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MT28EW512ABA1LPN-0SIT

Micron Technology

MT28EW512ABA1LPN-0SIT by Micron Technology

Micron Technology's MT28EW512ABA1LPN-0SIT is a Flash Memory with 32MX16 organization, 8-bit width, and 33554432 words. Operating at -40 to 85 °C, it has a very thin profile package style suitable for industrial applications requiring fast access times of up to 95 ns.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 18,500 parts In-Stock

1+ parts

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18,500

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Vyrian

USA . 3,711 parts In-Stock

1+ parts

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3,711

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Sensible Micro Corp

USA . 2,074 parts In-Stock

1+ parts

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2,074

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Digiode

USA . 437 parts In-Stock

1+ parts

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437

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

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50

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 342 parts In-Stock

1+ parts

$11.570

100+ parts

-

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10k+ parts

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342

$11.570

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Argo Parts USA

USA . 3,739 parts In-Stock

1+ parts

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3,739

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Continental Prestige Electronics

USA . 933 parts In-Stock

1+ parts

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933

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Corphita

USA . 377 parts In-Stock

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377

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Aranea Global

USA . 100 parts In-Stock

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100

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Overview

Unlock the power of reliable and high-performance Flash Memory with the MT28EW512ABA1LPN-0SIT from Micron Technology. With a commitment to quality and innovation, Micron Technology delivers cutting-edge solutions for a wide range of applications. This versatile memory device offers customers exceptional value, superior benefits, and unmatched advantages. Whether you're looking to enhance storage capacity, improve system performance, or streamline data access, the MT28EW512ABA1LPN-0SIT is the ideal choice for all your memory needs. Trust Micron Technology to provide top-tier products that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material makes the package durable and reliable for long-term use.

Surface Mount: YES

Allows for easy integration onto circuit boards, saving space and enabling efficient PCB design.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enables faster data transfer and access speeds compared to synchronous modes.

Nominal Supply Voltage / Vsup (V): 3

Operates efficiently at a standard supply voltage of 3V, making it compatible with common electronic systems.

Minimum Operating Temperature: -40 °C

Capable of functioning in extreme low-temperature environments, suitable for various industrial applications.

Memory IC Type: FLASH

Flash memory technology offers fast read and write speeds, ideal for applications requiring frequent data storage and retrieval.

Technical Specifications

Flash Memory MT28EW512ABA1LPN-0SIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

95 ns

Alternate Memory Width:

8

JESD-30 Code:

R-PBGA-B56

Length:

9 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

56

No. of Words:

33554432 words

No. of Words Code:

32M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Programming Voltage (V):

3

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7 mm

Trade Compliance

MT28EW512ABA1LPN-0SIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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