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MTFC64GAKAEEY-4MIT

Micron Technology

MTFC64GAKAEEY-4MIT by Micron Technology

MTFC64GAKAEEY-4MIT by Micron Technology is a 64GX8 MLC NAND flash memory with 549755813888 bit density. Operating in industrial temperature range (-40 to 85 °C), it features synchronous operation, thin profile grid array package, and 153 terminals for parallel communication. Ideal for high-density storage applications requiring fast data access and reliability.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Chip Stock

USA . 10,200 parts In-Stock

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Vyrian

USA . 5,855 parts In-Stock

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Digiode

USA . 543 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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Prism Electronics

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AZTECH Wire

Italy . 143 parts In-Stock

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$8.890

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Ampacity Inc.

Singapore . 1,026 parts In-Stock

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$23.000

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Kepictronics

USA . 5,000 parts In-Stock

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Argo Parts USA

USA . 3,550 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Corphita

USA . 1,969 parts In-Stock

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Continental Prestige Electronics

USA . 1,960 parts In-Stock

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Microchip USA

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Overview

Experience the cutting-edge technology of Micron Technology with the MTFC64GAKAEEY-4MIT Flash Memory. Designed for industrial-grade applications, this flash memory offers high-performance and reliability. With a memory density of 549755813888 bits and a compact design, this product is perfect for various storage solutions. Trust in Micron's reputation for quality and innovation, and elevate your projects with the MTFC64GAKAEEY-4MIT Flash Memory.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable, which is ideal for portable devices.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on circuit boards, saving space and enabling automated assembly processes.

Operating Mode: SYNCHRONOUS

Operating in synchronous mode ensures data transfer is synchronized with the system clock, resulting in faster and more efficient performance.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this product can function reliably in a variety of environmental conditions, making it suitable for industrial applications.

Organization: 64GX8

The 64GX8 organization provides a high density of memory cells in a compact form factor, allowing for large storage capacity in a small footprint.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption and high speed operation, making the product energy-efficient and fast.

Memory IC Type: FLASH CARD

Being a flash memory card, this product offers non-volatile storage capabilities, allowing data to be retained even without power, which is essential for data storage applications.

Technical Specifications

Flash Memory MTFC64GAKAEEY-4MIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-PBGA-B153

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

549755813888 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

153

No. of Words:

68719476736 words

No. of Words Code:

64G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

2.7

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Type:

MLC NAND TYPE

Width:

11.5 mm

Trade Compliance

MTFC64GAKAEEY-4MIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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