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RECTANGULAR Flash Memory 1,448

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
MT28EW256ABA1LPC-1SIT by Micron Technology

MT28EW256ABA1LPC-1SIT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, LOW PROFILE;

70 ns

8

R-PBGA-B64

13 mm

268435456 bit

FLASH

16

1

64

16777216 words

16M

ASYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

NOT SPECIFIED

3

1.4 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

11 mm

MT28EW256ABA1LPN-0SIT by Micron Technology

MT28EW256ABA1LPN-0SIT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: VFBGA; Package Shape: RECTANGULAR; Technology: CMOS;

70 ns

8

R-PBGA-B56

9 mm

268435456 bit

FLASH

16

1

56

16777216 words

16M

ASYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

7 mm

MT28EW512ABA1HPN-0SIT by Micron Technology

MT28EW512ABA1HPN-0SIT

Micron Technology

MT28EW512ABA1HPN-0SIT by Micron Technology is a 32MX16 flash memory IC with 33554432 words. It operates at 3V, has a very thin profile, and offers a max access time of 95ns. Ideal for industrial applications requiring high-density parallel memory solutions.

95 ns

8

R-PBGA-B56

9 mm

536870912 bit

FLASH

16

1

56

33554432 words

32M

ASYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

7 mm

MT28EW512ABA1LPN-0SIT by Micron Technology

MT28EW512ABA1LPN-0SIT

Micron Technology

Micron Technology's MT28EW512ABA1LPN-0SIT is a Flash Memory with 32MX16 organization, 8-bit width, and 33554432 words. Operating at -40 to 85 °C, it has a very thin profile package style suitable for industrial applications requiring fast access times of up to 95 ns.

95 ns

8

R-PBGA-B56

9 mm

536870912 bit

FLASH

16

1

56

33554432 words

32M

ASYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

7 mm

MT29F2G08ABAEAH4-AATX:E by Micron Technology

MT29F2G08ABAEAH4-AATX:E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Words Code: 256M;

R-PBGA-B63

11 mm

2147483648 bit

FLASH

8

1

63

268435456 words

256M

ASYNCHRONOUS

105 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

MT29F2G08ABAEAWP-AATX:E by Micron Technology

MT29F2G08ABAEAWP-AATX:E

Micron Technology

Micron Technology's MT29F2G08ABAEAWP-AATX:E is a 256MX8 SLC NAND flash memory with 2K sectors. Operating at 3.3V, it offers fast access time of 25ns and industrial temperature grade. With a package style of GRID ARRAY, it is suitable for applications requiring high-speed data storage in harsh environments.

25 ns

YES

NO

R-PBGA-B63

e3

11 mm

2147483648 bit

FLASH

8

1

2K

63

268435456 words

256M

ASYNCHRONOUS

105 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

VFBGA

TSSOP48,.8,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

260

3/3.3

3.3

Not Qualified

YES

AEC-Q100

1 mm

128K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

SST26WF064C-104I/MF by Microchip Technology

SST26WF064C-104I/MF

Microchip Technology

SST26WF064C-104I/MF by Microchip Technology is a 64MX1 NOR flash memory with 104 MHz clock frequency. Operating at 1.8V, it offers 100000 write/erase cycles and SPI serial bus interface. Ideal for industrial applications requiring high endurance and fast data transfer in a compact package.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-N8

e3

6 mm

67108864 bit

FLASH

1

1

1

8

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX1

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

1.8

TS 16949

.8 mm

SPI

.000015 Amp

25 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

1.27 mm

DUAL

NOR TYPE

5 mm

HARDWARE/SOFTWARE

SST26WF064C-104I/SM by Microchip Technology

SST26WF064C-104I/SM

Microchip Technology

SST26WF064C-104I/SM by Microchip: NOR Flash Memory, 64MX1 organization, 104 MHz clock frequency. Ideal for industrial applications requiring high-speed synchronous operation and 100000 write/erase cycles.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-G8

e3

5.26 mm

67108864 bit

FLASH

1

1

1

8

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

1.8

TS 16949

2.03 mm

SPI

.000015 Amp

25 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

NOR TYPE

5.25 mm

HARDWARE/SOFTWARE

RC28F128P30BF65A by Micron Technology

RC28F128P30BF65A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Length: 13 mm;

