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MTFC8GLXEA-WT

Micron Technology

MTFC8GLXEA-WT by Micron Technology

MTFC8GLXEA-WT by Micron Technology is a NAND flash memory with 8GX8 organization, 52 MHz clock frequency, and 1.8V programming voltage. It is used in embedded MMC applications due to its 68719476736 bit memory density and synchronous operation mode.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 10,900 parts In-Stock

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Vyrian

USA . 4,433 parts In-Stock

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Digiode

USA . 843 parts In-Stock

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843

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Nova Conductors

Japan . 50 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 479 parts In-Stock

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$16.000

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479

$16.000

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AZTECH Wire

Italy . 476 parts In-Stock

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$16.113

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476

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Argo Parts USA

USA . 5,394 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,285 parts In-Stock

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Continental Prestige Electronics

USA . 4,667 parts In-Stock

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Corphita

USA . 1,569 parts In-Stock

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Kepictronics

USA . 572 parts In-Stock

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572

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Microchip USA

USA . 129 parts In-Stock

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129

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Aranea Global

USA . 50 parts In-Stock

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50

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Overview

Unlock the power of advanced technology with the MTFC8GLXEA-WT by Micron Technology. As a leader in flash memory innovation, Micron delivers unmatched quality and reliability in every product. This flash memory device offers a versatile solution for various applications, ensuring seamless performance and data storage. With a sleek design and high-speed operation, this product provides exceptional value and benefits to customers seeking top-notch memory solutions. Experience the difference with Micron Technology's cutting-edge flash memory technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable.

Surface Mount: YES

Being surface mountable allows for easy integration into PCBs, saving space and simplifying assembly.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise data transfer and timing, improving overall performance.

Nominal Supply Voltage / Vsup (V): 1.8

Low nominal supply voltage helps in reducing power consumption, making the product energy-efficient.

Terminal Position: BOTTOM

Bottom terminal position makes it convenient for soldering and connections.

Write Protection: HARDWARE

Hardware write protection adds an extra layer of security to prevent accidental data loss or corruption.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, contributing to efficient operation.

Type: NAND TYPE

NAND flash memory type provides high storage capacity and fast data transfer speeds, ideal for various applications.

Technical Specifications

Flash Memory MTFC8GLXEA-WT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

52 MHz

JESD-30 Code:

R-PBGA-B153

Length:

13 mm

Memory Density:

68719476736 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

153

No. of Words:

8589934592 words

No. of Words Code:

8G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

8GX8

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA153,14X14,20

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Programming Voltage (V):

1.8

Maximum Seated Height:

.8 mm

Maximum Supply Current:

80 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Type:

NAND TYPE

Width:

11.5 mm

Write Protection:

HARDWARE

Trade Compliance

MTFC8GLXEA-WT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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