsh environmental conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this flash memory a power-efficient and reliable choice.

Memory IC Type: FLASH

Being a Flash memory type, this chip provides non-volatile storage, allowing data to be retained even when the power is turned off.

Technical Specifications

Flash Memory PC48F4400P0VB0EF attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

17 ns

Additional Features:

IT ALSO HAVE ASYNCHRONOUS OPERATING MODE

Boot Block:

BOTTOM/TOP

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B64

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

8, 510

No. of Terminals:

64

No. of Words:

33554432 words

No. of Words Code:

32M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA64,8X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8,1.8/3.3

Programming Voltage (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K,64K

Maximum Standby Current:

.00042 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

31 mA

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

NO

Type:

NOR TYPE

Width:

10 mm

Trade Compliance

PC48F4400P0VB0EF Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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