65 ns

BOTTOM BOOT; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

BOTTOM

YES

YES

NO

R-PBGA-B64

13 mm

134217728 bit

FLASH

16

1

4,127

64

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

8

PARALLEL

NOT SPECIFIED

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.000055 Amp

Flash Memories

50 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NO

NOR TYPE

10 mm

MTFDDAK060MBD-2AH12ITYY by Micron Technology

MTFDDAK060MBD-2AH12ITYY

Micron Technology

FLASH MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 22; Package Shape: RECTANGULAR; Memory Width: 8; No. of Functions: 1;

R-XSMA-N22

100.45 mm

515396075520 bit

FLASH MODULE

8

1

22

128849018880 words

60G

ASYNCHRONOUS

85 Cel

-40 Cel

60GX8

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

SERIAL

5

7.2 mm

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

NO LEAD

SINGLE

MLC NAND TYPE

69.85 mm

MTFDDAK120MBD-2AK12ITYY by Micron Technology

MTFDDAK120MBD-2AK12ITYY

Micron Technology

FLASH MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 22; Package Shape: RECTANGULAR; Width: 69.85 mm; Minimum Operating Temperature: -40 Cel;

R-XSMA-N22

100.45 mm

1030792151040 bit

FLASH MODULE

8

1

22

128849018880 words

120G

ASYNCHRONOUS

85 Cel

-40 Cel

120GX8

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

SERIAL

5

7.2 mm

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

NO LEAD

SINGLE

MLC NAND TYPE

69.85 mm

MTFDDAK128MBD-1AK12ITYY by Micron Technology

MTFDDAK128MBD-1AK12ITYY

Micron Technology

FLASH MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 22; Package Shape: RECTANGULAR; Type: MLC NAND TYPE; Surface Mount: NO;

R-XSMA-N22

100.45 mm

1099511627776 bit

FLASH MODULE

8

1

22

137438953472 words

128G

ASYNCHRONOUS

85 Cel

-40 Cel

128GX8

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

SERIAL

5

7.2 mm

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

NO LEAD

SINGLE

MLC NAND TYPE

69.85 mm

MTFDDAK240MBD-2AK12ITYY by Micron Technology

MTFDDAK240MBD-2AK12ITYY

Micron Technology

Micron Technology's MTFDDAK240MBD-2AK12ITYY is a 240GX8 MLC NAND flash module with 2061584302080 bit memory density. Operating at 5V, it has an industrial temperature grade and serial interface. Ideal for applications requiring high-speed data storage in compact microelectronic assemblies.

R-XSMA-N22

100.45 mm

2061584302080 bit

FLASH MODULE

8

1

22

257698037760 words

240G

ASYNCHRONOUS

85 Cel

-40 Cel

240GX8

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

SERIAL

5

7.2 mm

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

NO LEAD

SINGLE

MLC NAND TYPE

69.85 mm

MTFDDAK256MBD-1AK12ITYY by Micron Technology

MTFDDAK256MBD-1AK12ITYY

Micron Technology

FLASH MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 22; Package Shape: RECTANGULAR; Type: MLC NAND TYPE; Technology: CMOS;

R-XSMA-N22

100.45 mm

2199023255552 bit

FLASH MODULE

8

1

22

274877906944 words

256G

ASYNCHRONOUS

85 Cel

-40 Cel

256GX8

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

SERIAL

5

7.2 mm

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

NO LEAD

SINGLE

MLC NAND TYPE

69.85 mm

MT28FW02GBBA1LPC-0AAT by Micron Technology

MT28FW02GBBA1LPC-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Length: 13 mm;

105 ns

R-PBGA-B64

13 mm

2147483648 bit

FLASH

16

1

64

134217728 words

128M

ASYNCHRONOUS

105 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

NOT SPECIFIED

3

AEC-Q100

1.4 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

11 mm

MT29F2G08ABBEAH4:ETR by Micron Technology

MT29F2G08ABBEAH4:ETR

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;

