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RECTANGULAR Flash Memory 1,448

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
MT29F16G08ABCBBH1-12IT:B by Micron Technology

MT29F16G08ABCBBH1-12IT:B

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: VBGA; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;

20 ns

YES

NO

R-PBGA-B100

e1

18 mm

17179869184 bit

FLASH

8

1

4K

100

2147483648 words

2G

SYNCHRONOUS

85 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

VBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

4K

PARALLEL

1.8,3/3.3

2.7

Not Qualified

YES

1 mm

512K

.00005 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

12 mm

MT29F32G08AECBBH1-12:B by Micron Technology

MT29F32G08AECBBH1-12:B

Micron Technology

Micron Technology's MT29F32G08AECBBH1-12:B is a 3.3V SLC NAND Flash Memory with 4GX8 organization, 34359738368-bit memory density, and operates in commercial temperature grade. It features a parallel interface, 100 terminals in a grid array package style measuring 12mm x 18mm x 1mm. Ideal for applications requiring high-speed synchronous operation and reliable data storage.

R-PBGA-B100

e1

18 mm

34359738368 bit

FLASH

8

1

100

4294967296 words

4G

SYNCHRONOUS

70 Cel

0 Cel

4GX8

PLASTIC/EPOXY

VBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

260

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

SLC NAND TYPE

12 mm

MT29F32G08AECBBH1-12IT:B by Micron Technology

MT29F32G08AECBBH1-12IT:B

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: VBGA; Package Shape: RECTANGULAR; Programming Voltage (V): 2.7;

R-PBGA-B100

e1

18 mm

34359738368 bit

FLASH

8

3

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

VBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

260

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

SLC NAND TYPE

12 mm

MT29F32G08AFABAWP:B by Micron Technology

MT29F32G08AFABAWP:B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Memory Density: 34359738368 bit;

20 ns

YES

NO

R-PDSO-G48

e3

18.4 mm

34359738368 bit

FLASH

8

1

8K

48

4294967296 words

4G

ASYNCHRONOUS

70 Cel

0 Cel

4GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4K

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

512K

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

MT29F32G08AFABAWP-IT:B by Micron Technology

MT29F32G08AFABAWP-IT:B

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Terminal Form: GULL WING;

R-PDSO-G48

e3

18.4 mm

34359738368 bit

FLASH

8

1

48

4294967296 words

4G

ASYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

SLC NAND TYPE

12 mm

MT29F64G08AJABAWP:B by Micron Technology

MT29F64G08AJABAWP:B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel;

20 ns

YES

NO

R-PDSO-G48

e3

18.4 mm

68719476736 bit

FLASH

8

1

16K

48

8589934592 words

8G

ASYNCHRONOUS

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4K

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

512K

.00005 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NO

SLC NAND TYPE

12 mm

MT29F64G08AKABAC5:B by Micron Technology

MT29F64G08AKABAC5:B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 52; Package Code: VFLGA; Package Shape: RECTANGULAR; Type: SLC NAND TYPE;

R-PBGA-B52

18 mm

68719476736 bit

FLASH

8

1

52

8589934592 words

8G

ASYNCHRONOUS

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

VFLGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

BUTT

BOTTOM

30

SLC NAND TYPE

14 mm

MT29F64G08AKABAC5-IT:B by Micron Technology

MT29F64G08AKABAC5-IT:B

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 52; Package Code: VFLGA; Package Shape: RECTANGULAR; Terminal Form: BUTT;

R-PBGA-B52

18 mm

68719476736 bit

FLASH

8

1

52

8589934592 words

8G

ASYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

VFLGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BUTT

BOTTOM

30

SLC NAND TYPE

14 mm

MT29F64G08AKCBBH2-12:B by Micron Technology

MT29F64G08AKCBBH2-12:B

Micron Technology

MT29F64G08AKCBBH2-12:B by Micron Technology is a 3.3V SLC NAND flash memory with 8GX8 organization, operating at 0-70 °C. It features a thin profile grid array package, 100 terminals, and parallel interface. Ideal for commercial applications requiring high-speed synchronous operation and reliable data storage in compact devices.

