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RECTANGULAR Flash Memory 1,448

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
SQF-SMSM4-256G-SBC by Advantech

SQF-SMSM4-256G-SBC

Advantech

Advantech SQF-SMSM4-256G-SBC Flash Memory features 256GX8 organization, MLC NAND type, and 2199023255552 bit memory density. Ideal for commercial applications requiring high-speed serial memory with a compact MICROELECTRONIC ASSEMBLY package.

R-XSMA-N52

50.8 mm

2199023255552 bit

FLASH MODULE

8

1

52

274877906944 words

256G

70 Cel

0 Cel

256GX8

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

SERIAL

4.2 mm

NO

CMOS

COMMERCIAL

NO LEAD

SINGLE

MLC NAND TYPE

30 mm

SQF-SMSM2-64G-SBC by Advantech

SQF-SMSM2-64G-SBC

Advantech

Advantech's SQF-SMSM2-64G-SBC is a 64GX8 MLC NAND flash module with 52 terminals. It operates b/w 0-70°C, measures 30x50.8 mm, and has a memory density of 549755813888 bits. Ideal for commercial applications requiring high-speed serial memory solutions.

R-XSMA-N52

50.8 mm

549755813888 bit

FLASH MODULE

8

1

52

68719476736 words

64G

70 Cel

0 Cel

64GX8

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

SERIAL

4.2 mm

NO

CMOS

COMMERCIAL

NO LEAD

SINGLE

MLC NAND TYPE

30 mm

SQF-SMSM4-256G-SBE by Advantech

SQF-SMSM4-256G-SBE

Advantech

Advantech SQF-SMSM4-256G-SBE is a 256GX8 MLC NAND flash module with 52 terminals. Operating temp: -40 to 85°C, ideal for industrial applications. Serial interface, compact size (30x50.8 mm), and high memory density of 2199023255552 bits make it suitable for embedded systems.

R-XSMA-N52

50.8 mm

2199023255552 bit

FLASH MODULE

8

1

52

274877906944 words

256G

85 Cel

-40 Cel

256GX8

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

SERIAL

4.2 mm

NO

CMOS

INDUSTRIAL

NO LEAD

SINGLE

MLC NAND TYPE

30 mm

SQF-SMSM4-512G-SBE by Advantech

SQF-SMSM4-512G-SBE

Advantech

Advantech SQF-SMSM4-512G-SBE is a 512GX8 MLC NAND flash module with 52 terminals. Operating temp: -40 to 85°C, size: 30x50.8 mm, height: 4.2 mm. Ideal for industrial applications requiring high memory density and serial interface technology.

R-XSMA-N52

50.8 mm

4398046511104 bit

FLASH MODULE

8

1

52

549755813888 words

512G

85 Cel

-40 Cel

512GX8

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

SERIAL

4.2 mm

NO

CMOS

INDUSTRIAL

NO LEAD

SINGLE

MLC NAND TYPE

30 mm

W25X05CLUXIGTR by Winbond Electronics

W25X05CLUXIGTR

Winbond Electronics

W25X05CLUXIGTR by Winbond Electronics is a NOR flash memory with 64Kx8 organization, SPI serial bus type, and 104 MHz clock frequency. It operates at -40 to 85 °C, has 100000 write/erase cycles endurance, and is ideal for applications requiring fast data transfer in compact electronic devices.

104 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

3 mm

524288 bit

FLASH

8

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

3

.6 mm

SPI

.00005 Amp

12 mA

3.6 V

2.3 V

3

YES

CMOS

NO LEAD

.5 mm

DUAL

NOR TYPE

2 mm

HARDWARE/SOFTWARE

MTFC128GASAQJP-AIT by Micron Technology

MTFC128GASAQJP-AIT

Micron Technology

FLASH CARD; No. of Terminals: 153; Package Code: VFBGA; Package Shape: RECTANGULAR; Length: 13 mm; Maximum Supply Voltage (Vsup): 3.6 V;

