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RECTANGULAR Flash Memory 1,448

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
MT35XU01GBBA2G12-0SITTR by Micron Technology

MT35XU01GBBA2G12-0SITTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 260; No. of Words Code: 128M;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU02GCBA1G12-0AATTR by Micron Technology

MT35XU02GCBA1G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B24; Terminal Pitch: 1 mm;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU02GCBA1G12-0AUTTR by Micron Technology

MT35XU02GCBA1G12-0AUTTR

Micron Technology

Micron Technology's MT35XU02GCBA1G12-0AUTTR is a 256MX8 NOR flash memory with 200 MHz clock frequency, 1.8V programming voltage, and 100K write/erase cycles. It operates in serial mode via SPI bus, suitable for automotive applications due to AEC-Q100 screening and -40 to 125°C temperature range.

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

125 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU02GCBA1G12-0SITTR by Micron Technology

MT35XU02GCBA1G12-0SITTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Form: BALL; Maximum Operating Temperature: 85 Cel;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU02GCBA2G12-0AATTR by Micron Technology

MT35XU02GCBA2G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Words: 268435456 words; Maximum Clock Frequency (fCLK): 200 MHz;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU02GCBA2G12-0AUTTR by Micron Technology

MT35XU02GCBA2G12-0AUTTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Data Retention Time: 20; Operating Mode: SYNCHRONOUS;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

125 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU02GCBA2G12-0SITTR by Micron Technology

MT35XU02GCBA2G12-0SITTR

Micron Technology

Micron Technology's MT35XU02GCBA2G12-0SITTR is a 256MX8 NOR type flash memory with a memory density of 2Gb. It operates at a max clock frequency of 200MHz and has a min data retention time of 20 years. This flash memory is commonly used in applications that require high-speed, non-volatile storage such as automotive, industrial, and consumer electronics.

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU256ABA1G12-0AATTR by Micron Technology

MT35XU256ABA1G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Surface Mount: YES; Minimum Supply Voltage (Vsup): 1.7 V;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU256ABA1G12-0AUTTR by Micron Technology

MT35XU256ABA1G12-0AUTTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 2 V; Package Body Material: PLASTIC/EPOXY;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

125 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU256ABA2G12-0AATTR by Micron Technology

MT35XU256ABA2G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.7 V; Endurance: 100000 Write/Erase Cycles;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU256ABA2G12-0AUTTR by Micron Technology

MT35XU256ABA2G12-0AUTTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Form: BALL; Screening Level: AEC-Q100;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

125 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU512ABA1G12-0AATTR by Micron Technology

MT35XU512ABA1G12-0AATTR

Micron Technology

Micron Technology's MT35XU512ABA1G12-0AATTR is a 64MX8 NOR flash memory with 67108864 words. Operating at 200 MHz, it has a supply voltage range of 1.7V to 2V and endurance of 100000 cycles. Ideal for automotive applications due to AEC-Q100 screening level and -40°C to 105°C operating temperature range.

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU512ABA1G12-0AUTTR by Micron Technology

MT35XU512ABA1G12-0AUTTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS; Terminal Form: BALL;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

125 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU512ABA2G12-0AATTR by Micron Technology

MT35XU512ABA2G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel; Width: 6 mm;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU512ABA2G12-0AUTTR by Micron Technology

MT35XU512ABA2G12-0AUTTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 260; Surface Mount: YES;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

125 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU512ABA2G12-0SITTR by Micron Technology

MT35XU512ABA2G12-0SITTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.7 V; Package Equivalence Code: BGA24,5X5,40;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MTFC32GAPALBH-IT by Micron Technology

MTFC32GAPALBH-IT

Micron Technology

Micron Technology's MTFC32GAPALBH-IT is a 32GX8 NAND flash memory with 3-STATE output, operating at up to 200 MHz. It features a thin profile grid array package suitable for industrial applications. With a wide temperature range (-40 to 85°C) and high memory density (274877906944 bit), it is ideal for demanding environments requiring fast data storage and retrieval.

