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IS29GL128-70DLET

Integrated Silicon Solution

IS29GL128-70DLET by Integrated Silicon Solution

IS29GL128-70DLET by Integrated Silicon Solution is a 128M Flash Memory with 134217728-bit memory density. It operates at an access time of 70ns, suitable for industrial applications requiring high-speed data storage and retrieval. With a package style of Grid Array and low profile design, it offers parallel operation with a supply voltage range of 2.7V to 3.6V.

Median Price

$5.740

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 146 parts In-Stock

1+ parts

$5.740

100+ parts

$4.976

1k+ parts

$4.652

10k+ parts

$4.534

146

$5.740

$4.976

$4.652

$4.534

Mouser Electronics

USA . 511 parts In-Stock

1+ parts

$11.800

100+ parts

$9.920

1k+ parts

-

10k+ parts

-

511

$11.800

$9.920

-

-

Newark

USA . 3,849 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$4.770

10k+ parts

-

3,849

-

-

$4.770

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ComSIT Distribution GmbH

Germany . 7 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,000

-

-

-

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Perfect Parts

USA . 6 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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6

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Overview

Unlock the power of seamless data storage and retrieval with the IS29GL128-70DLET by Integrated Silicon Solution. This cutting-edge Flash Memory solution offers unparalleled reliability and performance, making it ideal for a wide range of industrial applications. With a compact square package design and low profile style, this memory IC boasts a high memory density of 134217728 bits, ensuring efficient data storage. Say goodbye to slow access times and hello to faster processing speeds with the IS29GL128-70DLET. Experience the difference in quality and efficiency that only ISS can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for protection and easy handling.

Surface Mount: YES

Allows for easy and secure installation on compatible devices.

Operating Mode: ASYNCHRONOUS

Enables efficient and independent operation without requiring synchronization.

Nominal Supply Voltage: 3V

Works efficiently within standard voltage range for reliable performance.

Technology: CMOS

Utilizes low power consumption and high noise immunity for efficient operation.

Memory IC Type: FLASH

Offers fast read and write speeds for storing and retrieving data quickly.

Technical Specifications

Flash Memory IS29GL128-70DLET attributes and parameters. Explore more Flash Memory devices from Integrated Silicon Solution

Specs

Maximum Access Time:

70 ns

JESD-30 Code:

S-PBGA-B64

JESD-609 Code:

e3

Length:

9 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

64

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128MX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE

Parallel or Serial:

PARALLEL

Programming Voltage (V):

3

Maximum Seated Height:

1.4 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Width:

9 mm

Trade Compliance

IS29GL128-70DLET Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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