200 MHz

NO

NO

1

R-PBGA-B153

13 mm

1099511627776 bit

FLASH CARD

8

1

153

137438953472 words

128G

SYNCHRONOUS

85 Cel

-40 Cel

128GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

AEC-Q104

1 mm

3.6 V

2.7 V

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC128GASAQJP-AAT by Micron Technology

MTFC128GASAQJP-AAT

Micron Technology

FLASH CARD; No. of Terminals: 153; Package Code: VFBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH; Data Polling: NO;

200 MHz

NO

NO

1

R-PBGA-B153

13 mm

1099511627776 bit

FLASH CARD

8

1

153

137438953472 words

128G

SYNCHRONOUS

105 Cel

-40 Cel

128GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

AEC-Q104

1 mm

3.6 V

2.7 V

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC64GASAQHD-AAT by Micron Technology

MTFC64GASAQHD-AAT

Micron Technology

MTFC64GASAQHD-AAT by Micron Technology is a 64GX8 NAND flash memory with 549755813888 bit density. Operating at 200 MHz, it offers synchronous operation and a very thin profile package style. Ideal for automotive applications due to AEC-Q104 screening level and wide temperature range from -40°C to 105°C.

200 MHz

NO

NO

1

R-PBGA-B153

e1

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

105 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

AEC-Q104

.9 mm

3.6 V

2.7 V

YES

CMOS

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NAND TYPE

11.5 mm

MTFC32GASAQHD-AIT by Micron Technology

MTFC32GASAQHD-AIT

Micron Technology

FLASH CARD; No. of Terminals: 153; Package Code: VFBGA; Package Shape: RECTANGULAR; Screening Level: AEC-Q104; Command User Interface: NO;

200 MHz

NO

NO

1

R-PBGA-B153

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

AEC-Q104

.9 mm

3.6 V

2.7 V

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC64GASAQHD-AIT by Micron Technology

MTFC64GASAQHD-AIT

Micron Technology

Micron Technology's MTFC64GASAQHD-AIT is a 64GX8 NAND flash memory with 549755813888 bit density. Operating at up to 200 MHz, it suits applications requiring high-speed data storage. With AEC-Q104 screening and -40 to 85 °C temp range, it's ideal for automotive electronics.

200 MHz

NO

NO

1

R-PBGA-B153

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

85 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

AEC-Q104

.9 mm

3.6 V

2.7 V

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC32GASAQHD-AAT by Micron Technology

MTFC32GASAQHD-AAT

Micron Technology

Micron's MTFC32GASAQHD-AAT is a 32GX8 NAND flash memory with 34359738368 words. Operating in synchronous mode at up to 200 MHz, it offers a memory density of 274877906944 bits. Ideal for applications requiring high-speed data storage and retrieval in automotive electronics due to AEC-Q104 screening level.

200 MHz

NO

NO

1

R-PBGA-B153

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

SYNCHRONOUS

105 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

AEC-Q104

.9 mm

3.6 V

2.7 V

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC64GAZAQHD-WT by Micron Technology

MTFC64GAZAQHD-WT

Micron Technology

MTFC64GAZAQHD-WT by Micron Technology is a 64GX8 NAND flash memory with 549755813888 bit density. Operating in synchronous mode, it has a package style of GRID ARRAY, suitable for applications requiring high-speed data storage. With a very thin profile and fine pitch, it offers parallel operation at temperatures ranging from -25 to 85 °C.

1

R-PBGA-B153

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

85 Cel

-25 Cel

64GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

.9 mm

3.6 V

2.7 V

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

SFEM032GB1EA1TO-I-HG-12P-STD by Swissbit Ag

SFEM032GB1EA1TO-I-HG-12P-STD

Swissbit Ag

Swissbit Ag's SFEM032GB1EA1TO-I-HG-12P-STD is a 32GX8 SLC NAND flash memory with 20000 Write/Erase Cycles endurance. Operating at 3.3V, it offers 34359738368 words capacity and supports up to 200 MHz clock frequency. Ideal for applications requiring high-speed synchronous memory in compact form factors.