200 MHz

R-PBGA-B153

e1

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

30

NAND TYPE

11.5 mm

IS22TF32G-JCLA2 by Integrated Silicon Solution

IS22TF32G-JCLA2

Integrated Silicon Solution

IS22TF32G-JCLA2 by Integrated Silicon Solution is a 32GX8 TLC NAND flash memory with 3.3V programming voltage, 200 MHz clock frequency, and 105°C max operating temp. Ideal for applications requiring high-speed data storage in automotive electronics due to AEC-Q100 screening level and compact grid array package design.

200 MHz

R-PBGA-B153

13 mm

274877906944 bit

FLASH

8

1

153

34359738368 words

32G

SYNCHRONOUS

105 Cel

-40 Cel

32GX8

3-STATE

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

NOT SPECIFIED

3.3

AEC-Q100

1 mm

.00003 Amp

55 mA

3.6 V

2.7 V

3.3

YES

CMOS

BALL

.5 mm

BOTTOM

NOT SPECIFIED

TLC NAND TYPE

11.5 mm

HARDWARE/SOFTWARE

MT29F8G08ABABAWP-ITX:B by Micron Technology

MT29F8G08ABABAWP-ITX:B

Micron Technology

Micron Technology's MT29F8G08ABABAWP-ITX:B is an 8Gb SLC NAND flash memory with 3.3V supply voltage, operating from -40 to 85°C. It has a memory density of 8.58 Gb and is suitable for industrial applications requiring high reliability and performance in a surface-mount package.

NO

R-PDSO-G48

e3

8589934592 bit

FLASH

8

1

48

1073741824 words

1G

ASYNCHRONOUS

85 Cel

-40 Cel

1GX8

PLASTIC/EPOXY

RECTANGULAR

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

DUAL

NO

SLC NAND TYPE

MTFC8GAKAJCN-1MWT by Micron Technology

MTFC8GAKAJCN-1MWT

Micron Technology

MTFC8GAKAJCN-1MWT by Micron Technology is a 8GX8 MLC NAND flash memory with 68719476736 bit density. It operates at 3.3V, has a temperature range of -25 to 85 °C, and uses synchronous mode. Ideal for applications requiring high memory capacity in compact devices.

ALSO AVAILABE WITH TAPE AND REEL

NO

NO

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-25 Cel

8GX8

OPEN-DRAIN

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

NOT SPECIFIED

NO

MLC NAND TYPE

11.5 mm

MTFC4GACAJCN-1MWT by Micron Technology

MTFC4GACAJCN-1MWT

Micron Technology

MTFC4GACAJCN-1MWT by Micron Technology is a 4GX8 MLC NAND flash memory with 3.3V supply voltage, operating at -25 to 85 °C. It features a grid array package style, open-drain output, and very thin profile for applications requiring high-density storage in compact devices.

ALSO AVAILABE WITH TAPE AND REEL

NO

NO

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-25 Cel

4GX8

OPEN-DRAIN

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NO

MLC NAND TYPE

11.5 mm

MT29F1G01ABBFDSF-IT:F by Micron Technology

MT29F1G01ABBFDSF-IT:F

Micron Technology

Micron Technology's MT29F1G01ABBFDSF-IT:F is a 128MX8 SLC NAND flash memory with 1.8V supply voltage, operating at up to 83MHz clock frequency. It offers 100000 write/erase cycles and uses SPI serial bus type, suitable for applications requiring high endurance and fast data transfer speeds.

83 MHz

10

100000 Write/Erase Cycles

R-PDSO-G16

10.3 mm

1073741824 bit

FLASH

8

1

16

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

3-STATE

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

1.8

2.65 mm

SPI

.00005 Amp

35 mA

1.95 V

1.7 V

1.8

YES

CMOS

GULL WING

1.27 mm

DUAL

SLC NAND TYPE

7.5 mm

HARDWARE/SOFTWARE

MT29F8G16ABBCAH4:C by Micron Technology

MT29F8G16ABBCAH4:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Maximum Supply Current: 20 mA;

30 ns

YES

NO

R-PBGA-B63

8589934592 bit

FLASH

16

4K

63

536870912 words

512M

70 Cel

0 Cel

512MX16

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

1.8

1.8

Not Qualified

YES

128K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F8G16ABACAWP:C by Micron Technology

MT29F8G16ABACAWP:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

25 ns

YES

NO

R-PDSO-G48

8589934592 bit

FLASH

16

4K

48

536870912 words

512M

70 Cel

0 Cel

512MX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2K

PARALLEL

3/3.3

3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

35 mA

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

MT29F16G08ADBCAH4:C by Micron Technology

MT29F16G08ADBCAH4:C

Micron Technology

MT29F16G08ADBCAH4:C by Micron Technology is a 1.8V SLC NAND flash memory with 2GX8 organization, 4K page size, and 256K sector size. It operates b/w 0-70°C, has a max standby current of 0.00005A, and is suitable for commercial applications requiring fast access times and low power consumption.

30 ns

YES

NO

R-PBGA-B63

17179869184 bit

FLASH

8

8K

63

2147483648 words

2G

70 Cel

0 Cel

2GX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

4K

PARALLEL

1.8

1.8

Not Qualified

YES

256K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F8G08ABACAH4:C by Micron Technology

MT29F8G08ABACAH4:C

Micron Technology

Micron Technology's MT29F8G08ABACAH4:C is a 3.3V SLC NAND flash memory with 1GX8 organization, 4K page size, and 256K sector size. It operates in asynchronous mode with a max temperature of 70°C. Ideal for applications requiring high-speed data storage and retrieval in commercial-grade environments.

YES

NO

R-PBGA-B63

11 mm

8589934592 bit

FLASH

8

1

4K

63

1073741824 words

1G

ASYNCHRONOUS

70 Cel

0 Cel

1GX8

PLASTIC/EPOXY

TFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

4K

PARALLEL

3/3.3

Not Qualified

YES

1 mm

256K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

MT29F16G16ADBCAH4:C by Micron Technology

MT29F16G16ADBCAH4:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Ready or Busy: YES;

30 ns

YES

NO

R-PBGA-B63

17179869184 bit

FLASH

16

8K

63

1073741824 words

1G

70 Cel

0 Cel

1GX16

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

1.8

1.8

Not Qualified

YES

128K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F16G08ADBCAH4-IT:C by Micron Technology

MT29F16G08ADBCAH4-IT:C

Micron Technology

MT29F16G08ADBCAH4-IT:C by Micron Technology is a Flash Memory with 2GX8 organization, 8K sectors, and 4K page size. It is used in industrial applications with a temperature range of -40 to 85 °C.

30 ns

YES

NO

R-PBGA-B63

17179869184 bit

FLASH

8

8K

63

2147483648 words

2G

85 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

4K

PARALLEL

1.8

1.8

Not Qualified

YES

256K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F16G08ADACAH4:C by Micron Technology

MT29F16G08ADACAH4:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Command User Interface: YES;

25 ns

YES

NO

R-PBGA-B63

17179869184 bit

FLASH

8

8K

63

2147483648 words

2G

70 Cel

0 Cel

2GX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

4K

PARALLEL

3/3.3

3.3

Not Qualified

YES

256K

.0001 Amp

Flash Memories

35 mA

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F8G16ABACAH4-IT:C by Micron Technology

MT29F8G16ABACAH4-IT:C

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Terminal Pitch: .8 mm;

25 ns

YES

NO

R-PBGA-B63

8589934592 bit

FLASH

16

4K

63

536870912 words

512M

85 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

3/3.3

3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

35 mA

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F8G08ABACAWP:C by Micron Technology

MT29F8G08ABACAWP:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Memory Width: 8;

YES

NO

R-PDSO-G48

18.4 mm

8589934592 bit

FLASH

8

1

4K

48

1073741824 words

1G

ASYNCHRONOUS

70 Cel

0 Cel

1GX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4K

PARALLEL

3/3.3

Not Qualified

YES

1.2 mm

256K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

MT29F8G16ABBCAH4-IT:C by Micron Technology

MT29F8G16ABBCAH4-IT:C

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Type: SLC NAND TYPE;

30 ns

YES

NO

R-PBGA-B63

8589934592 bit

FLASH

16

4K

63

536870912 words

512M

85 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

1.8

1.8

Not Qualified

YES

128K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F16G16ADACAH4-IT:C by Micron Technology

MT29F16G16ADACAH4-IT:C

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; No. of Words Code: 1G;

25 ns

YES

NO

R-PBGA-B63

17179869184 bit

FLASH

16

8K

63

1073741824 words

1G

85 Cel

-40 Cel

1GX16

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

3/3.3

3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

35 mA

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F16G16ADACAH4:C by Micron Technology

MT29F16G16ADACAH4:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Package Equivalence Code: BGA63,10X12,32;

25 ns

YES

NO

R-PBGA-B63

17179869184 bit

FLASH

16

8K

63

1073741824 words

1G

70 Cel

0 Cel

1GX16

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

3/3.3

3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

35 mA

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F8G08ABBCAH4:C by Micron Technology

MT29F8G08ABBCAH4:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Maximum Access Time: 30 ns;

30 ns

YES

NO

R-PBGA-B63

8589934592 bit

FLASH

8

4K

63

1073741824 words

1G

70 Cel

0 Cel

1GX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

4K

PARALLEL

1.8

1.8

Not Qualified

YES

256K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F8G16ABACAH4:C by Micron Technology

MT29F8G16ABACAH4:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; No. of Words: 536870912 words;

25 ns

YES

NO

R-PBGA-B63

8589934592 bit

FLASH

16

4K

63

536870912 words

512M

70 Cel

0 Cel

512MX16

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

3/3.3

3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

35 mA

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F16G16ADBCAH4-IT:C by Micron Technology

MT29F16G16ADBCAH4-IT:C

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Pitch: .8 mm;

30 ns

YES

NO

R-PBGA-B63

11 mm

17179869184 bit

FLASH

16

1

8K

63

1073741824 words

1G

ASYNCHRONOUS

85 Cel

-40 Cel

1GX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

1.8

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

MLC NAND TYPE

9 mm

MT29F8G08ABBCAH4-IT:C by Micron Technology

MT29F8G08ABBCAH4-IT:C

Micron Technology

MT29F8G08ABBCAH4-IT:C by Micron Technology is a 1.8V SLC NAND flash memory with 1GX8 organization, 4K sectors, and 256K sector size. It operates in industrial temperatures (-40 to 85 °C) with parallel interface and 0.8mm terminal pitch. Ideal for applications requiring high memory density and fast access times.

30 ns

YES

NO

R-PBGA-B63

8589934592 bit

FLASH

8

4K

63

1073741824 words

1G

85 Cel

-40 Cel

1GX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

4K

PARALLEL

1.8

1.8

Not Qualified

YES

256K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F8G16ABACAWP-IT:C by Micron Technology

MT29F8G16ABACAWP-IT:C

Micron Technology

MT29F8G16ABACAWP-IT:C by Micron Technology is a 512MX16 SLC NAND flash memory with 3.3V programming voltage. It has a 128K word sector size and operates in industrial temperature range (-40 to 85 °C). Ideal for applications requiring high-density, fast access time, and low standby current.

25 ns

YES

NO

R-PDSO-G48

8589934592 bit

FLASH

16

4K

48

536870912 words

512M

85 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2K

PARALLEL

3/3.3

3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

35 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

MT29F8G08ABABAWP-AATX:B by Micron Technology

MT29F8G08ABABAWP-AATX:B

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Functions: 1;

YES

NO

10

100000 Write/Erase Cycles

R-PDSO-G48

18.4 mm

8589934592 bit

FLASH

8

1

2K

48

1073741824 words

1G

ASYNCHRONOUS

105 Cel

-40 Cel

1GX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4K

PARALLEL

NOT SPECIFIED

YES

1.2 mm

512K

.00005 Amp

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NO

SLC NAND TYPE

12 mm

MTFC16GAKAEEF-AAT by Micron Technology

MTFC16GAKAEEF-AAT

Micron Technology

MTFC16GAKAEEF-AAT by Micron Technology is a 16GX8 NAND flash memory with 17179869184 words capacity. Operating at 52 MHz, it has a thin profile grid array package suitable for industrial applications. With a temperature range of -40 to 105 °C, it offers fast parallel data transfer and low power consumption.