R-PBGA-B100

e1

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

SLC NAND TYPE

12 mm

MT29F64G08AKCBBH2-12IT:B by Micron Technology

MT29F64G08AKCBBH2-12IT:B

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: TBGA; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;

R-PBGA-B100

e1

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

SLC NAND TYPE

12 mm

MT29F64G08AMABAC5-IT:B by Micron Technology

MT29F64G08AMABAC5-IT:B

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 52; Package Code: VFLGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B52;

R-PBGA-B52

18 mm

68719476736 bit

FLASH

8

1

52

8589934592 words

8G

ASYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

VFLGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BUTT

BOTTOM

30

SLC NAND TYPE

14 mm

MT29F64G08AMCBBH2-12:B by Micron Technology

MT29F64G08AMCBBH2-12:B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Words: 8589934592 words;

R-PBGA-B100

e1

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

SLC NAND TYPE

12 mm

MT29F64G08AMCBBH2-12IT:B by Micron Technology

MT29F64G08AMCBBH2-12IT:B

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: TBGA; Package Shape: RECTANGULAR; Organization: 8GX8;

R-PBGA-B100

e1

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

SLC NAND TYPE

12 mm

MT29F64G08AJABAWP-IT:B by Micron Technology

MT29F64G08AJABAWP-IT:B

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

20 ns

YES

NO

R-PDSO-G48

e3

18.4 mm

68719476736 bit

FLASH

8

1

16K

48

8589934592 words

8G

ASYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4K

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

512K

.00005 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

30

NO

SLC NAND TYPE

12 mm

MT29F16G08ABACAWP-ITZ:C by Micron Technology

MT29F16G08ABACAWP-ITZ:C

Micron Technology

MT29F16G08ABACAWP-ITZ:C by Micron Technology is a 3.3V SLC NAND Flash Memory with 2GX8 organization, operating from -40 to 85 °C. It has a memory density of 17179869184 bit and is suitable for industrial applications requiring reliable, high-speed data storage in compact devices.

R-PDSO-G48

e3

18.4 mm

17179869184 bit

FLASH

8

1

48

2147483648 words

2G

ASYNCHRONOUS

85 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

30

SLC NAND TYPE

12 mm

SST38VF6401B-70I/TV by Microchip Technology

SST38VF6401B-70I/TV

Microchip Technology

SST38VF6401B-70I/TV by Microchip: 4MX16 Flash Memory with 128 Sectors, 3V Operating Voltage. Ideal for industrial applications, offers 100000 Write/Erase Cycles and fast access time of 70ns. Supports NOR type interface with 4194304 words capacity in a small outline package.

70 ns

BOTTOM

YES

YES

YES

100

100000 Write/Erase Cycles

R-PDSO-G48

e3

18.4 mm

67108864 bit

FLASH

16

1

1

128

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

PARALLEL

3/3.3

3

Not Qualified

YES

TS 16949

1.2 mm

32K

.00004 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

MT29F2G08ABBEAHC:ETR by Micron Technology

MT29F2G08ABBEAHC:ETR

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

R-PBGA-B63

e1

13 mm

2147483648 bit

FLASH

8

1

63

268435456 words

256M

ASYNCHRONOUS

70 Cel

0 Cel

256MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

10.5 mm

MTFC16GJVEC-4MIT by Micron Technology

MTFC16GJVEC-4MIT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 169; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

R-PBGA-B169

e1

18 mm

FLASH CARD

1

169

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

3.3

.8 mm

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

14 mm

RC28F128P33TF60A by Micron Technology

RC28F128P33TF60A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TFBGA; Package Shape: RECTANGULAR; Memory Width: 16;

60 ns

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

TOP

YES

YES

NO

R-PBGA-B64

e0

10 mm

134217728 bit

FLASH

16

1

4,127

64

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TFBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8

PARALLEL

245

2.5/3,3

3

Not Qualified

1.2 mm

16K,64K

.002 Amp

Flash Memories

28 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

30

NO

NOR TYPE

8 mm

PC28F128P33TF60A by Micron Technology

PC28F128P33TF60A

Micron Technology

Micron Technology's PC28F128P33TF60A is a 3V NOR flash memory with 8Mx16 organization, operating from -40 to 85°C. It features a page size of 8 words, sector sizes of 16K and 64K words, and a memory density of 134217728 bits. Ideal for industrial applications requiring fast access times and low standby current.