200 MHz

NO

NO

1

20000 Write/Erase Cycles

R-PBGA-B153

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

BALL

.5 mm

BOTTOM

NO

SLC NAND TYPE

11.5 mm

MT29F1G08ABBEAH4-ITX:E by Micron Technology

MT29F1G08ABBEAH4-ITX:E

Micron Technology

Micron Technology's MT29F1G08ABBEAH4-ITX:E is a 128Mx8 SLC NAND flash memory with 1.8V supply voltage, operating from -40 to 85°C. Featuring 100K write/erase cycles, it has a page size of 2K words and sector size of 128K words. Ideal for applications requiring high endurance and reliable data storage in compact devices.

NO

YES

100000 Write/Erase Cycles

R-PBGA-B63

11 mm

1073741824 bit

FLASH

8

1

1K

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

3-STATE

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

1.8

YES

1 mm

128K

.00005 Amp

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.8 mm

BOTTOM

YES

SLC NAND TYPE

9 mm

S29GL256S10GHB010 by Infineon Technologies

S29GL256S10GHB010

Infineon Technologies

FLASH; No. of Terminals: 56; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Density: 268435456 bit; Parallel or Serial: PARALLEL;

100 ns

20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES

1

YES

YES

YES

2

100000 Write/Erase Cycles

R-PBGA-B56

9 mm

268435456 bit

FLASH

8

3

1

256

56

33554432 words

32M

ASYNCHRONOUS

105 Cel

-40 Cel

32MX8

3-STATE

PLASTIC/EPOXY

VFBGA

BGA56,8X8,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

32

PARALLEL

3

YES

AEC-Q100; TS 16949

1 mm

128K

.0002 Amp

100 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

.8 mm

BOTTOM

YES

NAND TYPE

7 mm

S29GL128S10GHB010 by Infineon Technologies

S29GL128S10GHB010

Infineon Technologies

FLASH; No. of Terminals: 56; Package Code: VFBGA; Package Shape: RECTANGULAR; Ready or Busy: YES; No. of Words: 16777216 words;

100 ns

20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES

1

BOTTOM/TOP

YES

YES

YES

2

100000 Write/Erase Cycles

R-PBGA-B56

9 mm

134217728 bit

FLASH

8

3

1

128

56

16777216 words

16M

ASYNCHRONOUS

105 Cel

-40 Cel

16MX8

3-STATE

PLASTIC/EPOXY

VFBGA

BGA56,8X8,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

32

PARALLEL

3

YES

AEC-Q100; TS 16949

1 mm

128K

.0002 Amp

100 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

.8 mm

BOTTOM

YES

NAND TYPE

7 mm

S29GL256S10GHB013 by Infineon Technologies

S29GL256S10GHB013

Infineon Technologies

FLASH; No. of Terminals: 56; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Access Time: 100 ns; Programming Voltage (V): 3;

100 ns

20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES

1

YES

YES

YES

2

100000 Write/Erase Cycles

R-PBGA-B56

9 mm

268435456 bit

FLASH

8

3

1

256

56

33554432 words

32M

ASYNCHRONOUS

105 Cel

-40 Cel

32MX8

3-STATE

PLASTIC/EPOXY

VFBGA

BGA56,8X8,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

32

PARALLEL

3

YES

AEC-Q100; TS 16949

1 mm

128K

.0002 Amp

100 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

.8 mm

BOTTOM

YES

NAND TYPE

7 mm

W25N02KVZEIU by Winbond Electronics

W25N02KVZEIU

Winbond Electronics

W25N02KVZEIU by Winbond Electronics is a 256MX8 SLC NAND flash memory with 104 MHz clock frequency, SPI serial bus type, and 60000 write/erase cycles endurance. It operates at -40 to 85 °C, suitable for applications requiring high-speed data storage in compact devices like smartphones and IoT gadgets.

