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RECTANGULAR Flash Memory 1,448

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
MT29F256G08CECCBH6-6R:C by Micron Technology

MT29F256G08CECCBH6-6R:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 152; Package Code: VBGA; Package Shape: RECTANGULAR; Type: MLC NAND TYPE;

R-PBGA-B152

18 mm

274877906944 bit

FLASH

8

1

152

34359738368 words

32G

SYNCHRONOUS/ASYNCHRONOUS

70 Cel

0 Cel

32GX8

PLASTIC/EPOXY

VBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

MLC NAND TYPE

14 mm

MT29F256G08CEECBH6-12:C by Micron Technology

MT29F256G08CEECBH6-12:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 152; Package Code: VBGA; Package Shape: RECTANGULAR; Surface Mount: YES;

R-PBGA-B152

18 mm

274877906944 bit

FLASH

8

1

152

34359738368 words

32G

SYNCHRONOUS/ASYNCHRONOUS

70 Cel

0 Cel

32GX8

PLASTIC/EPOXY

VBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

MLC NAND TYPE

14 mm

MT29F512G08CKCCBH7-6R:C by Micron Technology

MT29F512G08CKCCBH7-6R:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 152; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Density: 549755813888 bit;

R-PBGA-B152

18 mm

549755813888 bit

FLASH

8

1

152

68719476736 words

64G

SYNCHRONOUS/ASYNCHRONOUS

70 Cel

0 Cel

64GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

MLC NAND TYPE

14 mm

MT29F512G08CKECBH7-12:C by Micron Technology

MT29F512G08CKECBH7-12:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 152; Package Code: TBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

R-PBGA-B152

18 mm

549755813888 bit

FLASH

8

1

152

68719476736 words

64G

SYNCHRONOUS/ASYNCHRONOUS

70 Cel

0 Cel

64GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

MLC NAND TYPE

14 mm

AT25DF041A-SHF-B by Adesto Technologies

AT25DF041A-SHF-B

Adesto Technologies

AT25DF041A-SHF-B by Adesto Technologies is a NOR type flash memory with 512Kx8 organization and 4194304 bit memory density. It operates at temperatures ranging from -40 to 85 °C and has a max clock frequency of 50 MHz. It is commonly used in industrial applications for its endurance of 100000 write/erase cycles and SPI serial bus type.

50 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

4194304 bit

FLASH

8

8

524288 words

512K

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

2.5/3.3

2.7

Not Qualified

SPI

.00002 Amp

Flash Memories

20 mA

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOR TYPE

HARDWARE/SOFTWARE

THGBMHG7C2LBAIL by Toshiba

THGBMHG7C2LBAIL

Toshiba

FLASH; Temperature Grade: OTHER; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

R-PBGA-B153

137438953472 bit

FLASH

8

1

153

17179869184 words

16G

ASYNCHRONOUS

85 Cel

-25 Cel

16GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

PARALLEL

2.7

3.6 V

2.7 V

YES

CMOS

OTHER

BALL

BOTTOM

THGBMHG8C4LBAIR by Toshiba

THGBMHG8C4LBAIR

Toshiba

FLASH; Temperature Grade: OTHER; No. of Terminals: 169; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

R-PBGA-B169

274877906944 bit

FLASH

8

1

169

34359738368 words

32G

ASYNCHRONOUS

85 Cel

-25 Cel

32GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

PARALLEL

2.7

3.6 V

2.7 V

YES

CMOS

OTHER

BALL

BOTTOM

IS25LP128F-RMLE by Integrated Silicon Solution

IS25LP128F-RMLE

Integrated Silicon Solution

IS25LP128F-RMLE by Integrated Silicon Solution is a 16Mx8 NOR type flash memory with 166 MHz clock frequency. Operating at -40 to 105 °C, it offers 100000 Write/Erase Cycles endurance and SPI serial bus interface. Ideal for industrial applications requiring high-speed data storage in compact form factor.

ALSO OPERATES WITH 133MHZ @ 2.3VMIN SUPPLY

1

166 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

10.31 mm

134217728 bit

FLASH

8

1

16

16777216 words

16M

SYNCHRONOUS

105 Cel

-40 Cel

16MX8

3-STATE

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3

2.65 mm

SPI

.00007 Amp

30 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

7.49 mm

HARDWARE/SOFTWARE

IS25WP128F-JKLE by Integrated Silicon Solution

IS25WP128F-JKLE

Integrated Silicon Solution

IS25WP128F-JKLE by Integrated Silicon Solution is a 16MX8 NOR type flash memory with 166 MHz clock frequency. Operating at 1.8V, it offers 100000 write/erase cycles and SPI serial bus interface. Ideal for industrial applications requiring high endurance and fast data transfer in compact designs.