R-PBGA-B63

e1

11 mm

2147483648 bit

FLASH

8

1

63

268435456 words

256M

ASYNCHRONOUS

70 Cel

0 Cel

256MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

MT29F2G16ABDHC:DTR by Micron Technology

MT29F2G16ABDHC:DTR

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

R-PBGA-B63

e1

13 mm

2147483648 bit

FLASH

16

1

63

134217728 words

128M

ASYNCHRONOUS

70 Cel

0 Cel

128MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.65 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

10.5 mm

MTFDDAK032SBD-1AH12ITYY by Micron Technology

MTFDDAK032SBD-1AH12ITYY

Micron Technology

FLASH MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 22; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel; Memory Width: 8;

LENGTH_MAX

R-XSMA-X22

100.45 mm

274877906944 bit

FLASH MODULE

8

1

22

34359738368 words

32G

85 Cel

-40 Cel

32GX8

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

NOT SPECIFIED

5

7.2 mm

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

UNSPECIFIED

SINGLE

NOT SPECIFIED

SLC NAND TYPE

69.85 mm

MTFDDAT064SBD-1AK12ITYY by Micron Technology

MTFDDAT064SBD-1AK12ITYY

Micron Technology

FLASH MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 52; Package Code: DIMM; Package Shape: RECTANGULAR; Length: 50.8 mm;

R-XDMA-N52

50.8 mm

549755813888 bit

FLASH MODULE

8

1

52

68719476736 words

64G

ASYNCHRONOUS

85 Cel

-40 Cel

64GX8

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

SERIAL

3.3

2.4 mm

3.46 V

3.14 V

3.3

NO

CMOS

INDUSTRIAL

NO LEAD

DUAL

SLC NAND TYPE

29.85 mm

IS25LQ040B-JKLE-TR by Integrated Silicon Solution

IS25LQ040B-JKLE-TR

Integrated Silicon Solution

IS25LQ040B-JKLE-TR by Integrated Silicon Solution is a 4Mbit Flash Memory with synchronous operation at up to 104MHz. It features a small outline package, operates in industrial temperature range (-40°C to 105°C), and has a supply voltage of 2.3V to 3.6V. Ideal for applications requiring high-speed data storage in compact electronic devices.

104 MHz

R-PDSO-N8

6 mm

4194304 bit

FLASH

1

1

8

4194304 words

4M

SYNCHRONOUS

105 Cel

-40 Cel

4MX1

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

3

.8 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

5 mm

MT29F1G08ABADAWP-IT:DTR by Micron Technology

MT29F1G08ABADAWP-IT:DTR

Micron Technology

Micron Technology's MT29F1G08ABADAWP-IT:DTR is a 128MX8 SLC NAND flash memory with 1073741824-bit density. Operating at 3.3V, it has an industrial temperature grade and supports parallel mode. With a compact form factor of 18.4mm x 12mm x 1.2mm, it is ideal for high-performance embedded applications requiring reliable non-volatile storage.

R-PDSO-G48

e3

18.4 mm

1073741824 bit

FLASH

8

1

48

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Tin (Sn)

GULL WING

.5 mm

DUAL

30

SLC NAND TYPE

12 mm

MT29F1G08ABADAWP-ITX:DTR by Micron Technology

MT29F1G08ABADAWP-ITX:DTR

Micron Technology

Micron Technology's MT29F1G08ABADAWP-ITX:DTR is a 128MX8 SLC NAND flash memory with 1073741824 bit density. Operating at 3.3V, it has an industrial temperature grade and supports asynchronous mode. This rectangular package with 48 terminals is suitable for various applications requiring high-speed parallel memory access.