60 ns

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

TOP

YES

YES

NO

R-PBGA-B64

e1

10 mm

134217728 bit

FLASH

16

1

4,127

64

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

8

PARALLEL

260

2.5/3,3

3

Not Qualified

1.2 mm

16K,64K

.002 Amp

Flash Memories

28 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

8 mm

MTFDDAK240MAV-1AE12ABYY by Micron Technology

MTFDDAK240MAV-1AE12ABYY

Micron Technology

FLASH MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 22; Package Code: SMA; Package Shape: RECTANGULAR; Parallel or Serial: SERIAL;

R-XSMA-N22

100.45 mm

2061584302080 bit

FLASH MODULE

8

1

22

257698037760 words

240G

ASYNCHRONOUS

70 Cel

0 Cel

240GX8

3-STATE

UNSPECIFIED

SMA

RECTANGULAR

MICROELECTRONIC ASSEMBLY

SERIAL

5

7 mm

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

NO LEAD

SINGLE

MLC NAND TYPE

69.85 mm

MT29F1G08ABCHC:C by Micron Technology

MT29F1G08ABCHC:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.65 V;

R-PBGA-B63

e1

13 mm

1073741824 bit

FLASH

8

1

63

134217728 words

128M

ASYNCHRONOUS

70 Cel

0 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.65 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

10.5 mm

MT29F1G08ABCHCET:C by Micron Technology

MT29F1G08ABCHCET:C

Micron Technology

Micron Technology's MT29F1G08ABCHCET:C is a 128MX8 SLC NAND flash memory with 1073741824 bit density. Operating at 1.8V, it offers industrial-grade temperature range of -40 to 85 °C. With parallel interface and very thin profile, it suits applications requiring high-speed data storage in compact devices.

R-PBGA-B63

e1

13 mm

1073741824 bit

FLASH

8

1

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

SLC NAND TYPE

10.5 mm

MT29F1G16ABCHC:C by Micron Technology

MT29F1G16ABCHC:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.8;

R-PBGA-B63

e1

13 mm

1073741824 bit

FLASH

16

1

63

67108864 words

64M

ASYNCHRONOUS

70 Cel

0 Cel

64MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.65 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

10.5 mm

MT29F1G16ABCHCET:C by Micron Technology

MT29F1G16ABCHCET:C

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Type: SLC NAND TYPE;

R-PBGA-B63

e1

13 mm

1073741824 bit

FLASH

16

1

63

67108864 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

10.5 mm

MT29F2G08ABAEAWP-ITX:E by Micron Technology

MT29F2G08ABAEAWP-ITX:E

Micron Technology

Micron Technology's MT29F2G08ABAEAWP-ITX:E is a 256MX8 SLC NAND flash memory with 2147483648 bit density. Operating at 3.3V, it has an industrial temperature grade of -40 to 85 °C. Suitable for parallel applications due to its CMOS technology and 0.5mm terminal pitch.

R-PDSO-G48

e3

18.4 mm

2147483648 bit

FLASH

8

1

48

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

SLC NAND TYPE

12 mm

MT28GU01GAAA1EGC-0SIT by Micron Technology

MT28GU01GAAA1EGC-0SIT

Micron Technology

MT28GU01GAAA1EGC-0SIT by Micron Technology is a 64MX16 Flash Memory with 1073741824 bit memory density. Operating at 1.8V, it offers a max access time of 96ns in industrial temperature grade applications. Featuring synchronous operation and parallel interface, this thin profile GRID ARRAY package is suitable for various high-performance embedded systems.

96 ns

R-PBGA-B64

e1

10 mm

1073741824 bit

FLASH

16

1

64

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

1.8

AEC-Q100

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

8 mm

MT28GU01GAAA2EGC-0SIT by Micron Technology

MT28GU01GAAA2EGC-0SIT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.7 V;

96 ns

R-PBGA-B64

e1

10 mm

1073741824 bit

FLASH

16

1

64

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

1.8

AEC-Q100

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

8 mm

MT28GU256AAA1EGC-0SIT by Micron Technology

MT28GU256AAA1EGC-0SIT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Width: 8 mm;

96 ns

R-PBGA-B64

e1

10 mm

268435456 bit

FLASH

16

1

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

1.8

AEC-Q100

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

8 mm

MT28GU256AAA2EGC-0SIT by Micron Technology

MT28GU256AAA2EGC-0SIT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B64;

96 ns

R-PBGA-B64

e1

10 mm

268435456 bit

FLASH

16

1

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

1.8

AEC-Q100

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

8 mm

MT28GU512AAA2EGC-0SIT by Micron Technology

MT28GU512AAA2EGC-0SIT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B64;

