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IS29GL128-70SLEH

Integrated Silicon Solution

IS29GL128-70SLEH by Integrated Silicon Solution

IS29GL128-70SLEH by Integrated Silicon Solution is a 128MX1 Flash Memory with a max access time of 70 ns. It operates in an asynchronous mode and has a memory density of 134217728 bits. This memory IC type is commonly used in industrial applications requiring fast and reliable data storage.

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Overview

Discover the cutting-edge IS29GL128-70SLEH Flash Memory by Integrated Silicon Solution. As a leading manufacturer in the industry, Integrated Silicon Solution delivers top-notch quality and reliability. This versatile product offers endless possibilities in applications such as data storage, embedded systems, and automotive electronics. With its compact design and high performance, the IS29GL128-70SLEH provides unbeatable value and benefits to customers. Say goodbye to slow access times and hello to seamless multitasking. Upgrade your devices with this innovative flash memory solution and experience enhanced efficiency and productivity like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This product's plastic/epoxy package body material ensures durability and protection, making it a reliable choice for flash memory storage.

Surface Mount: YES

With surface mount capabilities, this flash memory product provides ease of installation and integration into various electronic devices.

No. of Functions: 1

With a single function, this flash memory product simplifies the design and operation, enhancing its efficiency and reliability.

Package Shape: RECTANGULAR

The rectangular package shape of this flash memory allows for compact integration and space-saving designs, making it suitable for compact electronic devices.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode of this flash memory offers flexibility and compatibility with various systems, ensuring smooth and efficient data transfers.

Nominal Supply Voltage / Vsup (V): 3

The 3V nominal supply voltage of this flash memory ensures low power consumption and compatibility with a wide range of electronic devices.

No. of Terminals: 56

With 56 terminals, this flash memory provides ample connectivity options, enabling seamless integration and efficient data transfer in complex systems.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The small outline, thin profile, and shrink pitch package style of this flash memory contribute to its compact design, making it suitable for space-constrained applications.

Maximum Operating Temperature: 105 °C

With a high maximum operating temperature of 105°C, this flash memory can withstand demanding environmental conditions, ensuring reliability and durability.

Organization: 128MX1

The 128MX1 organization of this flash memory product allows for efficient storage and retrieval of large amounts of data, making it ideal for high-capacity applications.

Minimum Operating Temperature: -40 °C

The flash memory's minimum operating temperature of -40°C ensures reliable performance even in extreme cold environments, making it suitable for various applications.

Terminal Finish: TIN

The terminal finish of tin provides excellent conductivity and corrosion resistance, ensuring reliable and long-lasting connectivity for this flash memory product.

Terminal Position: DUAL

With dual terminal positions, this flash memory provides options for flexible installation and connectivity in different electronic systems.

Maximum Seated Height: 1.2 mm

The flash memory's maximum seated height of 1.2mm allows for slim and compact designs, making it suitable for space-constrained electronic devices.

Width: 14 mm

With a width of 14mm, this flash memory offers a compact size, allowing for easy integration into various electronic devices with limited space.

Minimum Supply Voltage (Vsup): 2.7 V

The minimum supply voltage of 2.7V ensures compatibility with low-power applications, offering energy efficiency and extended battery life.

Length: 18.4 mm

With a length of 18.4mm, this flash memory product provides a compact form factor, allowing for versatile integration into different electronic systems.

Programming Voltage (V): 3

The programming voltage of 3V ensures compatibility and ease of use in programming operations for this flash memory device.

Temperature Grade: INDUSTRIAL

With an industrial temperature grade, this flash memory can operate reliably in harsh industrial environments, making it suitable for industrial applications.

Technology: CMOS

The CMOS technology used in this flash memory ensures low power consumption, high performance, and compatibility with a wide range of electronic devices.

Parallel or Serial: PARALLEL

Operating in parallel mode, this flash memory enables faster data transfer rates, making it suitable for applications requiring high-speed data processing.

Terminal Form: GULL WING

The gull wing terminal form of this flash memory provides secure and reliable solder connections, ensuring the longevity and robustness of the product.

No. of Words: 134217728 words

With a large number of words (134,217,728), this flash memory offers ample storage capacity, suitable for applications that require extensive data storage.

Memory Width: 1

The flash memory's memory width of 1 bit allows for precise data storage and retrieval, making it suitable for applications requiring fine-grained memory access.

Terminal Pitch: 0.5 mm

With a terminal pitch of 0.5mm, this flash memory provides precise and compact connectivity options, facilitating efficient integration with electronic circuits.

No. of Words Code: 128M

The 128M code represents the large number of words (128 million) that this flash memory can store, making it ideal for applications requiring extensive data storage.

Maximum Supply Voltage (Vsup): 3.6 V

With a maximum supply voltage of 3.6V, this flash memory ensures compatibility with a wide range of electronic systems, allowing for versatile integration.

Memory Density: 134217728 bit

The flash memory's high memory density of 134,217,728 bits provides ample storage space, making it suitable for applications that require large data storage.

Memory IC Type: FLASH

Being a flash memory IC type, this product offers non-volatile and rewritable memory storage, making it ideal for applications that require data persistence.

Maximum Access Time: 70 ns

With a maximum access time of 70ns, this flash memory offers fast read and write speeds, enabling efficient data processing and retrieval.

Technical Specifications

Flash Memory IS29GL128-70SLEH attributes and parameters. Explore more Flash Memory devices from Integrated Silicon Solution

Specs

Maximum Access Time:

70 ns

JESD-30 Code:

R-PDSO-G56

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

56

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128MX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Programming Voltage (V):

3

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

14 mm

Trade Compliance

IS29GL128-70SLEH Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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