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MT35XU256ABA1G12-0AUT

Micron Technology

MT35XU256ABA1G12-0AUT by Micron Technology

Micron Technology's MT35XU256ABA1G12-0AUT is a 256MX1 flash memory with 268Mbit density. Operating at 166MHz, it has a supply voltage range of 1.7V to 2V and supports automotive applications. With AEC-Q100 screening, this synchronous memory in grid array package offers high performance in harsh environments.

Median Price

$17.950

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 1,122 parts In-Stock

1+ parts

$10.970

100+ parts

-

1k+ parts

-

10k+ parts

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1,122

$10.970

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Element14

Singapore . 1,122 parts In-Stock

1+ parts

$11.880

100+ parts

$10.200

1k+ parts

$9.620

10k+ parts

-

1,122

$11.880

$10.200

$9.620

-

DigiKey

USA . 544 parts In-Stock

1+ parts

$24.020

100+ parts

$20.503

1k+ parts

$19.320

10k+ parts

-

544

$24.020

$20.503

$19.320

-

Newark

USA . 1,122 parts In-Stock

1+ parts

$28.000

100+ parts

-

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10k+ parts

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1,122

$28.000

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 757 parts In-Stock

1+ parts

$5.424

100+ parts

-

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757

$5.424

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-

-

Chip Stock

USA . 20,200 parts In-Stock

1+ parts

-

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20,200

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Vyrian

USA . 3,142 parts In-Stock

1+ parts

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3,142

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Nova Conductors

Japan . 800 parts In-Stock

1+ parts

-

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800

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 638 parts In-Stock

1+ parts

$5.139

100+ parts

-

1k+ parts

-

10k+ parts

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638

$5.139

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-

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Ampacity Inc.

Singapore . 522 parts In-Stock

1+ parts

$10.560

100+ parts

-

1k+ parts

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10k+ parts

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522

$10.560

-

-

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A-Z Elektronik GmbH

Germany . 6,231 parts In-Stock

1+ parts

-

100+ parts

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6,231

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Continental Prestige Electronics

USA . 3,647 parts In-Stock

1+ parts

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3,647

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

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2,000

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Argo Parts USA

USA . 248 parts In-Stock

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248

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Overview

Unlock the power of cutting-edge technology with the MT35XU256ABA1G12-0AUT by Micron Technology. This high-quality flash memory device offers unparalleled performance and reliability, making it the ideal choice for a wide range of applications. With its advanced features and automotive-grade temperature rating, this product delivers exceptional value and benefits to customers seeking top-notch memory solutions. Trust Micron Technology to provide you with the best in flash memory technology for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the flash memory, making it suitable for various environments.

Surface Mount: YES

Allows easy installation on PCBs, saving time and effort.

Nominal Supply Voltage / Vsup (V): 1.8

Optimal voltage for efficient performance and power consumption.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for automotive applications.

Technology: CMOS

CMOS technology provides low power consumption and high speed operation.

Memory Density: 268435456 bit

High memory density allows for storing large amounts of data in a compact form factor.

Technical Specifications

Flash Memory MT35XU256ABA1G12-0AUT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

166 MHz

JESD-30 Code:

R-PBGA-B24

JESD-609 Code:

e1

Length:

8 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

24

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256MX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

1.8

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

6 mm

Trade Compliance

MT35XU256ABA1G12-0AUT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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