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MT29F1G01AAADDH4-IT:DTR

Micron Technology

MT29F1G01AAADDH4-IT:DTR by Micron Technology

Micron Technology's MT29F1G01AAADDH4-IT:DTR is a 3.3V SLC NAND Flash Memory with 1073741824-bit memory density. Operating at up to 50MHz, it features a very thin profile grid array package and is suitable for industrial applications requiring high-speed synchronous operation.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,142 parts In-Stock

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Vyrian

USA . 1,935 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,134 parts In-Stock

1+ parts

$15.000

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1,134

$15.000

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AZTECH Wire

Italy . 731 parts In-Stock

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$18.720

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731

$18.720

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Continental Prestige Electronics

USA . 1,481 parts In-Stock

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Argo Parts USA

USA . 1,072 parts In-Stock

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Microchip USA

USA . 292 parts In-Stock

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292

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Corphita

USA . 110 parts In-Stock

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Aranea Global

USA . 50 parts In-Stock

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Overview

Discover the cutting-edge MT29F1G01AAADDH4-IT:DTR by Micron Technology, a leading manufacturer of high-quality flash memory solutions. This innovative product offers unparalleled reliability and performance for a wide range of applications. With its advanced technology and industrial-grade temperature tolerance, this SLC NAND type memory chip is perfect for demanding environments where speed and durability are essential. Experience the value and benefits that Micron's flash memory brings to your projects, unlocking new possibilities and ensuring top-notch performance every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material ensures the product is robust and easy to handle.

Surface Mount: YES

Easily integrated into circuit boards without the need for additional hardware.

Operating Mode: SYNCHRONOUS

Ensures precise and synchronized data transfer for efficient operation.

Nominal Supply Voltage / Vsup (V): 3.3

Optimal voltage level for reliable and stable performance.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, suitable for industrial environments.

Technology: CMOS

Low power consumption and high speed operation for energy-efficient performance.

Memory Density: 1073741824 bit

High memory density allows for storing large amounts of data in a compact form factor.

Technical Specifications

Flash Memory MT29F1G01AAADDH4-IT:DTR attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

50 MHz

JESD-30 Code:

R-PBGA-B63

JESD-609 Code:

e1

Length:

11 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

63

No. of Words:

1073741824 words

No. of Words Code:

1G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1GX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

SERIAL

Programming Voltage (V):

2.7

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Type:

SLC NAND TYPE

Width:

9 mm

Trade Compliance

MT29F1G01AAADDH4-IT:DTR Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.1.A

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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