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MTFC16GAKAENA-4MIT

Micron Technology

MTFC16GAKAENA-4MIT by Micron Technology

Micron Technology's MTFC16GAKAENA-4MIT is a 16GX8 flash memory with 17179869184 words capacity. Operating in synchronous mode, it has a temperature range of -40 to 85 °C and supports parallel programming. With a compact rectangular shape and thin profile, it is ideal for industrial applications requiring high memory density and fast data access.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,811 parts In-Stock

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6,811

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Dynamic Solutions

Germany . 4,000 parts In-Stock

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4,000

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Digiode

USA . 2,055 parts In-Stock

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2,055

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Cyclops Electronics Ltd

UK . 1,020 parts In-Stock

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1,020

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Chip Stock

USA . 893 parts In-Stock

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893

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Nova Conductors

Japan . 15 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,290 parts In-Stock

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$1.000

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$1.000

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AZTECH Wire

Italy . 263 parts In-Stock

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$14.674

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263

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Perfect Parts

USA . 12,096 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,365 parts In-Stock

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Kepictronics

USA . 5,000 parts In-Stock

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S.R.D Solutions

India . 4,000 parts In-Stock

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Argo Parts USA

USA . 2,055 parts In-Stock

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Continental Prestige Electronics

USA . 1,230 parts In-Stock

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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Corphita

USA . 856 parts In-Stock

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Futuretech Components

Singapore . 750 parts In-Stock

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750

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Microchip USA

USA . 193 parts In-Stock

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193

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Bastille Electronics

Australia . 35 parts In-Stock

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35

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Overview

Upgrade your devices with the MTFC16GAKAENA-4MIT from Micron Technology, a leading manufacturer in the industry. This Flash Memory card offers high-quality performance and reliability, making it perfect for a wide range of applications. With its advanced technology and industrial-grade temperature rating, this product guarantees optimal functionality and durability. Experience seamless operation and efficient data storage with Micron's cutting-edge memory solutions. Elevate your devices with the value and benefits that only Micron can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable devices.

Surface Mount: YES

Surface mount capability simplifies PCB assembly and reduces overall product size.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data transmission is coordinated and efficient, improving overall performance.

No. of Terminals: 100

Having 100 terminals provides ample connection options and flexibility for integration into various systems.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, the product can withstand demanding environmental conditions.

Organization: 16GX8

The 16GX8 organization allows for efficient data storage and retrieval, enhancing the product's overall usability.

Minimum Operating Temperature: -40 °C

The wide range of operating temperatures ensures the product can function reliably in extreme cold environments.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

The use of tin/silver/copper terminal finish enhances conductivity and reliability of the connections.

Width: 14 mm

The compact width of 14mm makes the product suitable for space-constrained designs.

Maximum Supply Voltage (Vsup): 3.6 V

Having a high maximum supply voltage range provides compatibility with a wide range of systems and applications.

Technical Specifications

Flash Memory MTFC16GAKAENA-4MIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-PBGA-B100

JESD-609 Code:

e1

Length:

18 mm

Memory Density:

137438953472 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

100

No. of Words:

17179869184 words

No. of Words Code:

16G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

2.7

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Trade Compliance

MTFC16GAKAENA-4MIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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