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IS25WP256E-JLLE

Integrated Silicon Solution

IS25WP256E-JLLE by Integrated Silicon Solution

IS25WP256E-JLLE by Integrated Silicon Solution is a 32MX8 flash memory IC with 268Mbit density. It operates at 166MHz clock frequency, with a supply voltage range of 1.65V to 1.95V. Ideal for industrial applications requiring high-speed synchronous operation in a compact package style.

Median Price

$5.260

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 873 parts In-Stock

1+ parts

$5.260

100+ parts

$4.530

1k+ parts

-

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873

$5.260

$4.530

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Distributors (In-Stock)

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$3.972

100+ parts

-

1k+ parts

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50

$3.972

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Vyrian

USA . 44 parts In-Stock

1+ parts

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44

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Distributors (Availability)

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Argo Parts USA

USA . 4,013 parts In-Stock

1+ parts

$3.919

100+ parts

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4,013

$3.919

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Continental Prestige Electronics

USA . 282 parts In-Stock

1+ parts

$3.919

100+ parts

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1k+ parts

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10k+ parts

$3.840

282

$3.919

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$3.840

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$3.972

100+ parts

-

1k+ parts

$3.773

10k+ parts

$3.694

1,000

$3.972

-

$3.773

$3.694

AZTECH Wire

Italy . 249 parts In-Stock

1+ parts

$18.795

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249

$18.795

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Perfect Parts

USA . 1,045 parts In-Stock

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1,045

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Overview

Upgrade your devices with the high-quality IS25WP256E-JLLE Flash Memory from Integrated Silicon Solution. Designed for industrial-grade applications, this memory chip offers fast and reliable performance with a maximum clock frequency of 166 MHz. With a small outline package and very thin profile, this flash memory is easy to integrate into your projects. Trust in the reputation of ISSI as a leading manufacturer in the industry, and experience the value and benefits that this product brings to your electronic designs. Elevate your products with the IS25WP256E-JLLE and enjoy enhanced performance and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the flash memory, making it a reliable choice for storage.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a low supply voltage of 1.8V helps in reducing power consumption and heat generation, making it energy-efficient.

Maximum Operating Temperature: 105 °C

With the ability to operate at high temperatures, this flash memory can withstand challenging environments and ensure stable performance.

Organization: 32MX8

The organized structure of 32 million words with 8 bits each ensures efficient data storage and retrieval capabilities.

Technology: CMOS

CMOS technology offers low power consumption, high speed, and reliability, making this flash memory suitable for various applications.

Technical Specifications

Flash Memory IS25WP256E-JLLE attributes and parameters. Explore more Flash Memory devices from Integrated Silicon Solution

Specs

Alternate Memory Width:

1

Maximum Clock Frequency (fCLK):

166 MHz

JESD-30 Code:

R-PDSO-N8

Length:

8 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

33554432 words

No. of Words Code:

32M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Programming Voltage (V):

1.8

Maximum Seated Height:

.8 mm

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

6 mm

Trade Compliance

IS25WP256E-JLLE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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