96 ns

R-PBGA-B64

e1

10 mm

536870912 bit

FLASH

16

1

64

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

1.8

AEC-Q100

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

8 mm

JS28F00AP33EFA by Micron Technology

JS28F00AP33EFA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

105 ns

IT ALSO OPERATES IN ASYNCHRONOUS MODE

R-PDSO-G56

e3

18.4 mm

1073741824 bit

FLASH

16

1

56

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

14 mm

JS28F00AP33TFA by Micron Technology

JS28F00AP33TFA

Micron Technology

Micron Technology's JS28F00AP33TFA is a 64MX16 Flash Memory with 1073741824 bit memory density. Operating at 3V, it has a max access time of 105ns and supports industrial temperature grade. Ideal for applications requiring high-speed data storage in compact devices.

105 ns

TOP BOOT; IT ALSO OPERATES IN ASYNCHRONOUS MODE

TOP

R-PDSO-G56

e3

18.4 mm

1073741824 bit

FLASH

16

1

56

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

14 mm

JS28F512P33BFD by Micron Technology

JS28F512P33BFD

Micron Technology

Micron Technology's JS28F512P33BFD is a 32MX16 flash memory with 536MB density. Operating at 3V, it offers fast access time of 105ns in industrial temperatures. With parallel interface and bottom boot block, it suits applications requiring high-speed data storage.

105 ns

BOTTOM BOOT; IT ALSO OPERATES IN ASYNCHRONOUS MODE

BOTTOM

R-PDSO-G56

e3

18.4 mm

536870912 bit

FLASH

16

1

56

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

14 mm

JS28F512P33EFA by Micron Technology

JS28F512P33EFA

Micron Technology

JS28F512P33EFA by Micron Technology is a NOR flash memory with 32MX16 organization, 536MB density, and 105ns access time. It operates at 3V, has a temperature range of -40 to 85°C, and is suitable for industrial applications requiring high-speed parallel memory access.

105 ns

IT ALSO OPERATES IN ASYNCHRONOUS MODE

R-PDSO-G56

e3

18.4 mm

536870912 bit

FLASH

16

1

56

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

3

1.2 mm

31 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NOR TYPE

14 mm

JS28F512P33TFA by Micron Technology

JS28F512P33TFA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Boot Block: TOP;

105 ns

TOP BOOT; IT ALSO OPERATES IN ASYNCHRONOUS MODE

TOP

R-PDSO-G56

e3

18.4 mm

536870912 bit

FLASH

16

1

56

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

14 mm

PC28F00AP33EFA by Micron Technology

PC28F00AP33EFA

Micron Technology

Micron Technology's PC28F00AP33EFA is a 64MX16 Flash Memory with 67108864 words. Operating at 3V, it offers fast access time of 95ns in industrial temperatures. Its parallel interface and thin profile make it ideal for high-speed data storage applications.

95 ns

IT ALSO OPERATES IN ASYNCHRONOUS MODE

R-PBGA-B64

e1

10 mm

1073741824 bit

FLASH

16

1

64

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

8 mm

PC28F00BP33EFA by Micron Technology

PC28F00BP33EFA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

100 ns

IT ALSO OPERATES IN ASYNCHRONOUS MODE

R-PBGA-B64

e1

10 mm

2147483648 bit

FLASH

16

1

64

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

8 mm

PC28F512P33BFD by Micron Technology

PC28F512P33BFD

Micron Technology

Micron Technology's PC28F512P33BFD is a 32MX16 flash memory with 33554432 words. It operates at 3V, has a memory width of 16 bits, and offers fast access time of 95 ns. Ideal for industrial applications requiring high-density memory in a compact GRID ARRAY package.

95 ns

BOTTOM BOOT; IT ALSO OPERATES IN ASYNCHRONOUS MODE

BOTTOM

R-PBGA-B64

e1

10 mm

536870912 bit

FLASH

16

1

64

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

8 mm

PC28F512P33EFA by Micron Technology

PC28F512P33EFA

Micron Technology

Micron Technology's PC28F512P33EFA is a 32MX16 Flash Memory with 33554432 words. Operating at 3V, it offers a memory density of 536870912 bits and operates in industrial temperature grade. With a parallel interface and synchronous mode, it is ideal for applications requiring high-speed data storage and retrieval.