52 MHz

NO

NO

R-PBGA-B169

e4

18 mm

137438953472 bit

FLASH CARD

8

1

169

17179869184 words

16G

SYNCHRONOUS

105 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

TBGA

BGA169,14X28,20

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

2.7

YES

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

GOLD OVER NICKEL

BALL

.5 mm

BOTTOM

NO

NAND TYPE

14 mm

MTFC64GAJAEDN-AIT by Micron Technology

MTFC64GAJAEDN-AIT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 169; Package Code: LFBGA; Package Shape: RECTANGULAR; Terminal Pitch: .5 mm;

52 MHz

NO

NO

R-PBGA-B169

18 mm

549755813888 bit

FLASH CARD

8

1

169

68719476736 words

64G

SYNCHRONOUS

85 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

LFBGA

BGA169,14X28,20

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

2.7

YES

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

NO

NAND TYPE

14 mm

MTFC16GAKAEDQ-AAT by Micron Technology

MTFC16GAKAEDQ-AAT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Data Polling: NO;

52 MHz

NO

NO

R-PBGA-B100

e4

18 mm

137438953472 bit

FLASH CARD

8

1

100

17179869184 words

16G

SYNCHRONOUS

105 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

LBGA

BGA100,10X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

260

2.7

YES

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Gold (Au) - with Nickel (Ni) barrier

BALL

1 mm

BOTTOM

30

NO

NAND TYPE

14 mm

MTFC64GAJAEDQ-AIT by Micron Technology

MTFC64GAJAEDQ-AIT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;

52 MHz

NO

NO

R-PBGA-B100

18 mm

549755813888 bit

FLASH CARD

8

1

100

68719476736 words

64G

SYNCHRONOUS

85 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

LBGA

BGA100,10X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

NOT SPECIFIED

2.7

YES

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NO

NAND TYPE

14 mm

MTFC4GLGDQ-AITZ by Micron Technology

MTFC4GLGDQ-AITZ

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Alternate Memory Width: 4;

4

R-PBGA-B100

e1

18 mm

34359738368 bit

FLASH CARD

8

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

2.7

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

14 mm

MT29F16G08ABABAWP-AIT:B by Micron Technology

MT29F16G08ABABAWP-AIT:B

Micron Technology

Micron Technology's MT29F16G08ABABAWP-AIT:B is a 3.3V SLC NAND Flash Memory with 2GX8 organization, offering 4K page size and 100000 write/erase cycles endurance. Suitable for industrial applications, it operates in asynchronous mode with a temperature range of -40 to 85 °C.

YES

NO

10

100000 Write/Erase Cycles

R-PDSO-G48

e3

18.4 mm

17179869184 bit

FLASH

8

3

1

4K

48

2147483648 words

2G

ASYNCHRONOUS

85 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4K

PARALLEL

260

3.3

YES

1.2 mm

512K

.00005 Amp

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

30

YES

SLC NAND TYPE

12 mm

MT29F16G08ABCBBH1-12AIT:B by Micron Technology

MT29F16G08ABCBBH1-12AIT:B

Micron Technology

Micron Technology's MT29F16G08ABCBBH1-12AIT:B is a 2GX8 SLC NAND flash memory with 4K page size and 512K sector size. Operating at 3.3V, it offers industrial-grade endurance of 100k cycles. Suitable for applications requiring high-density, reliable storage solutions in industrial environments.

83MHZ CLOCK FREQUENCY IS AVAILABLE

YES

NO

10

100000 Write/Erase Cycles

R-PBGA-B100

18 mm

17179869184 bit

FLASH

8

1

4K

100

2147483648 words

2G

ASYNCHRONOUS/SYNCHRONOUS

85 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

VBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

4K

PARALLEL

NOT SPECIFIED

3.3

YES

1 mm

512K

.00005 Amp

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

YES

SLC NAND TYPE

12 mm

MT29F1G08ABAFAH4-ITE:F by Micron Technology

MT29F1G08ABAFAH4-ITE:F

Micron Technology

Micron Technology's MT29F1G08ABAFAH4-ITE:F is a 128MX8 SLC NAND flash memory with 1073741824 bit memory density. Operating at 3.3V, it has a temperature range of -40 to 85 °C and uses parallel interface technology. Ideal for industrial applications requiring high-speed data storage in compact devices.

R-PBGA-B63

11 mm

1073741824 bit

FLASH

8

1

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

SLC NAND TYPE

9 mm