ALSO OPERATES WITH 133MHZ @ 1.65VMIN SUPPLY

1

166 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

6 mm

134217728 bit

FLASH

8

1

8

16777216 words

16M

SYNCHRONOUS

105 Cel

-40 Cel

16MX8

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

.8 mm

SPI

.000075 Amp

30 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

5 mm

HARDWARE/SOFTWARE

IS25WP512M-RHLA3 by Integrated Silicon Solution

IS25WP512M-RHLA3

Integrated Silicon Solution

IS25WP512M-RHLA3 by Integrated Silicon Solution is a 64MX8 NOR type flash memory with a density of 536870912 bit. It operates at a max clock frequency of 133 MHz and has an endurance of 100000 Write/Erase Cycles. This memory IC is commonly used in automotive applications due to its AEC-Q100 screening level and temperature grade.

1

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

125 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

.00026 Amp

35 mA

1.95 V

1.65 V

1.8

YES

CMOS

AUTOMOTIVE

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

10

NOR TYPE

6 mm

HARDWARE/SOFTWARE

IS25WP512M-RMLE by Integrated Silicon Solution

IS25WP512M-RMLE

Integrated Silicon Solution

IS25WP512M-RMLE by Integrated Silicon Solution is a 64MX8 NOR type Flash Memory with 133 MHz clock frequency. Operating at -40 to 105 °C, it offers 100000 Write/Erase Cycles endurance. Ideal for industrial applications requiring high-speed data storage in compact form factor.

1

133 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

e3

10.31 mm

536870912 bit

FLASH

8

1

16

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8

2.65 mm

SPI

.00014 Amp

35 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

Tin (Sn)

GULL WING

1.27 mm

DUAL

10

NOR TYPE

7.49 mm

HARDWARE/SOFTWARE

MTFDDAT128MBD-1AK12ITYY by Micron Technology

MTFDDAT128MBD-1AK12ITYY

Micron Technology

FLASH MODULE; Temperature Grade: INDUSTRIAL; Package Shape: RECTANGULAR; No. of Words: 137438953472 words; Terminal Position: SINGLE; Technology: CMOS;

R-XSMA-N

1099511627776 bit

FLASH MODULE

8

1

137438953472 words

128G

ASYNCHRONOUS

85 Cel

-40 Cel

128GX8

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NO

CMOS

INDUSTRIAL

NO LEAD

SINGLE

TLC NAND TYPE

MTFDDAT256MBD-1AK12ITYY by Micron Technology

MTFDDAT256MBD-1AK12ITYY

Micron Technology

FLASH MODULE; Temperature Grade: INDUSTRIAL; Package Shape: RECTANGULAR; Technology: CMOS; Package Style (Meter): MICROELECTRONIC ASSEMBLY; No. of Functions: 1;

R-XSMA-N

2199023255552 bit

FLASH MODULE

8

1

274877906944 words

256G

ASYNCHRONOUS

85 Cel

-40 Cel

256GX8

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NO

CMOS

INDUSTRIAL

NO LEAD

SINGLE

TLC NAND TYPE

W25Q16JLZPIG by Winbond Electronics

W25Q16JLZPIG

Winbond Electronics

W25Q16JLZPIG by Winbond Electronics is a 16Mb NOR flash memory IC with synchronous operation, 104 MHz clock frequency, and 2.7-3.6V supply voltage range. Ideal for industrial applications requiring fast data access and reliable non-volatile storage in a compact 8-terminal package with serial interface.

IT ALSO OPERATES AT FREQUENCY 50 MHZ AT SUPPLY VOLTAGE 2.3 TO 2.7 V

1

104 MHz

R-PDSO-N8

6 mm

16777216 bit

FLASH

8

1

8

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

2.7

.8 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

5 mm

MT29F1G08ABADAH4-ITX:D by Micron Technology

MT29F1G08ABADAH4-ITX:D

Micron Technology

MT29F1G08ABADAH4-ITX:D by Micron Technology is a 3.3V SLC NAND flash memory with 128Mx8 organization, operating from -40 to 85°C. It features a 2K word page size, 128K word sector size, and parallel interface. Ideal for industrial applications requiring fast access times and low standby current.