R-PDSO-G48

e3

18.4 mm

1073741824 bit

FLASH

8

1

48

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

SLC NAND TYPE

12 mm

MT29F2G08AADWP:DTR by Micron Technology

MT29F2G08AADWP:DTR

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Type: SLC NAND TYPE;

R-PDSO-G48

e3

18.4 mm

2147483648 bit

FLASH

8

1

48

268435456 words

256M

ASYNCHRONOUS

70 Cel

0 Cel

256MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

SLC NAND TYPE

12 mm

MT29F2G16ABDHC-ET:DTR by Micron Technology

MT29F2G16ABDHC-ET:DTR

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.65 V;

R-PBGA-B63

e1

13 mm

2147483648 bit

FLASH

16

1

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

10.5 mm

MT29F4G01AAADDHC-ITX:DTR by Micron Technology

MT29F4G01AAADDHC-ITX:DTR

Micron Technology

Micron Technology's MT29F4G01AAADDHC-ITX:DTR is a 3.3V SLC NAND Flash Memory with 4294967296-bit density, operating at up to 50MHz clock frequency. Ideal for industrial applications, it features a very thin profile grid array package and operates in synchronous mode.

50 MHz

R-PBGA-B63

e1

13 mm

4294967296 bit

FLASH

1

1

63

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX1

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

10.5 mm

M25P40-VMN6TPBATR by Micron Technology

M25P40-VMN6TPBATR

Micron Technology

Micron Technology's M25P40-VMN6TPBATR is a NOR type Flash Memory with 512Kx8 organization, operating at 50 MHz clock frequency. It has a supply voltage range of 2.3V to 3.6V and is suitable for industrial temperature grade applications. The memory density is 4Mb, making it ideal for high-performance serial data storage solutions.

50 MHz

R-PDSO-G8

4.9 mm

4194304 bit

FLASH

8

1

8

524288 words

512K

SYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3

1.75 mm

3.6 V

2.3 V

2.7

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

30

NOR TYPE

3.9 mm

MT29F16G08ABACAWP-ITZ:CTR by Micron Technology

MT29F16G08ABACAWP-ITZ:CTR

Micron Technology

Micron Technology's MT29F16G08ABACAWP-ITZ:CTR is a 3.3V SLC NAND Flash Memory with 2GX8 organization, operating from -40 to 85 °C. It features a small outline package, parallel interface, and industrial temperature grade suitable for embedded systems and data storage applications.

R-PDSO-G48

e3

18.4 mm

17179869184 bit

FLASH

8

1

48

2147483648 words

2G

ASYNCHRONOUS

85 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

SLC NAND TYPE

12 mm

MT29F1G01AAADDH4-IT:DTR by Micron Technology

MT29F1G01AAADDH4-IT:DTR

Micron Technology

Micron Technology's MT29F1G01AAADDH4-IT:DTR is a 3.3V SLC NAND Flash Memory with 1073741824-bit memory density. Operating at up to 50MHz, it features a very thin profile grid array package and is suitable for industrial applications requiring high-speed synchronous operation.

50 MHz

R-PBGA-B63

e1

11 mm

1073741824 bit

FLASH

1

1

63

1073741824 words

1G

SYNCHRONOUS

85 Cel

-40 Cel

1GX1

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

MT29F1G08ABADAH4:DTR by Micron Technology

MT29F1G08ABADAH4:DTR

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3.3;

R-PBGA-B63

e1

11 mm

1073741824 bit

FLASH

8

1

63

134217728 words

128M

ASYNCHRONOUS

70 Cel

0 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

MT29F2G08ABAEAWP-ITX:ETR by Micron Technology

MT29F2G08ABAEAWP-ITX:ETR

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Technology: CMOS;

R-PDSO-G48

e3

18.4 mm

2147483648 bit

FLASH

8

1

48

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

30

SLC NAND TYPE

12 mm

N25Q128A23BSF40E by Micron Technology

N25Q128A23BSF40E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 108 MHz;

BOTTOM

108 MHz

R-PDSO-G16

10.3 mm

134217728 bit

FLASH

8

1

16

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3

2.65 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

30

NOR TYPE

7.5 mm

MT29F2G08ABAEAH4-ITX:ETR by Micron Technology

MT29F2G08ABAEAH4-ITX:ETR

Micron Technology

Micron Technology's MT29F2G08ABAEAH4-ITX:ETR is a 256MX8 SLC NAND flash memory with 2147483648-bit density. Operating at 3.3V, it offers industrial-grade temperature range of -40 to 85 °C. Suitable for applications requiring high-speed parallel memory access in compact devices.

