Loading...

MT35XL512ABA1G12-0AAT

Micron Technology

MT35XL512ABA1G12-0AAT by Micron Technology

MT35XL512ABA1G12-0AAT by Micron Technology is a 512M Flash Memory with 536870912 bit density. It operates at 133 MHz clock frequency, has a thin profile grid array package style, and supports synchronous mode. Ideal for industrial applications requiring high memory capacity and reliable performance in harsh environments.

Median Price

$16.500

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 193 parts In-Stock

1+ parts

$16.500

100+ parts

$14.118

1k+ parts

-

10k+ parts

-

193

$16.500

$14.118

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 795 parts In-Stock

1+ parts

$6.441

100+ parts

-

1k+ parts

-

10k+ parts

-

795

$6.441

-

-

-

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$10.463

100+ parts

-

1k+ parts

-

10k+ parts

-

100

$10.463

-

-

-

Chip Stock

USA . 12,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,800

-

-

-

-

Vyrian

USA . 5,160 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,160

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 1,328 parts In-Stock

1+ parts

$2.940

100+ parts

-

1k+ parts

-

10k+ parts

-

1,328

$2.940

-

-

-

Semicontronic

India . 895 parts In-Stock

1+ parts

$5.760

100+ parts

$5.616

1k+ parts

$5.587

10k+ parts

-

895

$5.760

$5.616

$5.587

-

Ampacity Inc.

Singapore . 841 parts In-Stock

1+ parts

$5.760

100+ parts

-

1k+ parts

-

10k+ parts

-

841

$5.760

-

-

-

Corphita

USA . 951 parts In-Stock

1+ parts

$6.102

100+ parts

-

1k+ parts

-

10k+ parts

-

951

$6.102

-

-

-

AZTECH Wire

Italy . 764 parts In-Stock

1+ parts

$9.834

100+ parts

-

1k+ parts

-

10k+ parts

-

764

$9.834

-

-

-

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$10.463

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

$10.463

-

-

-

Continental Prestige Electronics

USA . 95 parts In-Stock

1+ parts

$10.463

100+ parts

-

1k+ parts

-

10k+ parts

$10.254

95

$10.463

-

-

$10.254

Corohmni

South Africa . 9 parts In-Stock

1+ parts

$11.565

100+ parts

-

1k+ parts

-

10k+ parts

-

9

$11.565

-

-

-

Argo Parts USA

USA . 4,246 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,246

-

-

-

-

Overview

Enhance your device's performance with the MT35XL512ABA1G12-0AAT by Micron Technology. This cutting-edge Flash Memory product offers unparalleled quality and reliability, thanks to Micron Technology's years of expertise in the industry. Ideal for a wide range of applications, this product provides customers with exceptional value, benefits, and advantages. Upgrade your technology today with the MT35XL512ABA1G12-0AAT and experience enhanced speed, efficiency, and durability like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the flash memory, making it suitable for various environments.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for efficient data transfer and synchronization, enhancing performance.

Maximum Operating Temperature: 105 °C

With a high maximum operating temperature, this flash memory can withstand extended use in elevated temperature conditions.

Maximum Clock Frequency (fCLK): 133 MHz

A high clock frequency enables fast data processing and access speeds, improving overall performance.

Memory Density: 536870912 bit

High memory density allows for storing a large amount of data, making this flash memory suitable for applications requiring extensive storage capacity.

Technical Specifications

Flash Memory MT35XL512ABA1G12-0AAT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

133 MHz

JESD-30 Code:

R-PBGA-B24

JESD-609 Code:

e1

Length:

8 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

24

No. of Words:

536870912 words

No. of Words Code:

512M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512MX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

3

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

6 mm

Trade Compliance

MT35XL512ABA1G12-0AAT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19