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MT35XU02GCBA1G12-0AAT

Micron Technology

MT35XU02GCBA1G12-0AAT by Micron Technology

MT35XU02GCBA1G12-0AAT by Micron Technology is a 2GX1 Flash Memory with 166 MHz clock frequency, operating at -40 to 105 °C. Ideal for industrial applications, it features a 24-terminal grid array package and operates at 1.7-2V supply voltage range.

Median Price

$48.455

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 974 parts In-Stock

1+ parts

$28.520

100+ parts

$23.930

1k+ parts

$23.360

10k+ parts

-

974

$28.520

$23.930

$23.360

-

Farnell

UK . 1,122 parts In-Stock

1+ parts

$35.250

100+ parts

$26.190

1k+ parts

-

10k+ parts

-

1,122

$35.250

$26.190

-

-

DigiKey

USA . 11 parts In-Stock

1+ parts

$61.660

100+ parts

-

1k+ parts

-

10k+ parts

-

11

$61.660

-

-

-

Newark

USA . 684 parts In-Stock

1+ parts

$91.720

100+ parts

-

1k+ parts

-

10k+ parts

-

684

$91.720

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$39.068

100+ parts

-

1k+ parts

-

10k+ parts

-

10

$39.068

-

-

-

Chip Stock

USA . 14,100 parts In-Stock

1+ parts

-

100+ parts

-

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-

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14,100

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-

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NAC Semi

USA . 1,278 parts In-Stock

1+ parts

-

100+ parts

-

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-

10k+ parts

$44.210

1,278

-

-

-

$44.210

Digiode

USA . 1,086 parts In-Stock

1+ parts

-

100+ parts

-

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-

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1,086

-

-

-

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Bristol Electronics

USA . 794 parts In-Stock

1+ parts

-

100+ parts

-

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794

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Vyrian

USA . 469 parts In-Stock

1+ parts

-

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-

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469

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 2,755 parts In-Stock

1+ parts

$3.410

100+ parts

-

1k+ parts

-

10k+ parts

-

2,755

$3.410

-

-

-

Corohmni

South Africa . 84 parts In-Stock

1+ parts

$5.012

100+ parts

-

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-

10k+ parts

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84

$5.012

-

-

-

Semicontronic

India . 473 parts In-Stock

1+ parts

$19.740

100+ parts

$19.246

1k+ parts

$19.148

10k+ parts

-

473

$19.740

$19.246

$19.148

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Ampacity Inc.

Singapore . 498 parts In-Stock

1+ parts

$20.790

100+ parts

-

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-

10k+ parts

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498

$20.790

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-

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Aranea Global

USA . 100 parts In-Stock

1+ parts

$38.286

100+ parts

-

1k+ parts

$36.755

10k+ parts

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100

$38.286

-

$36.755

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Continental Prestige Electronics

USA . 2,588 parts In-Stock

1+ parts

$39.068

100+ parts

-

1k+ parts

-

10k+ parts

$38.286

2,588

$39.068

-

-

$38.286

Advanced Electronics

New Zealand . 5,000 parts In-Stock

1+ parts

$39.849

100+ parts

$39.849

1k+ parts

$39.849

10k+ parts

-

5,000

$39.849

$39.849

$39.849

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Infinite Electronics LLP (Excess)

. 802 parts In-Stock

1+ parts

-

100+ parts

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802

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Corphita

USA . 793 parts In-Stock

1+ parts

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793

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Argo Parts USA

USA . 581 parts In-Stock

1+ parts

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581

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Authorized Procurement Solutions

USA . 207 parts In-Stock

1+ parts

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207

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Overview

Elevate your technology with the MT35XU02GCBA1G12-0AAT by Micron Technology. This top-notch Flash Memory device boasts superior quality and reliability, making it a standout choice for various applications. With a sleek package body and advanced features like synchronous operation and industrial temperature grade, this product offers unmatched value to customers seeking high-performance memory solutions. Trust Micron Technology to deliver cutting-edge technology that pushes boundaries and exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product easy to handle and resistant to damage.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfer speeds and more efficient processing.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a low voltage helps reduce power consumption and heat generation.

Maximum Operating Temperature: 105 °C

With a high maximum operating temperature, this product can withstand harsh environmental conditions.

Memory Density: 2147483648 bit

This high memory density allows for storing a large amount of data in a compact space.

Technical Specifications

Flash Memory MT35XU02GCBA1G12-0AAT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

166 MHz

JESD-30 Code:

R-PBGA-B24

JESD-609 Code:

e1

Length:

8 mm

Memory Density:

2147483648 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

24

No. of Words:

2147483648 words

No. of Words Code:

2G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2GX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

1.8

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

6 mm

Trade Compliance

MT35XU02GCBA1G12-0AAT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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