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MT35XU512ABA1G12-0AATTR

Micron Technology

MT35XU512ABA1G12-0AATTR by Micron Technology

Micron Technology's MT35XU512ABA1G12-0AATTR is a 64MX8 NOR flash memory with 67108864 words. Operating at 200 MHz, it has a supply voltage range of 1.7V to 2V and endurance of 100000 cycles. Ideal for automotive applications due to AEC-Q100 screening level and -40°C to 105°C operating temperature range.

Median Price

$6.500

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 2,500 parts In-Stock

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$6.500

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$6.500

Distributors (In-Stock)

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Chip Stock

USA . 18,400 parts In-Stock

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Vyrian

USA . 2,849 parts In-Stock

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Digiode

USA . 381 parts In-Stock

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Nova Conductors

Japan . 26 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,154 parts In-Stock

1+ parts

$3.000

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1,154

$3.000

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Corohmni

South Africa . 998 parts In-Stock

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$3.037

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998

$3.037

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AZTECH Wire

Italy . 1,033 parts In-Stock

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$8.540

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1,033

$8.540

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Semicontronic

India . 1,099 parts In-Stock

1+ parts

$11.000

100+ parts

$10.725

1k+ parts

$10.670

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1,099

$11.000

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$10.670

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Continental Prestige Electronics

USA . 6,993 parts In-Stock

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Argo Parts USA

USA . 2,746 parts In-Stock

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Corphita

USA . 2,272 parts In-Stock

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Microchip USA

USA . 1,814 parts In-Stock

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Bastille Electronics

Australia . 97 parts In-Stock

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Overview

Discover the cutting-edge MT35XU512ABA1G12-0AATTR by Micron Technology, a top-of-the-line flash memory solution designed to elevate your tech experience. With a reputation for excellence, Micron Technology ensures unmatched quality and reliability in every product they create. Ideal for a wide range of applications, this flash memory offers lightning-fast speeds and optimal performance. Say goodbye to slow loading times and hello to seamless data storage with the MT35XU512ABA1G12-0AATTR. Upgrade your devices today and experience the difference with Micron Technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the flash memory, ensuring reliable performance over time.

Surface Mount: YES

Easy to integrate and mount on printed circuit boards, simplifying the assembly process.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfer speeds and improved performance.

Nominal Supply Voltage / Vsup (V): 1.8

Low power consumption at a nominal voltage, making it energy efficient.

Write Protection: HARDWARE

Enhanced security with hardware-based write protection to prevent unauthorized access or data modification.

Endurance: 100000 Write/Erase Cycles

High endurance capability for frequent data read/write operations, ensuring longevity and reliability.

Memory Density: 536870912 bit

High memory density for storing large amounts of data in a compact form factor.

Technical Specifications

Flash Memory MT35XU512ABA1G12-0AATTR attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

200 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PBGA-B24

JESD-609 Code:

e1

Length:

8 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

24

No. of Words:

67108864 words

No. of Words Code:

64M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA24,5X5,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

1.8

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Serial Bus Type:

SPI

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NOR TYPE

Width:

6 mm

Write Protection:

HARDWARE

Trade Compliance

MT35XU512ABA1G12-0AATTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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