R-PBGA-B63

e1

11 mm

2147483648 bit

FLASH

8

1

63

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

MTFC16GAKAECN-4MIT by Micron Technology

MTFC16GAKAECN-4MIT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Pitch: .5 mm;

R-PBGA-B153

e1

13 mm

137438953472 bit

FLASH CARD

8

1

153

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

2.7

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

MLC NAND TYPE

11.5 mm

MTFC16GAKAENA-4MIT by Micron Technology

MTFC16GAKAENA-4MIT

Micron Technology

Micron Technology's MTFC16GAKAENA-4MIT is a 16GX8 flash memory with 17179869184 words capacity. Operating in synchronous mode, it has a temperature range of -40 to 85 °C and supports parallel programming. With a compact rectangular shape and thin profile, it is ideal for industrial applications requiring high memory density and fast data access.

R-PBGA-B100

e1

18 mm

137438953472 bit

FLASH CARD

8

3

1

100

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

14 mm

MTFC32GAKAENA-4MIT by Micron Technology

MTFC32GAKAENA-4MIT

Micron Technology

Micron Technology's MTFC32GAKAENA-4MIT is a 32GX8 flash memory with 274877906944 bit density. Operating in synchronous mode, it has a temperature range of -40 to 85 °C and supports parallel programming. With a compact rectangular shape and thin profile, this flash card is ideal for industrial applications requiring high-speed data storage.

R-PBGA-B100

e1

18 mm

274877906944 bit

FLASH CARD

8

1

100

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

14 mm

MTFC64GAKAEEY-4MIT by Micron Technology

MTFC64GAKAEEY-4MIT

Micron Technology

MTFC64GAKAEEY-4MIT by Micron Technology is a 64GX8 MLC NAND flash memory with 549755813888 bit density. Operating in industrial temperature range (-40 to 85 °C), it features synchronous operation, thin profile grid array package, and 153 terminals for parallel communication. Ideal for high-density storage applications requiring fast data access and reliability.

R-PBGA-B153

e1

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

85 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

30

MLC NAND TYPE

11.5 mm

IS21ES04G-JCLI by Integrated Silicon Solution

IS21ES04G-JCLI

Integrated Silicon Solution

IS21ES04G-JCLI by Integrated Silicon Solution is a 4GX8 Flash Memory with 3.3V programming voltage and 85°C max operating temp. Ideal for industrial applications, it features a very thin profile grid array package with 153 terminals and operates in synchronous mode.

R-PBGA-B153

e1

13 mm

34359738368 bit

FLASH

8

3

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

10

11.5 mm

IS21ES04G-JQLI by Integrated Silicon Solution

IS21ES04G-JQLI

Integrated Silicon Solution

IS21ES04G-JQLI by Integrated Silicon Solution is a 4GX8 flash memory with 34359738368 bit density. Operating at 3.3V, it offers synchronous mode and industrial temperature grade suitability. With a package size of 18mm x 14mm, this low-profile grid array memory chip is ideal for high-performance applications requiring parallel data processing.

R-PBGA-B100

e1

18 mm

34359738368 bit

FLASH

8

3

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

260

3.3

1.4 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10

14 mm

IS21ES08G-JCLI by Integrated Silicon Solution

IS21ES08G-JCLI

Integrated Silicon Solution

IS21ES08G-JCLI by Integrated Silicon Solution is a 3.3V synchronous flash memory with 8GX8 organization, operating at up to 200MHz clock frequency. Ideal for industrial applications, this MLC NAND type memory offers a memory density of 68719476736 bits and features a very thin profile grid array package with fine pitch terminals.