25 ns

YES

NO

R-PBGA-B63

e1

11 mm

1073741824 bit

FLASH

8

1

1K

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

3.3

3.3

Not Qualified

YES

1 mm

128K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

SFCF0128H1BK1MT-I-MS-553-SMA by Swissbit Ag

SFCF0128H1BK1MT-I-MS-553-SMA

Swissbit Ag

SFCF0128H1BK1MT-I-MS-553-SMA by Swissbit Ag is a 128MX8 SLC NAND flash memory chip with 50 terminals, operating at 3.3V. It features synchronous operation, industrial temperature grade, and parallel interface. Ideal for applications requiring high-speed data storage in harsh environments.

300 ns

ALSO OPERATES AT 5V

R-XUUC-N50

42.8 mm

1073741824 bit

FLASH CARD

8

1

50

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

PARALLEL

NOT SPECIFIED

3.3

4.1 mm

3.63 V

2.97 V

3.3

YES

CMOS

INDUSTRIAL

NO LEAD

UPPER

NOT SPECIFIED

SLC NAND TYPE

36.4 mm

SFCF0512H1BK1MT-I-MS-553-SMA by Swissbit Ag

SFCF0512H1BK1MT-I-MS-553-SMA

Swissbit Ag

SFCF0512H1BK1MT-I-MS-553-SMA by Swissbit Ag is a 512Mx8 SLC NAND flash memory chip with synchronous operation. It operates at a voltage range of 2.97V to 3.63V, suitable for industrial applications requiring fast access times of up to 300ns. This rectangular surface-mount chip has an uncased package style and is designed for parallel data transfer with a memory density of 4294967296 bits.

300 ns

ALSO OPERATES AT 5V

R-XUUC-N50

42.8 mm

4294967296 bit

FLASH CARD

8

1

50

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX8

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

PARALLEL

NOT SPECIFIED

3.3

4.1 mm

3.63 V

2.97 V

3.3

YES

CMOS

INDUSTRIAL

NO LEAD

UPPER

NOT SPECIFIED

SLC NAND TYPE

36.4 mm

SFCF1024H1BK2MT-I-MO-553-SMA by Swissbit Ag

SFCF1024H1BK2MT-I-MO-553-SMA

Swissbit Ag

SFCF1024H1BK2MT-I-MO-553-SMA by Swissbit Ag is a 1GX8 SLC NAND flash memory chip with 1073741824 words capacity. Operating at 3.3V, it has an industrial temperature grade and parallel interface. Ideal for applications requiring high-speed data storage in harsh environments.

300 ns

ALSO OPERATES AT 5V

R-XUUC-N50

42.8 mm

8589934592 bit

FLASH CARD

8

1

50

1073741824 words

1G

SYNCHRONOUS

85 Cel

-40 Cel

1GX8

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

PARALLEL

NOT SPECIFIED

3.3

4.1 mm

3.63 V

2.97 V

3.3

YES

CMOS

INDUSTRIAL

NO LEAD

UPPER

NOT SPECIFIED

SLC NAND TYPE

36.4 mm

MT29F1G16ABBEAH4-IT:E by Micron Technology

MT29F1G16ABBEAH4-IT:E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Length: 11 mm;

R-PBGA-B63

11 mm

1073741824 bit

FLASH

16

1

63

67108864 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

MT25QU128ABA8E12-1SIT by Micron Technology

MT25QU128ABA8E12-1SIT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Pitch: 1 mm;

166 MHz

R-PBGA-B24

8 mm

134217728 bit

FLASH

1

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

MT29F2G16ABAEAWP-AAT:E by Micron Technology

MT29F2G16ABAEAWP-AAT:E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Functions: 1;

R-PDSO-G48

18.4 mm

2147483648 bit

FLASH

16

1

48

134217728 words

128M

ASYNCHRONOUS

105 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

SLC NAND TYPE

12 mm

W25Q256JWBIM by Winbond Electronics

W25Q256JWBIM

Winbond Electronics

Winbond Electronics' W25Q256JWBIM is a 32MX8 NOR flash memory with 133 MHz clock frequency, ideal for industrial applications. Featuring 100000 Write/Erase Cycles endurance and SPI serial bus type, it operates at -40 to 85 °C with 1.7-1.95 V supply voltage range.

