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IS29GL128-70SLEB

Integrated Silicon Solution

IS29GL128-70SLEB by Integrated Silicon Solution

IS29GL128-70SLEB by Integrated Silicon Solution is a 128M Flash Memory with 134217728-bit memory density. It operates at 3V, has a max access time of 70ns, and supports asynchronous mode. Ideal for industrial applications requiring high-speed parallel memory with a small outline package design.

Median Price

$12.120

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 127 parts In-Stock

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Nova Conductors

Japan . 95 parts In-Stock

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$4.936

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Vyrian

USA . 11,119 parts In-Stock

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GLYN GmbH & Co. KG

Germany . 20 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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$4.837

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$4.644

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Continental Prestige Electronics

USA . 2,014 parts In-Stock

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$4.936

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AZTECH Wire

Italy . 216 parts In-Stock

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Perfect Parts

USA . 4,708 parts In-Stock

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Argo Parts USA

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Overview

Looking for reliable and high-quality Flash Memory solutions? Look no further than the IS29GL128-70SLEB by Integrated Silicon Solution. With a focus on excellence and innovation, ISS is a trusted name in the industry, offering cutting-edge products like this one that are perfect for a wide range of applications. From industrial to consumer electronics, this flash memory device delivers exceptional performance and reliability, ensuring seamless operation for your devices. Experience the value and benefits of ISS products today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the flash memory, making it a reliable choice for long-term use.

Surface Mount: YES

With surface mount capability, this flash memory can easily be integrated into a variety of electronic devices, saving space and simplifying the assembly process.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient placement within a circuit board, optimizing the use of space in electronic devices.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode ensures fast and efficient data transfer, making this flash memory ideal for high-performance applications.

Nominal Supply Voltage (Vsup): 3V

The 3V supply voltage ensures compatibility with a wide range of electronic systems, offering flexibility in design and integration.

No. of Terminals: 56

With 56 terminals, this flash memory provides ample connectivity options, allowing for versatile usage in various electronic devices.

Package Style: SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The compact and thin profile design with a shrink pitch allows for easy integration and space-saving in compact electronic devices.

Maximum Operating Temperature: 105 °C

The high operating temperature range makes this flash memory suitable for use in a variety of environments, ensuring reliability and performance under different conditions.

Organization: 128MX1

The 128MX1 organization offers high storage capacity and efficient data organization, making this flash memory ideal for storing large amounts of data.

Minimum Operating Temperature: -40 °C

With a low minimum operating temperature, this flash memory can withstand extreme cold conditions, making it suitable for a wide range of applications.

Terminal Finish: TIN

The terminal finish of TIN provides corrosion resistance and ensures reliable electrical connections, enhancing the longevity and performance of the flash memory.

Terminal Position: DUAL

The dual terminal position design offers flexibility in installation and connectivity, allowing for versatile usage in various electronic systems.

Maximum Seated Height: 1.2 mm

The low seated height ensures compatibility with slim devices, making this flash memory ideal for compact electronic designs.

Width: 14 mm

The 14mm width of this flash memory allows for easy integration into circuit boards and electronic devices, enabling efficient use of space.

Minimum Supply Voltage (Vsup): 2.7V

The minimum supply voltage of 2.7V provides a range of power options, making this flash memory suitable for different power requirements in electronic systems.

Length: 18.4 mm

The 18.4mm length of this flash memory offers a compact form factor, allowing for easy installation and space-saving in electronic devices.

Programming Voltage (V): 3V

The 3V programming voltage ensures compatibility with standard programming interfaces, making it easy to integrate and program this flash memory.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures reliability and performance in harsh operating conditions, making this flash memory suitable for industrial applications.

Technology: CMOS

The CMOS technology used in this flash memory offers low power consumption and high performance, making it an energy-efficient choice for electronic devices.

Parallel or Serial: PARALLEL

The parallel data transfer mode allows for fast and efficient data access, making this flash memory ideal for high-speed applications.

Terminal Form: GULL WING

The gull wing terminal form provides secure connections and ease of soldering, ensuring reliable electrical contact in electronic systems.

No. of Words: 134217728 words

With a high number of words, this flash memory offers ample storage capacity for storing large amounts of data efficiently.

Terminal Pitch: 0.5 mm

The 0.5mm terminal pitch provides fine pitch connectivity, enabling high-density integration and compact design in electronic systems.

No. of Words Code: 128M

The 128M words code offers efficient data organization and storage capacity, making this flash memory suitable for applications requiring large data storage.

Maximum Supply Voltage (Vsup): 3.6V

The maximum supply voltage of 3.6V ensures compatibility with standard power sources and offers a safety margin for voltage fluctuations, ensuring reliable operation.

Memory Density: 134217728 bit

With a high memory density, this flash memory offers ample storage capacity for data-intensive applications, making it a reliable choice for storing large amounts of data.

Memory IC Type: FLASH

The flash memory IC type offers non-volatile storage capabilities, ensuring data retention even when power is removed, making it ideal for data storage applications.

Maximum Access Time: 70 ns

The 70ns maximum access time provides fast data retrieval, making this flash memory suitable for high-speed applications requiring quick data access.

Technical Specifications

Flash Memory IS29GL128-70SLEB attributes and parameters. Explore more Flash Memory devices from Integrated Silicon Solution

Specs

Maximum Access Time:

70 ns

JESD-30 Code:

R-PDSO-G56

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

56

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128MX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Programming Voltage (V):

3

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

14 mm

Trade Compliance

IS29GL128-70SLEB Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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