104 MHz

10

60000 Write/Erase Cycles

R-XDSO-N8

8 mm

2147483648 bit

FLASH

8

1

8

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX8

3-STATE

UNSPECIFIED

HVSON

SOLCC8,.3

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

3

.8 mm

SPI

.00005 Amp

35 mA

3.6 V

2.7 V

3

YES

CMOS

NO LEAD

1.27 mm

DUAL

SLC NAND TYPE

6 mm

HARDWARE/SOFTWARE

W25N02KVZEIR by Winbond Electronics

W25N02KVZEIR

Winbond Electronics

W25N02KVZEIR by Winbond Electronics is a 256MX8 SLC NAND flash memory with 104 MHz clock frequency and SPI serial bus type. It operates at -40 to 85 °C, has 60000 write/erase cycles endurance, and is suitable for applications requiring high-speed data storage in compact devices.

104 MHz

10

60000 Write/Erase Cycles

R-XDSO-N8

8 mm

2147483648 bit

FLASH

8

1

8

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX8

3-STATE

UNSPECIFIED

HVSON

SOLCC8,.3

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

3

.8 mm

SPI

.00005 Amp

35 mA

3.6 V

2.7 V

3

YES

CMOS

NO LEAD

1.27 mm

DUAL

SLC NAND TYPE

6 mm

HARDWARE/SOFTWARE

SFSD0512N1BM1TO-I-ME-221-STD by Swissbit Ag

SFSD0512N1BM1TO-I-ME-221-STD

Swissbit Ag

Swissbit Ag's SFSD0512N1BM1TO-I-ME-221-STD is a 512MX8 SLC NAND flash memory chip with 208 MHz clock frequency. It operates at 3.3V, has 100K write/erase cycles endurance, and serial interface. Ideal for applications requiring high-speed data storage in compact devices due to its small form factor and low power consumption.

208 MHz

1

100000 Write/Erase Cycles

R-XUUC-N8

15 mm

4294967296 bit

FLASH CARD

8

1

8

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX8

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

SERIAL

3.3

1 mm

.015 Amp

80 mA

3.6 V

2.7 V

3.3

YES

CMOS

NO LEAD

UPPER

SLC NAND TYPE

11 mm

IS25WX256-JHLA3 by Integrated Silicon Solution

IS25WX256-JHLA3

Integrated Silicon Solution

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Width: 6 mm; Serial Bus Type: SPI;

200 MHz

100

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

125 Cel

-40 Cel

32MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

9

AEC-Q100

1.2 mm

SPI

.00005 Amp

70 mA

1.95 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

NOT SPECIFIED

NOR TYPE

6 mm

HARDWARE/SOFTWARE

MT25QL128ABB1EW7-CSIT by Micron Technology

MT25QL128ABB1EW7-CSIT

Micron Technology

Micron Technology's MT25QL128ABB1EW7-CSIT is a 16MX8 NOR flash memory with 133 MHz clock frequency, SPI serial bus type. It operates at -40 to 85 °C, has 100000 write/erase cycles endurance, and is suitable for applications requiring high-speed data storage in compact devices.

133 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

6 mm

134217728 bit

FLASH

8

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

3

.8 mm

SPI

.00003 Amp

35 mA

3.6 V

2.7 V

3

YES

CMOS

NO LEAD

1.27 mm

DUAL

30

NOR TYPE

5 mm

HARDWARE/SOFTWARE

MT29F8G08ADADAH4-IT:DTR by Micron Technology

MT29F8G08ADADAH4-IT:DTR

Micron Technology

Micron Technology's MT29F8G08ADADAH4-IT:DTR is a 3.3V SLC NAND flash memory with 1GX8 organization, offering 2K page size and 128K sector size. It features a very thin profile grid array package suitable for applications requiring high endurance of up to 100,000 write/erase cycles. Operating in asynchronous mode, it has a max temperature of 85°C and min of -40°C, making it ideal for various industrial and automotive uses.

