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MTFC2GMXEA-WT

Micron Technology

MTFC2GMXEA-WT by Micron Technology

MTFC2GMXEA-WT by Micron Technology is a NAND flash memory with 2GX8 organization, operating at 52 MHz clock frequency. It features a very thin profile package style and offers 17179869184 bit memory density. Ideal for applications requiring high-speed data storage in compact devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 19,500 parts In-Stock

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19,500

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Vyrian

USA . 3,487 parts In-Stock

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3,487

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Digiode

USA . 2,494 parts In-Stock

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2,494

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Netsource Technology, Inc.

USA . 897 parts In-Stock

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897

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Nova Conductors

Japan . 300 parts In-Stock

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300

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 751 parts In-Stock

1+ parts

$5.806

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751

$5.806

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Ampacity Inc.

Singapore . 720 parts In-Stock

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$29.000

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720

$29.000

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Continental Prestige Electronics

USA . 4,945 parts In-Stock

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4,945

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Argo Parts USA

USA . 4,024 parts In-Stock

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4,024

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Kepictronics

USA . 3,000 parts In-Stock

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3,000

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Microchip USA

USA . 465 parts In-Stock

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465

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Corphita

USA . 114 parts In-Stock

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114

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Bastille Electronics

Australia . 92 parts In-Stock

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92

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Overview

Upgrade your devices with the MTFC2GMXEA-WT from Micron Technology, a leading manufacturer in the flash memory category. This advanced technology offers high-quality performance and reliability, perfect for various applications. Experience the value of faster data transfer speeds and increased storage capacity, all in a sleek and compact package. Trust Micron Technology to provide cutting-edge solutions that enhance your digital experience.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and reliability to the flash memory, ensuring a longer lifespan.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards, saving time and effort during production.

Nominal Supply Voltage: 1.8V

Low nominal supply voltage helps in reducing power consumption and increasing energy efficiency of the product.

Maximum Clock Frequency: 52 MHz

High clock frequency allows for fast data transfer rates, making the flash memory ideal for applications requiring quick read and write speeds.

Write Protection: HARDWARE

Hardware write protection ensures that data stored in the flash memory is secure and prevents accidental deletion or corruption of important files.

Memory Density: 17179869184 bit

High memory density enables storage of large amounts of data in a compact form factor, making the flash memory suitable for devices with limited space.

Technical Specifications

Flash Memory MTFC2GMXEA-WT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

52 MHz

JESD-30 Code:

R-PBGA-B153

Length:

13 mm

Memory Density:

17179869184 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

153

No. of Words:

2147483648 words

No. of Words Code:

2G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

2GX8

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA153,14X14,20

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Programming Voltage (V):

1.8

Maximum Seated Height:

.8 mm

Maximum Supply Current:

70 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Type:

NAND TYPE

Width:

11.5 mm

Write Protection:

HARDWARE

Trade Compliance

MTFC2GMXEA-WT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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