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IS29GL128-70SLA3H

Integrated Silicon Solution

IS29GL128-70SLA3H by Integrated Silicon Solution

IS29GL128-70SLA3H by Integrated Silicon Solution is a 128M Flash Memory with 134217728-bit memory density. Operating at 70ns access time, it supports a supply voltage range of 2.7V to 3.6V and is ideal for automotive applications due to AEC-Q100 screening level compliance.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

< 1k

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Vyrian

USA . 441 parts In-Stock

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Nova Conductors

Japan . 37 parts In-Stock

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AZTECH Wire

Italy . 441 parts In-Stock

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$13.361

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Continental Prestige Electronics

USA . 3,938 parts In-Stock

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Bastille Electronics

Australia . 900 parts In-Stock

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Argo Parts USA

USA . 807 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the IS29GL128-70SLA3H by Integrated Silicon Solution. As a leading manufacturer in the industry, ISS delivers top-quality Flash Memory solutions that are ideal for automotive applications, boasting a wide operating temperature range and superior performance. Experience lightning-fast data access and reliable storage capabilities with this innovative product, designed to meet the demands of today's digital world. Upgrade your systems with the IS29GL128-70SLA3H and enjoy seamless operation and unmatched efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the flash memory, making it suitable for various environmental conditions.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for faster data transfer and processing, enhancing the overall performance of the flash memory.

Nominal Supply Voltage: 3V

The 3V nominal supply voltage ensures compatibility with a wide range of systems and devices, making it a versatile choice for different applications.

Maximum Operating Temperature: 125°C

The high maximum operating temperature makes this flash memory suitable for automotive and industrial applications where temperature extremes are common.

Memory Density: 134217728 bit

With a high memory density of 134217728 bits, this flash memory can store a large amount of data efficiently and effectively.

Technical Specifications

Flash Memory IS29GL128-70SLA3H attributes and parameters. Explore more Flash Memory devices from Integrated Silicon Solution

Specs

Maximum Access Time:

70 ns

JESD-30 Code:

R-PDSO-G56

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

56

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128MX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Programming Voltage (V):

3

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

14 mm

Trade Compliance

IS29GL128-70SLA3H Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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