YES

NO

10

100000 Write/Erase Cycles

R-PBGA-B63

11 mm

8589934592 bit

FLASH

8

1

8K

63

1073741824 words

1G

ASYNCHRONOUS

85 Cel

-40 Cel

1GX8

3-STATE

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

3.3

YES

1 mm

128K

.0001 Amp

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

2701185 by Phoenix Contact

2701185

Phoenix Contact

CONFIGURATION MEMORY; Package Code: DIE; Package Shape: RECTANGULAR; Maximum Seated Height: 3.3 mm; JESD-30 Code: R-XUUC-N; Maximum Operating Temperature: 85 Cel;

R-XUUC-N

42.8 mm

17179869184 bit

CONFIGURATION MEMORY

8

1

2147483648 words

2G

85 Cel

-40 Cel

2GX8

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

3.3

3.3 mm

3.465 V

3.135 V

3.3

YES

CMOS

NO LEAD

UPPER

NOR TYPE

36.4 mm

MT29F8G08AAAWP:ATR by Micron Technology

MT29F8G08AAAWP:ATR

Micron Technology

FLASH; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Length: 18.4 mm; Page Size (words): 2K;

YES

NO

10

100000 Write/Erase Cycles

R-PDSO-G48

18.4 mm

8589934592 bit

FLASH

8

1

8K

48

1073741824 words

1G

ASYNCHRONOUS

70 Cel

0 Cel

1GX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

2K

PARALLEL

260

3.3

YES

1.2 mm

128K

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

GULL WING

.5 mm

DUAL

30

NO

SLC NAND TYPE

12 mm

S29AL016J70TFM020 by Infineon Technologies

S29AL016J70TFM020

Infineon Technologies

FLASH; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Words Code: 1M; Maximum Access Time: 70 ns;

70 ns

8

BOTTOM

YES

YES

YES

20

1000000 Write/Erase Cycles

R-PDSO-G48

18.4 mm

16777216 bit

FLASH

16

1

1,2,1,31

48

1048576 words

1M

ASYNCHRONOUS

125 Cel

-40 Cel

1MX16

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3

YES

AEC-Q100

1.2 mm

16K,8K,32K,64K

.000005 Amp

30 mA

3.6 V

2.7 V

3

YES

CMOS

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

MT29F256G08CJABAWP:B by Micron Technology

MT29F256G08CJABAWP:B

Micron Technology

FLASH; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G48; No. of Words: 34359738368 words;

NO

NO

3000 Write/Erase Cycles

R-PDSO-G48

18.4 mm

274877906944 bit

FLASH

8

1

48

34359738368 words

32G

ASYNCHRONOUS

70 Cel

0 Cel

32GX8

PLASTIC/EPOXY

TSOP1

TSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

8K

PARALLEL

3.3

YES

1.2 mm

.00005 Amp

3.6 V

2.7 V

3.3

YES

CMOS

GULL WING

.5 mm

QUAD

NO

MLC NAND TYPE

12 mm

HARDWARE

S29GL064N11FFIS30 by Infineon Technologies

S29GL064N11FFIS30

Infineon Technologies

FLASH; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Access Time: 110 ns; Terminal Form: BALL;

110 ns

8

NO

NO

R-PBGA-B64

13 mm

67108864 bit

FLASH

16

1

64

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

3

YES

1.2 mm

64K

3.6 V

1.65 V

3

YES

CMOS

BALL

1 mm

BOTTOM

YES

NOR TYPE

10 mm

S29GL064N11FFIS43 by Infineon Technologies

S29GL064N11FFIS43

Infineon Technologies

FLASH; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Technology: CMOS; Toggle Bit: YES;

110 ns

8

NO

NO

R-PBGA-B64

13 mm

67108864 bit

FLASH

16

1

64

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

3

YES

1.2 mm

64K

3.6 V

1.65 V

3

YES

CMOS

BALL

1 mm

BOTTOM

YES

NOR TYPE

10 mm

S29GL064N90FFIS13 by Infineon Technologies

S29GL064N90FFIS13

Infineon Technologies

FLASH; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Length: 13 mm; Command User Interface: NO;

