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MT35XU512ABA1G12-0SIT

Micron Technology

MT35XU512ABA1G12-0SIT by Micron Technology

MT35XU512ABA1G12-0SIT by Micron Technology is a 512M Flash Memory with 536870912 bit density. It operates at 166 MHz clock frequency, has a thin profile GRID ARRAY package, and supports a programming voltage of 1.8V. Ideal for industrial applications requiring high memory capacity and fast data processing in compact devices.

Median Price

$9.753

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,983 parts In-Stock

1+ parts

$8.060

100+ parts

$6.710

1k+ parts

$6.410

10k+ parts

$5.270

2,983

$8.060

$6.710

$6.410

$5.270

Arrow

USA . 2,793 parts In-Stock

1+ parts

$9.753

100+ parts

$8.573

1k+ parts

-

10k+ parts

-

2,793

$9.753

$8.573

-

-

Verical

USA . 2,793 parts In-Stock

1+ parts

$10.625

100+ parts

-

1k+ parts

-

10k+ parts

-

2,793

$10.625

-

-

-

Newark

USA . 923 parts In-Stock

1+ parts

$17.830

100+ parts

$15.660

1k+ parts

$14.910

10k+ parts

-

923

$17.830

$15.660

$14.910

-

Future Electronics

Canada . 1,122 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$4.450

10k+ parts

-

1,122

-

-

$4.450

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 941 parts In-Stock

1+ parts

$7.429

100+ parts

-

1k+ parts

-

10k+ parts

-

941

$7.429

-

-

-

Vyrian

USA . 1,478 parts In-Stock

1+ parts

$7.820

100+ parts

-

1k+ parts

-

10k+ parts

-

1,478

$7.820

-

-

-

Chip Stock

USA . 24,200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

24,200

-

-

-

-

IBS Electronics

USA . 1,122 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$5.785

1,122

-

-

-

$5.785

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10

-

-

-

-

Elcom Components

USA . 7 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7

-

-

-

-

ComSIT Distribution GmbH

Germany . 2 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 67 parts In-Stock

1+ parts

$3.303

100+ parts

-

1k+ parts

-

10k+ parts

-

67

$3.303

-

-

-

Ampacity Inc.

Singapore . 2,267 parts In-Stock

1+ parts

$6.610

100+ parts

-

1k+ parts

-

10k+ parts

-

2,267

$6.610

-

-

-

Corphita

USA . 1,383 parts In-Stock

1+ parts

$7.038

100+ parts

-

1k+ parts

-

10k+ parts

-

1,383

$7.038

-

-

-

A-Z Elektronik GmbH

Germany . 3,576 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,576

-

-

-

-

Continental Prestige Electronics

USA . 3,253 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,253

-

-

-

-

Argo Parts USA

USA . 1,951 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,951

-

-

-

-

Infinite Electronics LLP (Excess)

. 526 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

526

-

-

-

-

Aranea Global

USA . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

500

-

-

-

-

Formix International (Excess)

India . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

500

-

-

-

-

GreenTree Electronics

Israel . 50 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

50

-

-

-

-

Overview

Experience the cutting-edge technology of Micron Technology with the MT35XU512ABA1G12-0SIT Flash Memory. This innovative product offers unparalleled reliability and performance, making it ideal for a wide range of applications. From industrial to consumer electronics, this flash memory provides lightning-fast data storage and retrieval. Trust in Micron Technology's expertise to deliver top-quality products that exceed expectations. Upgrade your devices with the MT35XU512ABA1G12-0SIT and enjoy the benefits of superior memory solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and reliability for the flash memory, ensuring it can withstand various environmental conditions.

Surface Mount: YES

Surface mount design allows for easy and convenient installation on circuit boards, saving space and simplifying manufacturing processes.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data is transferred at a consistent and predictable rate, improving overall performance and reliability of the flash memory.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a nominal supply voltage of 1.8V helps in reducing power consumption and heat generation, making the flash memory more energy-efficient.

Maximum Clock Frequency (fCLK): 166 MHz

With a high maximum clock frequency of 166 MHz, this flash memory offers fast data transfer speeds, making it suitable for applications requiring quick access to large amounts of data.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature range ensures reliable operation in harsh environments, making this flash memory suitable for industrial applications where temperature fluctuations are common.

Memory IC Type: FLASH

Being a flash memory IC, it offers non-volatile storage, high-speed read/write operations, and high endurance, making it a reliable choice for storing critical data.

Technical Specifications

Flash Memory MT35XU512ABA1G12-0SIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

166 MHz

JESD-30 Code:

R-PBGA-B24

JESD-609 Code:

e1

Length:

8 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

24

No. of Words:

536870912 words

No. of Words Code:

512M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512MX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

1.8

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

6 mm

Trade Compliance

MT35XU512ABA1G12-0SIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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