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

268435456 bit

FLASH

8

1

8

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

1.2 mm

SPI

.0001 Amp

12 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NOR TYPE

6 mm

HARDWARE/SOFTWARE

W25Q256JWBIQ by Winbond Electronics

W25Q256JWBIQ

Winbond Electronics

Winbond Electronics' W25Q256JWBIQ is a NOR flash memory with 32MX8 organization, operating at 133 MHz. It offers 100000 Write/Erase cycles endurance and operates on a supply voltage range of 1.7V to 1.95V. Ideal for industrial applications requiring high-speed data storage in compact devices.

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

268435456 bit

FLASH

8

1

8

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

1.2 mm

SPI

.0001 Amp

12 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NOR TYPE

6 mm

HARDWARE/SOFTWARE

W25Q256JWEIQ by Winbond Electronics

W25Q256JWEIQ

Winbond Electronics

Winbond Electronics' W25Q256JWEIQ is a NOR flash memory with 32MX8 organization, operating at 133 MHz. It has a supply voltage range of 1.7V to 1.95V and offers 100000 write/erase cycles. Ideal for industrial applications requiring high-speed synchronous operation in compact designs.

133 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

8 mm

268435456 bit

FLASH

8

1

8

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

HVQCCN

SOLCC8,.3

RECTANGULAR

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

.8 mm

SPI

.0001 Amp

12 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

6 mm

HARDWARE/SOFTWARE

W25Q256JWFIQ by Winbond Electronics

W25Q256JWFIQ

Winbond Electronics

Winbond Electronics' W25Q256JWFIQ is a NOR type flash memory with 32MX8 organization, operating at 133 MHz. It features SPI serial bus type, 100000 write/erase cycles endurance, and 1.8V programming voltage. Ideal for industrial applications requiring high-speed data storage in compact devices.

133 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

10.31 mm

268435456 bit

FLASH

8

1

8

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

1.8

2.64 mm

SPI

.0001 Amp

12 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

7.49 mm

HARDWARE/SOFTWARE

W25Q256JWPIQ by Winbond Electronics

W25Q256JWPIQ

Winbond Electronics

W25Q256JWPIQ by Winbond Electronics is a NOR flash memory with 32MX8 organization, operating at a max clock frequency of 133 MHz. It has a memory density of 268435456 bit and offers 100000 write/erase cycles. This flash memory is commonly used in industrial applications requiring high-speed data storage.

133 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

6 mm

268435456 bit

FLASH

8

1

8

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

HVQCCN

SOLCC8,.25

RECTANGULAR

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

.8 mm

SPI

.0001 Amp

12 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

5 mm

HARDWARE/SOFTWARE

M29W320DB80ZA3E by Micron Technology

M29W320DB80ZA3E

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 48; Package Code: TFBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH;

80 ns

8

R-PBGA-B48

8 mm

33554432 bit

FLASH

16

1

48

2097152 words

2M

ASYNCHRONOUS

125 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

BALL

.8 mm

BOTTOM

NOT SPECIFIED

6 mm

NAND512R3A2SZAXE by Micron Technology

NAND512R3A2SZAXE

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: TFBGA; Package Shape: RECTANGULAR; Type: SLC NAND TYPE;

45 ns

YES

NO

R-PBGA-B63

11 mm

512753664 bit

FLASH

8

1

4K

63

64094208 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

512

PARALLEL

1.8

1.8

Not Qualified

YES

1.05 mm

16K

.00005 Amp

Flash Memories

15 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

NAND512W3A2SNXE by Micron Technology

NAND512W3A2SNXE

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Surface Mount: YES;

35 ns

YES

NO

R-PDSO-G48

18.4 mm

512753664 bit

FLASH

8

1

4K

48

64094208 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

512

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

16K

.00005 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

NAND512W3A2SZAXE by Micron Technology

NAND512W3A2SZAXE

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

35 ns

YES

NO

R-PBGA-B63

11 mm

512753664 bit

FLASH

8

1

4K

63

64094208 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

512

PARALLEL

3/3.3

3

Not Qualified

YES

1.05 mm

16K

.00005 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

NAND512R3A2SZA6F by Micron Technology

NAND512R3A2SZA6F

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Sectors/Size: 4K;