90 ns

8

NO

NO

R-PBGA-B64

13 mm

67108864 bit

FLASH

16

1

64

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3

YES

1.4 mm

64K

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

YES

NOR TYPE

11 mm

S29GL064N90FFIS22 by Infineon Technologies

S29GL064N90FFIS22

Infineon Technologies

FLASH; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel; Parallel or Serial: PARALLEL;

90 ns

8

NO

NO

R-PBGA-B64

13 mm

67108864 bit

FLASH

16

1

64

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3

YES

1.4 mm

64K

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

YES

NOR TYPE

11 mm

S29GL064N90FFIS23 by Infineon Technologies

S29GL064N90FFIS23

Infineon Technologies

FLASH; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Surface Mount: YES; Terminal Position: BOTTOM;

90 ns

8

NO

NO

R-PBGA-B64

13 mm

67108864 bit

FLASH

16

1

64

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3

YES

1.4 mm

64K

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

YES

NOR TYPE

11 mm

S29GL064N90FFIS32 by Infineon Technologies

S29GL064N90FFIS32

Infineon Technologies

FLASH; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Programming Voltage (V): 3; Width: 10 mm;

90 ns

8

NO

NO

R-PBGA-B64

13 mm

67108864 bit

FLASH

16

1

64

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

3

YES

1.2 mm

64K

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

YES

NOR TYPE

10 mm

S29GL064N90FFIS33 by Infineon Technologies

S29GL064N90FFIS33

Infineon Technologies

FLASH; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Functions: 1; Parallel or Serial: PARALLEL;

90 ns

8

NO

NO

R-PBGA-B64

13 mm

67108864 bit

FLASH

16

1

64

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

3

YES

1.2 mm

64K

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

YES

NOR TYPE

10 mm

S29GL032N11FFIS22 by Infineon Technologies

S29GL032N11FFIS22

Infineon Technologies

FLASH; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Width: 11 mm; Terminal Position: BOTTOM;

110 ns

8

NO

NO

R-PBGA-B64

13 mm

33554432 bit

FLASH

16

1

64

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3

YES

1.4 mm

64K

3.6 V

1.65 V

3

YES

CMOS

BALL

1 mm

BOTTOM

YES

NOR TYPE

11 mm

S29GL032N11FFIS30 by Infineon Technologies

S29GL032N11FFIS30

Infineon Technologies

FLASH; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Sector Size (Words): 64K; Maximum Seated Height: 1.2 mm;

110 ns

8

NO

NO

R-PBGA-B64

13 mm

33554432 bit

FLASH

16

1

64

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

3

YES

1.2 mm

64K

3.6 V

1.65 V

3

YES

CMOS

BALL

1 mm

BOTTOM

YES

NOR TYPE

10 mm

S29GL032N11FFIS32 by Infineon Technologies

S29GL032N11FFIS32

Infineon Technologies

FLASH; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Pitch: 1 mm; Parallel or Serial: PARALLEL;

110 ns

8

NO

NO

R-PBGA-B64

13 mm

33554432 bit

FLASH

16

1

64

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

3

YES

1.2 mm

64K

3.6 V

1.65 V

3

YES

CMOS

BALL

1 mm

BOTTOM

YES

NOR TYPE

10 mm

S29GL032N11FFIS42 by Infineon Technologies

S29GL032N11FFIS42

Infineon Technologies

FLASH; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Programming Voltage (V): 3; Terminal Pitch: 1 mm;

110 ns

8

NO

NO

R-PBGA-B64

13 mm

33554432 bit

FLASH

16

1

64

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

3

YES

1.2 mm

64K

3.6 V

1.65 V

3

YES

CMOS

BALL

1 mm

BOTTOM

YES

NOR TYPE

10 mm

S29GL032N90FFIS12 by Infineon Technologies

S29GL032N90FFIS12

Infineon Technologies

FLASH; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Length: 13 mm; Maximum Seated Height: 1.4 mm;

90 ns

8

NO

NO

R-PBGA-B64

13 mm

33554432 bit

FLASH

16

1

64

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3

YES

1.4 mm

64K

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

YES

NOR TYPE

11 mm

S29GL032N90FFIS13 by Infineon Technologies

S29GL032N90FFIS13

Infineon Technologies

FLASH; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, LOW PROFILE; No. of Words Code: 2M;

