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IS22ES04G-JCLA1

Integrated Silicon Solution

IS22ES04G-JCLA1 by Integrated Silicon Solution

IS22ES04G-JCLA1 by Integrated Silicon Solution is a 4GX8 flash memory with 3.3V programming voltage and operates synchronously at -40 to 85°C. With a package style of GRID ARRAY, it's ideal for industrial applications requiring high memory density and reliability in harsh environments.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 4,755 parts In-Stock

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Chip Stock

USA . 3,620 parts In-Stock

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Nova Conductors

Japan . 400 parts In-Stock

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Aztec Data Supply Inc.

USA . 881 parts In-Stock

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$5.151

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881

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AZTECH Wire

Italy . 840 parts In-Stock

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$8.649

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840

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Corohmni

South Africa . 37 parts In-Stock

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$10.664

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Continental Prestige Electronics

USA . 4,204 parts In-Stock

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Argo Parts USA

USA . 3,030 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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Aranea Global

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RC Electronics

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Overview

Experience the next level of performance and reliability with the IS22ES04G-JCLA1 by Integrated Silicon Solution. As a leader in flash memory technology, ISS delivers top-quality products that are perfect for a wide range of applications. With its advanced features and cutting-edge design, this flash memory device offers unparalleled value and benefits to customers looking for high-speed, synchronous operation and industrial-grade temperature tolerance. Trust ISS to provide you with the best solution for your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the flash memory, making it suitable for various environments.

Surface Mount: YES

Allows for easy and secure mounting on a circuit board, saving space and simplifying the assembly process.

Screening Level: AEC-Q100

Compliance with automotive industry standards ensures reliability and performance in automotive applications.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfer rates and better overall performance.

Nominal Supply Voltage / Vsup (V): 3.3

Standard voltage level for compatibility with a wide range of systems and devices.

Maximum Operating Temperature: 85 °C

Can function efficiently in high-temperature environments, increasing the versatility of the flash memory.

Organization: 4GX8

Organized in a 4GB x 8 configuration, providing a large storage capacity for data-intensive applications.

Minimum Operating Temperature: -40 °C

Capable of operating in extremely low-temperature conditions, ideal for rugged and demanding environments.

Terminal Finish: TIN SILVER COPPER

This finish ensures good conductivity and corrosion resistance, enhancing the reliability and longevity of the product.

Maximum Seated Height: 1 mm

Low profile design for space-constrained applications, making it versatile and easy to integrate.

Technology: CMOS

CMOS technology offers low power consumption and high speed, making the flash memory energy-efficient and fast.

Technical Specifications

Flash Memory IS22ES04G-JCLA1 attributes and parameters. Explore more Flash Memory devices from Integrated Silicon Solution

Specs

JESD-30 Code:

R-PBGA-B153

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

34359738368 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

153

No. of Words:

4294967296 words

No. of Words Code:

4G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

3.3

Screening Level:

AEC-Q100

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

10

Width:

11.5 mm

Trade Compliance

IS22ES04G-JCLA1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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