45 ns

YES

NO

R-PBGA-B63

11 mm

512753664 bit

FLASH

8

1

4K

63

64094208 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

512

PARALLEL

1.8

1.8

Not Qualified

YES

1.05 mm

16K

.00005 Amp

Flash Memories

15 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

NAND256W3A2BZAXE by Micron Technology

NAND256W3A2BZAXE

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 55; Package Code: TFBGA; Package Shape: RECTANGULAR; Programming Voltage (V): 3;

45 ns

YES

NO

R-PBGA-B55

10 mm

268435456 bit

FLASH

8

1

2K

55

33554432 words

32M

ASYNCHRONOUS

85 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TFBGA

BGA55,8X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

512

PARALLEL

3/3.3

3

Not Qualified

YES

1.05 mm

16K

.00005 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

8 mm

NAND512R3A2SN6E by Micron Technology

NAND512R3A2SN6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Technology: CMOS;

R-PDSO-G48

e3

18.4 mm

512753664 bit

FLASH

8

1

48

64094208 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

1.8

1.2 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

30

SLC NAND TYPE

12 mm

NAND512R3A2SN6F by Micron Technology

NAND512R3A2SN6F

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Length: 18.4 mm;

R-PDSO-G48

e3

18.4 mm

512753664 bit

FLASH

8

1

48

64094208 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

1.8

1.2 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

30

SLC NAND TYPE

12 mm

M25P16-VMF3PB by Micron Technology

M25P16-VMF3PB

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Operating Temperature: 125 Cel;

75 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

10.3 mm

16777216 bit

FLASH

8

1

16

2097152 words

2M

SYNCHRONOUS

125 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

3/3.3

3

Not Qualified

2.65 mm

SPI

.0001 Amp

Flash Memories

15 mA

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

GULL WING

1.27 mm

DUAL

NOR TYPE

7.5 mm

HARDWARE/SOFTWARE

MT29F4G16ABADAH4-AIT:D by Micron Technology

MT29F4G16ABADAH4-AIT:D

Micron Technology

Micron's MT29F4G16ABADAH4-AIT:D is a 256MX16 SLC NAND flash memory with 3.3V programming voltage. Operating in industrial temperatures (-40 to 85°C), it offers 4294967296-bit memory density for parallel applications. The package features a grid array style with bottom terminal position, suitable for surface mount designs.

R-PBGA-B63

e1

4294967296 bit

FLASH

16

1

63

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

PARALLEL

260

3.3

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

BOTTOM

30

SLC NAND TYPE

M29W640GT7AN6E by Micron Technology

M29W640GT7AN6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

70 ns

8

R-PDSO-G48

18.4 mm

67108864 bit

FLASH

16

1

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

12 mm

MX25LM51245GMI00 by Macronix

MX25LM51245GMI00

Macronix

MX25LM51245GMI00 by Macronix is a 64MX8 Flash Memory with a memory density of 536870912 bits. It operates at a max clock frequency of 133 MHz and has an industrial temperature grade. This memory IC is commonly used in applications requiring high-speed data storage.

1

133 MHz

R-PDSO-G16

10.3 mm

536870912 bit

FLASH

8

1

16

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

3

2.65 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

7.52 mm

MX66L2G45GXRI00 by Macronix

MX66L2G45GXRI00

Macronix

Macronix's MX66L2G45GXRI00 is a 256MX8 NOR flash memory with 133 MHz clock frequency, SPI serial bus type. Operating at -40 to 85 °C, it offers 100000 write/erase cycles endurance. Ideal for industrial applications requiring high-speed data storage in compact devices.

IT CAN ALSO CONFIGURED AS 1G X 2 AND 2G X 1

4

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX8

3-STATE

PLASTIC/EPOXY

LBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

SERIAL

NOT SPECIFIED

3

1.3 mm

SPI

.0006 Amp

130 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NOR TYPE

6 mm

HARDWARE/SOFTWARE

MX25UM25645GMI00 by Macronix

MX25UM25645GMI00

Macronix

Macronix's MX25UM25645GMI00 is a 32MX8 Flash Memory with 268Mbit density. It operates at 133MHz clock frequency, suitable for industrial applications. With a small outline package and synchronous mode, it offers reliable performance in a compact form factor.

