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IS25LQ040B-JKLE-TR

Integrated Silicon Solution

IS25LQ040B-JKLE-TR by Integrated Silicon Solution

IS25LQ040B-JKLE-TR by Integrated Silicon Solution is a 4Mbit Flash Memory with synchronous operation at up to 104MHz. It features a small outline package, operates in industrial temperature range (-40°C to 105°C), and has a supply voltage of 2.3V to 3.6V. Ideal for applications requiring high-speed data storage in compact electronic devices.

Median Price

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1k+

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Vyrian

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Aztec Data Supply Inc.

USA . 4,518 parts In-Stock

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Corohmni

South Africa . 30 parts In-Stock

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AZTECH Wire

Italy . 753 parts In-Stock

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Argo Parts USA

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Continental Prestige Electronics

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Bastille Electronics

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Authorized Procurement Solutions

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Overview

Unlock the power of reliable and high-quality flash memory with the IS25LQ040B-JKLE-TR from Integrated Silicon Solution. Designed for industrial applications, this small outline, heat sink package offers a very thin profile and synchronous operation for seamless performance. With a maximum clock frequency of 104 MHz and a memory density of 4194304 bits, this flash memory product provides fast and efficient data storage solutions. Trust in the expertise of Integrated Silicon Solution to deliver top-notch products that meet your needs and exceed your expectations. Experience the benefits of superior technology and innovation with IS25LQ040B-JKLE-TR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this flash memory lightweight and durable.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on circuit boards.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy integration into various electronic devices.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures fast and reliable data transfer.

Nominal Supply Voltage / Vsup (V): 3

The 3V nominal supply voltage provides stable power to the flash memory.

No. of Terminals: 8

With 8 terminals, this flash memory offers versatile connectivity options.

Package Style (Meter): SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

The small outline, heat sink/slug, and thin profile design make this flash memory space-saving and efficient.

Maximum Operating Temperature: 105 °C

The high maximum operating temperature makes this flash memory suitable for industrial applications.

Organization: 4MX1

The 4MX1 organization allows for efficient data storage and retrieval.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures reliable performance in varying environments.

Terminal Position: DUAL

Dual terminal position provides flexibility in installation and connection.

Maximum Seated Height: 0.8 mm

The low maximum seated height enables compact design integration.

Maximum Clock Frequency (fCLK): 104 MHz

The high maximum clock frequency allows for fast data processing.

Width: 5 mm

The 5mm width of the flash memory allows for compact installation.

Minimum Supply Voltage (Vsup): 2.3 V

The minimum supply voltage of 2.3V ensures stable operation even in low power conditions.

Length: 6 mm

The 6mm length of the flash memory makes it suitable for small electronic devices.

Programming Voltage (V): 3

The programming voltage of 3V simplifies the programming process.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures reliable operation in harsh conditions.

Technology: CMOS

The CMOS technology used in this flash memory offers low power consumption and high speed.

Parallel or Serial: SERIAL

The serial interface allows for sequential data transfer, ideal for certain applications.

Terminal Form: NO LEAD

The no-lead terminal form makes this flash memory environmentally friendly.

No. of Words: 4194304 words

With a large number of words, this flash memory offers ample storage capacity.

Terminal Pitch: 1.27 mm

The 1.27mm terminal pitch allows for easy connection to other components.

No. of Words Code: 4M

The 4M-word code simplifies data management and organization.

Maximum Supply Voltage (Vsup): 3.6 V

The high maximum supply voltage of 3.6V ensures stable operation in varying conditions.

Memory Density: 4194304 bit

The high memory density of 4194304 bits allows for storing a large amount of data.

Memory IC Type: FLASH

Being a flash memory IC, this product offers non-volatile storage and fast access times.

Technical Specifications

Flash Memory IS25LQ040B-JKLE-TR attributes and parameters. Explore more Flash Memory devices from Integrated Silicon Solution

Specs

Maximum Clock Frequency (fCLK):

104 MHz

JESD-30 Code:

R-PDSO-N8

Length:

6 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4MX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Programming Voltage (V):

3

Maximum Seated Height:

.8 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

5 mm

Trade Compliance

IS25LQ040B-JKLE-TR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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