Loading...

MT29F2G08ABAEAH4-ITX:ETR

Micron Technology

MT29F2G08ABAEAH4-ITX:ETR by Micron Technology

Micron Technology's MT29F2G08ABAEAH4-ITX:ETR is a 256MX8 SLC NAND flash memory with 2147483648-bit density. Operating at 3.3V, it offers industrial-grade temperature range of -40 to 85 °C. Suitable for applications requiring high-speed parallel memory access in compact devices.

Median Price

$4.166

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 61,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

61,000

-

-

-

-

Arrow

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$4.166

10k+ parts

$4.108

1,000

-

-

$4.166

$4.108

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,940 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,940

-

-

-

-

Chip Stock

USA . 4,937 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,937

-

-

-

-

Nova Conductors

Japan . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Digiode

USA . 72 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

72

-

-

-

-

Semtec, LLC

USA . 5 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5

-

-

-

-

ACDS - Activité Composants Distribution Service

France . 5 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5

-

-

-

-

Lantek

USA . 3 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 30,656 parts In-Stock

1+ parts

$7.600

100+ parts

-

1k+ parts

-

10k+ parts

-

30,656

$7.600

-

-

-

AZTECH Wire

Italy . 224 parts In-Stock

1+ parts

$12.250

100+ parts

-

1k+ parts

-

10k+ parts

-

224

$12.250

-

-

-

Glotronic Ltd.

UK . 40,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

40,800

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 20,070 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

20,070

-

-

-

-

Perfect Parts

USA . 10,080 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,080

-

-

-

-

Corphita

USA . 1,913 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,913

-

-

-

-

Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Microchip USA

USA . 249 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

249

-

-

-

-

Aranea Global

USA . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

100

-

-

-

-

Overview

Experience the superior quality of Micron Technology with the MT29F2G08ABAEAH4-ITX:ETR Flash Memory. This innovative product offers a reliable solution for a wide range of applications, delivering exceptional performance and durability. With a focus on delivering value and benefits to customers, Micron Technology ensures that you get the best in class product that meets your needs seamlessly. Trust Micron Technology for cutting-edge technology and unparalleled excellence in the field of flash memory.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides a good balance of durability and cost-effectiveness.

Surface Mount: YES

Being surface mountable allows for easier and more efficient integration into electronic circuits.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode offers faster data access and transfer speeds compared to synchronous modes.

Nominal Supply Voltage (V): 3.3

The nominal supply voltage of 3.3V ensures compatibility with a wide range of electronic systems.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this flash memory can withstand high heat environments.

Memory IC Type: FLASH

The use of flash memory technology ensures fast read and write speeds, making it ideal for data storage and transfer applications.

Technical Specifications

Flash Memory MT29F2G08ABAEAH4-ITX:ETR attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-PBGA-B63

JESD-609 Code:

e1

Length:

11 mm

Memory Density:

2147483648 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

63

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Programming Voltage (V):

3.3

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Type:

SLC NAND TYPE

Width:

9 mm

Trade Compliance

MT29F2G08ABAEAH4-ITX:ETR Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.1.A

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20