95 ns

IT ALSO OPERATES IN ASYNCHRONOUS MODE

R-PBGA-B64

e1

10 mm

536870912 bit

FLASH

16

1

64

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

8 mm

PC28F512P33TFA by Micron Technology

PC28F512P33TFA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Surface Mount: YES;

95 ns

TOP BOOT; IT ALSO OPERATES IN ASYNCHRONOUS MODE

TOP

R-PBGA-B64

e1

10 mm

536870912 bit

FLASH

16

1

64

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

8 mm

SST26VF064BA-104I/MF by Microchip Technology

SST26VF064BA-104I/MF

Microchip Technology

SST26VF064BA-104I/MF by Microchip is a 64M NOR flash memory with SPI serial bus, 104 MHz clock frequency, and 100000 write/erase cycles. It operates at -40 to 85 °C for industrial applications requiring reliable non-volatile memory storage in a compact package.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-N8

e3

6 mm

67108864 bit

FLASH

1

1

1

8

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX1

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

3

.8 mm

SPI

.000045 Amp

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

1.27 mm

DUAL

NOR TYPE

5 mm

HARDWARE/SOFTWARE

SST26WF016B-104I/MF by Microchip Technology

SST26WF016B-104I/MF

Microchip Technology

SST26WF016B-104I/MF by Microchip: 16MX1 NOR Flash Memory, 104 MHz clock freq., SPI serial bus. Ideal for industrial applications with -40 to 85 °C temp range, offering 100000 Write/Erase cycles and 16777216 bit memory density.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-N8

e3

6 mm

16777216 bit

FLASH

1

1

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

1.8

TS 16949

.8 mm

SPI

.000005 Amp

25 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

1.27 mm

DUAL

NOR TYPE

5 mm

HARDWARE/SOFTWARE

SST26WF016B-104I/SN by Microchip Technology

SST26WF016B-104I/SN

Microchip Technology

SST26WF016B-104I/SN by Microchip: 16MX1 organization, 104 MHz clock frequency, SPI serial bus type. Ideal for industrial applications requiring NOR flash memory with 100000 write/erase cycles endurance and 1.8V programming voltage.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

16777216 bit

FLASH

1

3

1

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8

TS 16949

1.75 mm

SPI

.000005 Amp

25 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

40

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

SST26WF016BA-104I/MF by Microchip Technology

SST26WF016BA-104I/MF

Microchip Technology

SST26WF016BA-104I/MF by Microchip: 16MX1 NOR Flash Memory, 104 MHz clock freq., SPI serial bus. Ideal for industrial applications requiring 100K write/erase cycles, operating b/w -40 to 85 °C with a supply voltage range of 1.65V to 1.95V.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-N8

e3

6 mm

16777216 bit

FLASH

1

1

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

1.8

TS 16949

.8 mm

SPI

.000005 Amp

25 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

1.27 mm

DUAL

NOR TYPE

5 mm

HARDWARE/SOFTWARE

SST26WF016BA-104I/SN by Microchip Technology

SST26WF016BA-104I/SN

Microchip Technology

SST26WF016BA-104I/SN by Microchip: 16MX1 NOR Flash Memory, 104 MHz clock frequency, SPI serial bus type. Ideal for industrial applications requiring high endurance and 100000 write/erase cycles.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

16777216 bit

FLASH

1

3

1

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8

TS 16949

1.75 mm

SPI

.000005 Amp

25 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

40

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

SST26WF016BAT-104I/MF by Microchip Technology

SST26WF016BAT-104I/MF

Microchip Technology

SST26WF016BAT-104I/MF by Microchip: 16MX1 NOR Flash Memory, 104 MHz clock freq., SPI serial bus. Ideal for industrial applications requiring high endurance, with 100K write/erase cycles and operating temp range of -40 to 85°C.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-N8

e3

6 mm

16777216 bit

FLASH

1

1

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

1.8

TS 16949

.8 mm

SPI

.000005 Amp

25 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

1.27 mm

DUAL

NOR TYPE

5 mm

HARDWARE/SOFTWARE

SST26WF016BAT-104I/SN by Microchip Technology

SST26WF016BAT-104I/SN

Microchip Technology

SST26WF016BAT-104I/SN by Microchip: 16MX1 NOR Flash Memory, 104 MHz clock frequency, SPI serial bus type. Ideal for industrial applications requiring high endurance with 100K write/erase cycles and operating temperature range of -40 to 85°C.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

16777216 bit

FLASH

1

3

1

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8

TS 16949

1.75 mm

SPI

.000005 Amp

25 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

40

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE