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IS25WP512M-RMLE

Integrated Silicon Solution

IS25WP512M-RMLE by Integrated Silicon Solution

IS25WP512M-RMLE by Integrated Silicon Solution is a 64MX8 NOR type Flash Memory with 133 MHz clock frequency. Operating at -40 to 105 °C, it offers 100000 Write/Erase Cycles endurance. Ideal for industrial applications requiring high-speed data storage in compact form factor.

Median Price

$9.210

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$9.210

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$9.210

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Vyrian

USA . 6,076 parts In-Stock

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6,076

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Chip Stock

USA . 334 parts In-Stock

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334

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 390 parts In-Stock

1+ parts

$5.482

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390

$5.482

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Continental Prestige Electronics

USA . 2,102 parts In-Stock

1+ parts

$9.210

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$9.026

2,102

$9.210

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$9.026

Netroflash

USA . 500 parts In-Stock

1+ parts

$9.210

100+ parts

$9.026

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$9.026

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Argo Parts USA

USA . 1,600 parts In-Stock

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1,600

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Overview

Upgrade your devices with the reliable IS25WP512M-RMLE Flash Memory by Integrated Silicon Solution. Known for their high-quality products, ISS offers a cutting-edge solution for various applications. This small outline memory chip is designed for industrial-grade use, providing 100,000 write/erase cycles and a wide operating temperature range. With a maximum clock frequency of 133 MHz and 64M words code, this NOR type memory chip is perfect for your hardware/software needs. Trust ISS to deliver top-notch performance and durability that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Nominal Supply Voltage / Vsup (V): 1.8

Optimal voltage for efficient performance and power consumption.

Maximum Operating Temperature: 105 °C

Allows the product to operate in high temperature environments without compromising performance.

Organization: 64MX8

Organized memory structure for efficient data processing and retrieval.

Minimum Operating Temperature: -40 °C

Can withstand low temperatures, making it suitable for a wide range of operating environments.

Write Protection: HARDWARE/SOFTWARE

Ensures data security by providing options for protecting data from being overwritten or altered.

Maximum Clock Frequency (fCLK): 133 MHz

High clock frequency allows for fast data access and transfer speeds.

Endurance: 100000 Write/Erase Cycles

High endurance rating ensures longevity and reliability of the product.

Technical Specifications

Flash Memory IS25WP512M-RMLE attributes and parameters. Explore more Flash Memory devices from Integrated Silicon Solution

Specs

Alternate Memory Width:

1

Maximum Clock Frequency (fCLK):

133 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e3

Length:

10.31 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

16

No. of Words:

67108864 words

No. of Words Code:

64M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64MX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

1.8

Maximum Seated Height:

2.65 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.00014 Amp

Maximum Supply Current:

35 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Type:

NOR TYPE

Width:

7.49 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

IS25WP512M-RMLE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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