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IS29GL128-70SLA3B

Integrated Silicon Solution

IS29GL128-70SLA3B by Integrated Silicon Solution

IS29GL128-70SLA3B by Integrated Silicon Solution is a 128M Flash Memory with 134217728-bit memory density. Operating at 3V, it offers fast access time of 70ns for automotive applications. This small outline package has dual terminals and operates in asynchronous mode.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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EBV Elektronik

Germany . 768 parts In-Stock

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Vyrian

USA . 388 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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AZTECH Wire

Italy . 388 parts In-Stock

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$13.454

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Continental Prestige Electronics

USA . 5,227 parts In-Stock

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Argo Parts USA

USA . 2,841 parts In-Stock

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Bastille Electronics

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Overview

Unlock the power of reliable and high-quality flash memory with the IS29GL128-70SLA3B from Integrated Silicon Solution. Perfect for automotive applications, this flash memory offers a seamless and efficient user experience with its fast access time and durable design. Say goodbye to data loss and hello to peace of mind with the trusted technology of Integrated Silicon Solution. Choose quality, choose reliability, choose IS29GL128-70SLA3B.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the flash memory, ensuring it can withstand various environmental conditions.

Surface Mount: YES

Allows for easy installation and integration into electronic devices without the need for additional hardware.

Operating Mode: ASYNCHRONOUS

Enables faster data transfer speeds and efficient performance during read and write operations.

Nominal Supply Voltage / Vsup (V): 3

Optimal voltage supply for reliable operation and data retention in the flash memory.

Maximum Operating Temperature: 125 °C

Can operate at high temperatures without compromising performance, making it suitable for automotive and industrial applications.

Technology: CMOS

CMOS technology ensures low power consumption and high noise immunity, improving the overall efficiency of the flash memory.

Memory IC Type: FLASH

Flash memory offers non-volatile storage, allowing data to be retained even when power is removed, making it ideal for storing critical information.

Technical Specifications

Flash Memory IS29GL128-70SLA3B attributes and parameters. Explore more Flash Memory devices from Integrated Silicon Solution

Specs

Maximum Access Time:

70 ns

JESD-30 Code:

R-PDSO-G56

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

56

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128MX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Programming Voltage (V):

3

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

14 mm

Trade Compliance

IS29GL128-70SLA3B Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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