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MT29F1G08ABADAH4-ITX:D

Micron Technology

MT29F1G08ABADAH4-ITX:D by Micron Technology

MT29F1G08ABADAH4-ITX:D by Micron Technology is a 3.3V SLC NAND flash memory with 128Mx8 organization, operating from -40 to 85°C. It features a 2K word page size, 128K word sector size, and parallel interface. Ideal for industrial applications requiring fast access times and low standby current.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,703 parts In-Stock

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7,703

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Cyclops Electronics Ltd

UK . 5,539 parts In-Stock

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5,539

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Chip Stock

USA . 2,999 parts In-Stock

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2,999

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Sensible Micro Corp

USA . 2,959 parts In-Stock

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2,959

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Digiode

USA . 861 parts In-Stock

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861

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

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Corohmni

South Africa . 142 parts In-Stock

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$2.508

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142

$2.508

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Ampacity Inc.

Singapore . 1,475 parts In-Stock

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$3.000

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1,475

$3.000

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Aztec Data Supply Inc.

USA . 2,471 parts In-Stock

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$3.100

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$3.100

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Advanced Electronics

New Zealand . 550 parts In-Stock

1+ parts

$5.625

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$5.119

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$4.612

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550

$5.625

$5.119

$4.612

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AZTECH Wire

Italy . 646 parts In-Stock

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$9.464

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646

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RC Electronics

USA . 84,606 parts In-Stock

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Continental Prestige Electronics

USA . 6,795 parts In-Stock

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Kepictronics

USA . 5,517 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Argo Parts USA

USA . 4,418 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,655 parts In-Stock

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Corphita

USA . 1,556 parts In-Stock

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Microchip USA

USA . 470 parts In-Stock

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470

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Bastille Electronics

Australia . 300 parts In-Stock

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300

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Overview

Experience lightning-fast data storage and retrieval with the MT29F1G08ABADAH4-ITX:D by Micron Technology. As a leader in flash memory technology, Micron offers unparalleled quality and reliability. Whether you're looking to upgrade your device's memory or enhance its performance, this flash memory chip is the perfect solution. With a wide operating temperature range and low power consumption, this chip is ideal for industrial applications. Trust Micron Technology to deliver cutting-edge memory solutions that meet your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials provide durability and reliability, making the product suitable for various environments.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent access to memory locations, enhancing efficiency and performance.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V ensures compatibility with a wide range of systems while maintaining power efficiency.

Temperature Grade: INDUSTRIAL

With an industrial temperature grade, the product can withstand harsh operating conditions and extended temperature ranges.

Memory IC Type: FLASH

Being a flash memory IC ensures fast data access, high reliability, and low power consumption, making it ideal for various applications.

Technical Specifications

Flash Memory MT29F1G08ABADAH4-ITX:D attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

25 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B63

JESD-609 Code:

e1

Length:

11 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

1K

No. of Terminals:

63

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA63,10X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Page Size (words):

2K

Parallel or Serial:

PARALLEL

Power Supplies (V):

3.3

Programming Voltage (V):

3.3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1 mm

Sector Size (Words):

128K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

35 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

SLC NAND TYPE

Width:

9 mm

Trade Compliance

MT29F1G08ABADAH4-ITX:D Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.1.A

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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