1

200 MHz

NO

NO

R-PBGA-B153

e1

13 mm

68719476736 bit

FLASH

8

3

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

3-STATE

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

10

NO

MLC NAND TYPE

11.5 mm

IS21ES16G-JCLI by Integrated Silicon Solution

IS21ES16G-JCLI

Integrated Silicon Solution

IS21ES16G-JCLI by Integrated Silicon Solution is a 16GX8 Flash Memory with synchronous operation and a max clock frequency of 200 MHz. It has a memory density of 137438953472 bit and is suitable for industrial applications.

1

200 MHz

NO

NO

R-PBGA-B153

e1

13 mm

137438953472 bit

FLASH

8

3

1

153

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

3-STATE

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

10

NO

MLC NAND TYPE

11.5 mm

IS21ES32G-JCLI by Integrated Silicon Solution

IS21ES32G-JCLI

Integrated Silicon Solution

IS21ES32G-JCLI by Integrated Silicon Solution is a 32GX8 MLC NAND flash memory with 3-STATE output, operating at up to 200 MHz. It features a very thin profile grid array package suitable for industrial applications requiring high memory density and a wide operating temperature range from -40°C to 85°C.

1

200 MHz

NO

NO

R-PBGA-B153

e1

13 mm

274877906944 bit

FLASH

8

3

1

153

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

3-STATE

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

10

NO

MLC NAND TYPE

11.5 mm

IS22ES04G-JCLA1 by Integrated Silicon Solution

IS22ES04G-JCLA1

Integrated Silicon Solution

IS22ES04G-JCLA1 by Integrated Silicon Solution is a 4GX8 flash memory with 3.3V programming voltage and operates synchronously at -40 to 85°C. With a package style of GRID ARRAY, it's ideal for industrial applications requiring high memory density and reliability in harsh environments.

R-PBGA-B153

e1

13 mm

34359738368 bit

FLASH

8

3

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

AEC-Q100

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

10

11.5 mm

N25Q032A13EF4A0FTR by Micron Technology

N25Q032A13EF4A0FTR

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 108 MHz;

108 MHz

R-PDSO-N8

4 mm

33554432 bit

FLASH

1

1

8

33554432 words

32M

SYNCHRONOUS

125 Cel

-40 Cel

32MX1

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

3

.6 mm

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

NO LEAD

.8 mm

DUAL

NOR TYPE

3 mm

MT25QL256ABA8E12-1SAT by Micron Technology

MT25QL256ABA8E12-1SAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Width: 8;

133 MHz

R-PBGA-B24

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

MT25QL256ABA8E14-1SIT by Micron Technology

MT25QL256ABA8E14-1SIT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

133 MHz

R-PBGA-B24

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

MT25QL256ABA8ESF-MSIT by Micron Technology

MT25QL256ABA8ESF-MSIT

Micron Technology

Micron Technology's MT25QL256ABA8ESF-MSIT is a 32MX8 flash memory IC with 268Mbit density. It operates at 133MHz clock frequency, suitable for industrial applications. With synchronous operation and serial interface, it offers fast data transfer in a small outline package.

133 MHz

R-PDSO-G16

10.3 mm

268435456 bit

FLASH

8

1

16

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3

2.65 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

7.5 mm

MT29F1G16ABBEAHC:E by Micron Technology

MT29F1G16ABBEAHC:E

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Operating Mode: ASYNCHRONOUS;

R-PBGA-B63

13 mm

1073741824 bit

FLASH

16

1

63

67108864 words

64M

ASYNCHRONOUS

70 Cel

0 Cel

64MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

SLC NAND TYPE

10.5 mm

IS34ML01G084-TLI by Integrated Silicon Solution

IS34ML01G084-TLI

Integrated Silicon Solution

IS34ML01G084-TLI by Integrated Silicon Solution is a 128MX8 SLC NAND flash memory with 134217728 words. Operating at 3.3V, it has a temperature range of -40 to 85 °C and uses parallel interface technology. Ideal for industrial applications requiring high-density memory in a small outline package.

R-PDSO-G48

e3

18.4 mm

1073741824 bit

FLASH

8

3

1

48

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN

GULL WING

.5 mm

DUAL

SLC NAND TYPE

12 mm