90 ns

8

NO

NO

R-PBGA-B64

13 mm

33554432 bit

FLASH

16

1

64

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3

YES

1.4 mm

64K

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

YES

NOR TYPE

11 mm

S29GL032N90FFIS32 by Infineon Technologies

S29GL032N90FFIS32

Infineon Technologies

FLASH; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Alternate Memory Width: 8; Programming Voltage (V): 3;

90 ns

8

NO

NO

R-PBGA-B64

13 mm

33554432 bit

FLASH

16

1

64

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

3

YES

1.2 mm

64K

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

YES

NOR TYPE

10 mm

S29GL032N90FFIS33 by Infineon Technologies

S29GL032N90FFIS33

Infineon Technologies

FLASH; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Form: BALL; Width: 10 mm;

90 ns

8

NO

NO

R-PBGA-B64

13 mm

33554432 bit

FLASH

16

1

64

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

3

YES

1.2 mm

64K

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

YES

NOR TYPE

10 mm

S29GL064N11FFIS12 by Infineon Technologies

S29GL064N11FFIS12

Infineon Technologies

FLASH; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Organization: 4MX16; Terminal Position: BOTTOM;

110 ns

8

NO

NO

R-PBGA-B64

13 mm

67108864 bit

FLASH

16

1

64

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3

YES

1.4 mm

64K

3.6 V

1.65 V

3

YES

CMOS

BALL

1 mm

BOTTOM

YES

NOR TYPE

11 mm

S29GL064N11FFIS40 by Infineon Technologies

S29GL064N11FFIS40

Infineon Technologies

FLASH; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Programming Voltage (V): 3; Nominal Supply Voltage / Vsup (V): 3;

110 ns

8

NO

NO

R-PBGA-B64

13 mm

67108864 bit

FLASH

16

1

64

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

3

YES

1.2 mm

64K

3.6 V

1.65 V

3

YES

CMOS

BALL

1 mm

BOTTOM

YES

NOR TYPE

10 mm

S29GL064N11FFIS42 by Infineon Technologies

S29GL064N11FFIS42

Infineon Technologies

FLASH; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Operating Mode: ASYNCHRONOUS; Package Body Material: PLASTIC/EPOXY;

110 ns

8

NO

NO

R-PBGA-B64

13 mm

67108864 bit

FLASH

16

1

64

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

3

YES

1.2 mm

64K

3.6 V

1.65 V

3

YES

CMOS

BALL

1 mm

BOTTOM

YES

NOR TYPE

10 mm

S29GL064N90FFIS12 by Infineon Technologies

S29GL064N90FFIS12

Infineon Technologies

FLASH; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Programming Voltage (V): 3; Operating Mode: ASYNCHRONOUS;

90 ns

8

NO

NO

R-PBGA-B64

13 mm

67108864 bit

FLASH

16

1

64

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3

YES

1.4 mm

64K

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

YES

NOR TYPE

11 mm

S29GL064N90FFIS20 by Infineon Technologies

S29GL064N90FFIS20

Infineon Technologies

S29GL064N90FFIS20 by Infineon Technologies is a 64Mb NOR Flash Memory with 4MX16 organization, operating at 3V. It features an access time of 90ns and offers parallel programming. Ideal for applications requiring fast read/write speeds in a compact form factor.

90 ns

8

NO

NO

R-PBGA-B64

13 mm

67108864 bit

FLASH

16

1

64

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3

YES

1.4 mm

64K

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

YES

NOR TYPE

11 mm

S29GL064N90FFIS40 by Infineon Technologies

S29GL064N90FFIS40

Infineon Technologies

FLASH; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Form: BALL; Memory Density: 67108864 bit;

90 ns

8

NO

NO

R-PBGA-B64

13 mm

67108864 bit

FLASH

16

1

64

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

3

YES

1.2 mm

64K

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

YES

NOR TYPE

10 mm