Loading...

RECTANGULAR Flash Memory 1,448

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
MT29F2G01ABAGD12-IT:G by Micron Technology

MT29F2G01ABAGD12-IT:G

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Surface Mount: YES; Maximum Clock Frequency (fCLK): 133 MHz;

133 MHz

10

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3.3

1.2 mm

SPI

.00005 Amp

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

BALL

1 mm

BOTTOM

SLC NAND TYPE

6 mm

HARDWARE/SOFTWARE

MTFC4GMXEA-WT by Micron Technology

MTFC4GMXEA-WT

Micron Technology

MTFC4GMXEA-WT by Micron Technology is a 4GX8 NAND flash memory with 34359738368 bit density. Operating at 52 MHz, it has a low profile of 0.8 mm and supports hardware write protection. Ideal for embedded MMC applications, this synchronous memory features a very thin grid array package with 153 terminals.

52 MHz

R-PBGA-B153

13 mm

34359738368 bit

Embedded MMC

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-25 Cel

4GX8

OPEN-DRAIN

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

.8 mm

80 mA

1.95 V

1.65 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

HARDWARE

MTFC32GLXDM-WT by Micron Technology

MTFC32GLXDM-WT

Micron Technology

MTFC32GLXDM-WT by Micron Technology is a 32GX8 NAND flash memory with 34359738368 words capacity. Operating at 52 MHz, it has a thin profile and fine pitch package style suitable for embedded MMC applications. With a voltage range of 1.65V to 1.95V, this CMOS technology chip offers hardware write protection and open-drain output characteristics.

52 MHz

R-PBGA-B153

13 mm

274877906944 bit

Embedded MMC

8

1

153

34359738368 words

32G

SYNCHRONOUS

85 Cel

-25 Cel

32GX8

OPEN-DRAIN

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

1.2 mm

80 mA

1.95 V

1.65 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

HARDWARE

MTFC8GLXEA-WT by Micron Technology

MTFC8GLXEA-WT

Micron Technology

MTFC8GLXEA-WT by Micron Technology is a NAND flash memory with 8GX8 organization, 52 MHz clock frequency, and 1.8V programming voltage. It is used in embedded MMC applications due to its 68719476736 bit memory density and synchronous operation mode.

52 MHz

R-PBGA-B153

13 mm

68719476736 bit

Embedded MMC

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-25 Cel

8GX8

OPEN-DRAIN

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

.8 mm

80 mA

1.95 V

1.65 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

HARDWARE

MTFC2GMXEA-WT by Micron Technology

MTFC2GMXEA-WT

Micron Technology

MTFC2GMXEA-WT by Micron Technology is a NAND flash memory with 2GX8 organization, operating at 52 MHz clock frequency. It features a very thin profile package style and offers 17179869184 bit memory density. Ideal for applications requiring high-speed data storage in compact devices.

52 MHz

R-PBGA-B153

13 mm

17179869184 bit

Embedded MMC

8

1

153

2147483648 words

2G

SYNCHRONOUS

85 Cel

-25 Cel

2GX8

OPEN-DRAIN

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

.8 mm

70 mA

1.95 V

1.65 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

HARDWARE

MTFC16GLXDV-WT by Micron Technology

MTFC16GLXDV-WT

Micron Technology

Embedded MMC; No. of Terminals: 169; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Density: 137438953472 bit; Maximum Supply Current: 80 mA;

52 MHz

R-PBGA-B169

16 mm

137438953472 bit

Embedded MMC

8

1

169

17179869184 words

16G

SYNCHRONOUS

85 Cel

-25 Cel

16GX8

OPEN-DRAIN

PLASTIC/EPOXY

VFBGA

BGA169,14X28,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

1 mm

80 mA

1.95 V

1.65 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

12 mm

HARDWARE

GD25Q16CNIGR by Gigadevice Semiconductor

GD25Q16CNIGR

Gigadevice Semiconductor

GD25Q16CNIGR by Gigadevice Semiconductor is a 2MX8 NOR Flash Memory with 120 MHz clock frequency, SPI serial bus type. Operating at -40 to 85 °C, it has 100000 write/erase cycles endurance. Ideal for applications requiring fast data access and reliable storage in compact devices.

120 MHz

20

100000 Write/Erase Cycles

R-XDSO-N8

4 mm

16777216 bit

FLASH

8

1

8

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX8

HVSON

SOLCC8,.12,32

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

3.3

.6 mm

SPI

.000005 Amp

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

NO LEAD

.8 mm

DUAL

NOR TYPE

3 mm

HARDWARE/SOFTWARE

GD25Q16CWIGR by Gigadevice Semiconductor

GD25Q16CWIGR

Gigadevice Semiconductor

GD25Q16CWIGR by Gigadevice Semiconductor is a 2MX8 NOR flash memory with 120 MHz clock frequency, SPI serial bus type. It operates at -40 to 85 °C and has 100000 write/erase cycles endurance. Ideal for applications requiring high-speed data storage in compact devices.

120 MHz

20

100000 Write/Erase Cycles

R-XDSO-N8

6 mm

16777216 bit

FLASH

8

1

8

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX8

HVSON

SOLCC8,.2

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

3.3

.8 mm

SPI

.000005 Amp

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

NO LEAD

1.27 mm

DUAL

NOR TYPE

5 mm

HARDWARE/SOFTWARE