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MT35XU02GCBA2G12-0AUT

Micron Technology

MT35XU02GCBA2G12-0AUT by Micron Technology

Micron Technology's MT35XU02GCBA2G12-0AUT is a 256MX8 flash memory IC with 1.8V supply voltage, operating at up to 200MHz clock frequency. Designed for automotive applications, it features AEC-Q100 screening level and operates in a temperature range of -40°C to 125°C.

Median Price

$34.333

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,123 parts In-Stock

1+ parts

$31.150

100+ parts

-

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10k+ parts

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1,123

$31.150

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-

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Nova Conductors

Japan . 29 parts In-Stock

1+ parts

$37.515

100+ parts

-

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29

$37.515

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Flip Electronics

USA . 56,000 parts In-Stock

1+ parts

-

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56,000

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-

Chip Stock

USA . 13,800 parts In-Stock

1+ parts

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13,800

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Vyrian

USA . 3,253 parts In-Stock

1+ parts

-

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3,253

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 11 parts In-Stock

1+ parts

$2.188

100+ parts

-

1k+ parts

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11

$2.188

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-

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Aztec Data Supply Inc.

USA . 3,273 parts In-Stock

1+ parts

$4.393

100+ parts

-

1k+ parts

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3,273

$4.393

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-

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AZTECH Wire

Italy . 893 parts In-Stock

1+ parts

$14.644

100+ parts

-

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893

$14.644

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Ampacity Inc.

Singapore . 951 parts In-Stock

1+ parts

$27.870

100+ parts

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951

$27.870

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Corphita

USA . 1,446 parts In-Stock

1+ parts

$29.511

100+ parts

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1,446

$29.511

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Aranea Global

USA . 100 parts In-Stock

1+ parts

$36.765

100+ parts

-

1k+ parts

$35.294

10k+ parts

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100

$36.765

-

$35.294

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Continental Prestige Electronics

USA . 1,180 parts In-Stock

1+ parts

$37.515

100+ parts

-

1k+ parts

-

10k+ parts

$36.765

1,180

$37.515

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-

$36.765

QUARKTWIN TECHNOLOGY LTD

USA . 9,495 parts In-Stock

1+ parts

-

100+ parts

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9,495

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Argo Parts USA

USA . 834 parts In-Stock

1+ parts

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100+ parts

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834

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Overview

Experience the cutting-edge technology of Micron Technology with the MT35XU02GCBA2G12-0AUT flash memory. Designed with top-quality materials and advanced features, this product offers unparalleled reliability and performance. Ideal for automotive applications, this memory device ensures seamless operation even in extreme conditions. Enhance your systems with the innovative capabilities of Micron's flash memory and enjoy the benefits of faster processing speeds and increased storage capacity. Upgrade to Micron today and elevate your experience to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a lightweight and durable housing for the flash memory, making it suitable for various applications including automotive.

Nominal Supply Voltage (Vsup): 1.8V

Efficient power usage and compatibility with common voltage levels in electronic devices.

Maximum Operating Temperature: 125 °C

Can withstand high temperature environments, ideal for automotive and industrial applications.

Organization: 256MX8

Optimized organization for efficient data access and storage in the flash memory.

Maximum Clock Frequency (fCLK): 200 MHz

High clock frequency allows for fast data transfer and processing speeds.

Memory Density: 2147483648 bit

High memory density for storing large amounts of data in a compact form factor.

Technical Specifications

Flash Memory MT35XU02GCBA2G12-0AUT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

200 MHz

JESD-30 Code:

R-PBGA-B24

JESD-609 Code:

e1

Length:

8 mm

Memory Density:

2147483648 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

24

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

1.8

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

6 mm

Trade Compliance

MT35XU02GCBA2G12-0AUT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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