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MTFC16GAKAEEF-AAT

Micron Technology

MTFC16GAKAEEF-AAT by Micron Technology

MTFC16GAKAEEF-AAT by Micron Technology is a 16GX8 NAND flash memory with 17179869184 words capacity. Operating at 52 MHz, it has a thin profile grid array package suitable for industrial applications. With a temperature range of -40 to 105 °C, it offers fast parallel data transfer and low power consumption.

Median Price

$39.480

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

MTFC16GAKAEEF-AAT by Micron Technology
Compare Share

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 249 parts In-Stock

1+ parts

$39.480

100+ parts

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1k+ parts

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249

$39.480

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Distributors (In-Stock)

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Chip Stock

USA . 21,600 parts In-Stock

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21,600

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Vyrian

USA . 5,508 parts In-Stock

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5,508

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Digiode

USA . 2,301 parts In-Stock

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2,301

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Nova Conductors

Japan . 32 parts In-Stock

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32

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 362 parts In-Stock

1+ parts

$9.000

100+ parts

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10k+ parts

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362

$9.000

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AZTECH Wire

Italy . 114 parts In-Stock

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$13.060

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114

$13.060

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Corphita

USA . 443 parts In-Stock

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443

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Microchip USA

USA . 332 parts In-Stock

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332

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Aranea Global

USA . 100 parts In-Stock

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100

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Overview

Unlock the power of reliable and high-performance flash memory with the MTFC16GAKAEEF-AAT by Micron Technology. As a leader in the industry, Micron Technology delivers top-notch quality and cutting-edge technology in every product. Ideal for a wide range of applications, this flash memory offers unmatched value, benefits, and advantages to customers looking for fast and efficient storage solutions. Trust Micron Technology to provide you with the reliability and performance you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material is lightweight and durable, making the product easy to handle and resistant to damage during handling and installation.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data transfer at a consistent and reliable rate, improving overall performance and efficiency.

Maximum Clock Frequency (fCLK): 52 MHz

With a high clock frequency of 52 MHz, this product offers fast data transfer speeds, making it suitable for applications requiring quick access to data.

Minimum Supply Voltage (Vsup): 2.7 V

Low minimum supply voltage requirement of 2.7 V helps in power efficiency and extends the battery life of devices using this flash memory.

Temperature Grade: INDUSTRIAL

Industrial temperature grade ensures the product's reliability and performance in harsh environments with varying temperature conditions.

Memory Density: 137438953472 bit

High memory density of 137438953472 bits provides ample storage capacity for storing large amounts of data, making it suitable for high-demand applications.

Technical Specifications

Flash Memory MTFC16GAKAEEF-AAT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

52 MHz

Command User Interface:

NO

Data Polling:

NO

JESD-30 Code:

R-PBGA-B169

JESD-609 Code:

e4

Length:

18 mm

Memory Density:

137438953472 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

169

No. of Words:

17179869184 words

No. of Words Code:

16G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA169,14X28,20

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

PARALLEL

Programming Voltage (V):

2.7

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

GOLD OVER NICKEL

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

NAND TYPE

Width:

14 mm

Trade Compliance

MTFC16GAKAEEF-AAT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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