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MT29F1G01ABBFDSF-IT:F

Micron Technology

MT29F1G01ABBFDSF-IT:F by Micron Technology

Micron Technology's MT29F1G01ABBFDSF-IT:F is a 128MX8 SLC NAND flash memory with 1.8V supply voltage, operating at up to 83MHz clock frequency. It offers 100000 write/erase cycles and uses SPI serial bus type, suitable for applications requiring high endurance and fast data transfer speeds.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 5,285 parts In-Stock

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Vyrian

USA . 5,077 parts In-Stock

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5,077

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Digiode

USA . 1,719 parts In-Stock

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1,719

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Nova Conductors

Japan . 300 parts In-Stock

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300

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,177 parts In-Stock

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$6.000

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1,177

$6.000

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AZTECH Wire

Italy . 414 parts In-Stock

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$14.390

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414

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Argo Parts USA

USA . 5,215 parts In-Stock

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Continental Prestige Electronics

USA . 1,561 parts In-Stock

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Corphita

USA . 1,502 parts In-Stock

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Microchip USA

USA . 109 parts In-Stock

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Aranea Global

USA . 50 parts In-Stock

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50

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Overview

Elevate your devices with the MT29F1G01ABBFDSF-IT:F by Micron Technology. As a top-tier manufacturer, Micron ensures unparalleled quality and reliability in their Flash Memory products. This sleek and compact memory solution offers seamless integration and high performance, making it ideal for a wide range of applications. Experience faster data transfer speeds, increased storage capacity, and enhanced overall efficiency with this innovative product. Upgrade to Micron Technology and unlock the potential of your devices today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protects the internal components of the flash memory, ensuring a longer lifespan.

Surface Mount: YES

Surface mount feature allows for easy and secure installation on circuit boards, making it suitable for compact electronic devices.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data transfer at high speeds with accurate timing, making the flash memory efficient for data-intensive applications.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a nominal supply voltage of 1.8V makes the flash memory energy-efficient and compatible with low-power devices.

Write Protection: HARDWARE/SOFTWARE

Having both hardware and software write protection options provides enhanced security for the data stored in the flash memory, preventing unauthorized access or modification.

Maximum Clock Frequency (fCLK): 83 MHz

With a maximum clock frequency of 83 MHz, the flash memory can process data swiftly and efficiently, making it suitable for high-speed data transfer requirements.

Endurance: 100000 Write/Erase Cycles

The flash memory's high endurance rating of 100,000 write/erase cycles ensures reliable and long-lasting performance for frequent data read/write operations.

Technical Specifications

Flash Memory MT29F1G01ABBFDSF-IT:F attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

83 MHz

Minimum Data Retention Time:

10

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G16

Length:

10.3 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

16

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128MX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Programming Voltage (V):

1.8

Maximum Seated Height:

2.65 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.00005 Amp

Maximum Supply Current:

35 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Type:

SLC NAND TYPE

Width:

7.5 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

MT29F1G01ABBFDSF-IT:F Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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