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MT35XU512ABA1G12-0AAT

Micron Technology

MT35XU512ABA1G12-0AAT by Micron Technology

MT35XU512ABA1G12-0AAT by Micron Technology is a 512M Flash Memory with 536870912 bit density. Operating at 166 MHz, it has a supply voltage range of 1.7V to 2V and supports industrial temperature grade applications. The memory IC features a thin profile grid array package style suitable for synchronous operation in automotive electronics.

Median Price

$11.549

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,122 parts In-Stock

1+ parts

$7.148

100+ parts

-

1k+ parts

-

10k+ parts

-

1,122

$7.148

-

-

-

Mouser Electronics

USA . 1,027 parts In-Stock

1+ parts

$9.250

100+ parts

$7.770

1k+ parts

$7.300

10k+ parts

-

1,027

$9.250

$7.770

$7.300

-

Element14

Singapore . 533 parts In-Stock

1+ parts

$9.713

100+ parts

$8.254

1k+ parts

$8.002

10k+ parts

-

533

$9.713

$8.254

$8.002

-

Farnell

UK . 533 parts In-Stock

1+ parts

$13.385

100+ parts

$9.402

1k+ parts

$9.274

10k+ parts

-

533

$13.385

$9.402

$9.274

-

DigiKey

USA . 2 parts In-Stock

1+ parts

$16.500

100+ parts

-

1k+ parts

-

10k+ parts

-

2

$16.500

-

-

-

Newark

USA . 1,112 parts In-Stock

1+ parts

$18.960

100+ parts

-

1k+ parts

-

10k+ parts

-

1,112

$18.960

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,429 parts In-Stock

1+ parts

$6.441

100+ parts

-

1k+ parts

-

10k+ parts

-

1,429

$6.441

-

-

-

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$9.385

100+ parts

-

1k+ parts

-

10k+ parts

-

100

$9.385

-

-

-

Chip Stock

USA . 2,770 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,770

-

-

-

-

Vyrian

USA . 1,325 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,325

-

-

-

-

Bristol Electronics

USA . 610 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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610

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,359 parts In-Stock

1+ parts

$5.760

100+ parts

-

1k+ parts

-

10k+ parts

-

1,359

$5.760

-

-

-

Semicontronic

India . 1,182 parts In-Stock

1+ parts

$5.760

100+ parts

$5.616

1k+ parts

$5.587

10k+ parts

-

1,182

$5.760

$5.616

$5.587

-

Aztec Data Supply Inc.

USA . 2,168 parts In-Stock

1+ parts

$5.840

100+ parts

-

1k+ parts

-

10k+ parts

-

2,168

$5.840

-

-

-

Corphita

USA . 2,028 parts In-Stock

1+ parts

$6.102

100+ parts

-

1k+ parts

-

10k+ parts

-

2,028

$6.102

-

-

-

Aranea Global

USA . 100 parts In-Stock

1+ parts

$9.197

100+ parts

-

1k+ parts

$8.829

10k+ parts

-

100

$9.197

-

$8.829

-

Continental Prestige Electronics

USA . 3,512 parts In-Stock

1+ parts

$9.385

100+ parts

-

1k+ parts

-

10k+ parts

$9.197

3,512

$9.385

-

-

$9.197

Corohmni

South Africa . 275 parts In-Stock

1+ parts

$10.683

100+ parts

-

1k+ parts

-

10k+ parts

-

275

$10.683

-

-

-

Infinite Electronics LLP (Excess)

. 6,120 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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6,120

-

-

-

-

Argo Parts USA

USA . 853 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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853

-

-

-

-

Overview

Elevate your tech game with Micron Technology's MT35XU512ABA1G12-0AAT Flash Memory. This innovative product boasts top-notch quality and reliability, making it a standout choice for industrial applications. With its cutting-edge technology and impressive memory density of 536,870,912 bits, this flash memory offers unmatched performance and efficiency. Say goodbye to slow loading times and hello to seamless operations with Micron Technology's MT35XU512ABA1G12-0AAT - the ultimate solution for all your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable plastic and epoxy construction ensures the longevity and reliability of the product.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfer and more efficient performance.

Nominal Supply Voltage / Vsup (V): 1.8

Efficient power consumption at a low supply voltage of 1.8V.

Maximum Operating Temperature: 105 °C

Capable of operating at high temperatures without compromising performance.

Technology: CMOS

Complementary Metal-Oxide-Semiconductor technology offers low power consumption and high noise immunity.

Memory Density: 536870912 bit

High memory density allows for storing a large amount of data in a compact form factor.

Technical Specifications

Flash Memory MT35XU512ABA1G12-0AAT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

166 MHz

JESD-30 Code:

R-PBGA-B24

JESD-609 Code:

e1

Length:

8 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

24

No. of Words:

536870912 words

No. of Words Code:

512M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512MX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

1.8

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

6 mm

Trade Compliance

MT35XU512ABA1G12-0AAT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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