1

133 MHz

R-PDSO-G16

10.3 mm

268435456 bit

FLASH

8

1

16

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

1.8

2.65 mm

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

7.52 mm

MX25UM51245GXDIH0 by Macronix

MX25UM51245GXDIH0

Macronix

Macronix's MX25UM51245GXDIH0 is a 64MX8 Flash Memory with 536Mbit density. It operates at 250MHz clock frequency, suitable for industrial applications. With synchronous mode and serial interface, it offers fast data transfer in a compact GRID ARRAY package.

1

250 MHz

R-PBGA-B24

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

MX25UM51345GXDI00 by Macronix

MX25UM51345GXDI00

Macronix

Macronix's MX25UM51345GXDI00 is a 64MX8 Flash Memory with 67108864 words. Operating at 200 MHz, it has a voltage range of 1.65V to 2V and temperature grade of INDUSTRIAL. Ideal for applications requiring high-speed data storage in industrial environments.

1

200 MHz

R-PBGA-B24

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

1.8

1.2 mm

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

6 mm

IS25WP256E-JLLE by Integrated Silicon Solution

IS25WP256E-JLLE

Integrated Silicon Solution

IS25WP256E-JLLE by Integrated Silicon Solution is a 32MX8 flash memory IC with 268Mbit density. It operates at 166MHz clock frequency, with a supply voltage range of 1.65V to 1.95V. Ideal for industrial applications requiring high-speed synchronous operation in a compact package style.

1

166 MHz

R-PDSO-N8

8 mm

268435456 bit

FLASH

8

1

8

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

.8 mm

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

6 mm

MT25TL512HBA8ESF-0AAT by Micron Technology

MT25TL512HBA8ESF-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

1

133 MHz

R-PDSO-G16

10.3 mm

536870912 bit

FLASH

8

1

16

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3

AEC-Q100

2.65 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

7.5 mm

GD25Q80CTIG by Gigadevice Semiconductor

GD25Q80CTIG

Gigadevice Semiconductor

GD25Q80CTIG by Gigadevice Semiconductor is an 8Mbit FLASH Memory IC with 120MHz clock frequency, operating at -40 to 85°C. It has a supply voltage range of 2.7V to 3.6V and synchronous operation mode. Ideal for industrial applications requiring high-speed data storage in compact designs.

120 MHz

R-PDSO-G8

4.9 mm

8388608 bit

FLASH

1

1

8

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX1

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3.3

1.75 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm

W25Q16JVSNJQ by Winbond Electronics

W25Q16JVSNJQ

Winbond Electronics

W25Q16JVSNJQ by Winbond Electronics is a 16Mb Flash Memory with synchronous operation, 133 MHz clock frequency, and 3V supply voltage. It is ideal for industrial applications requiring high-speed data storage in a small outline package.

1

133 MHz

R-PDSO-G8

4.85 mm

16777216 bit

FLASH

8

1

8

2097152 words

2M

SYNCHRONOUS

105 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3

1.75 mm

3.6 V

3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm

IS29GL128-70SLEB by Integrated Silicon Solution

IS29GL128-70SLEB

Integrated Silicon Solution

IS29GL128-70SLEB by Integrated Silicon Solution is a 128M Flash Memory with 134217728-bit memory density. It operates at 3V, has a max access time of 70ns, and supports asynchronous mode. Ideal for industrial applications requiring high-speed parallel memory with a small outline package design.

70 ns

R-PDSO-G56

e3

18.4 mm

134217728 bit

FLASH

1

1

56

134217728 words

128M

ASYNCHRONOUS

105 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN

GULL WING

.5 mm

DUAL

14 mm

IS25LQ040B-JNLE-TR by Integrated Silicon Solution

IS25LQ040B-JNLE-TR

Integrated Silicon Solution

IS25LQ040B-JNLE-TR by Integrated Silicon Solution is a 512Kx8 NOR Flash Memory with synchronous operation at 104 MHz clock frequency. Ideal for industrial applications, it has a memory density of 4Mb and operates within a temperature range of -40 to 105°C.

CLOCK FREQUENCY FOR READ MODE 33 MHZ

1

104 MHz

R-PDSO-G8

e3

4.9 mm

4194304 bit

FLASH

8

1

8

524288 words

512K

SYNCHRONOUS

105 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3

1.75 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN

GULL WING

1.27 mm

DUAL

30

NOR TYPE

3.9 mm