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MT35XU02GCBA1G12-0AUT

Micron Technology

MT35XU02GCBA1G12-0AUT by Micron Technology

Micron Technology's MT35XU02GCBA1G12-0AUT is a 2GX1 FLASH Memory IC with 2147483648-bit memory density. Operating at 166 MHz, it has a supply voltage range of 1.7V to 2V and is AEC-Q100 compliant for automotive applications. This thin-profile GRID ARRAY package offers synchronous operation and serial interface, making it ideal for high-performance automotive electronics.

Median Price

$39.920

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 122 parts In-Stock

1+ parts

$39.920

100+ parts

$30.420

1k+ parts

$30.010

10k+ parts

-

122

$39.920

$30.420

$30.010

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 900 parts In-Stock

1+ parts

$37.515

100+ parts

-

1k+ parts

-

10k+ parts

-

900

$37.515

-

-

-

Digiode

USA . 726 parts In-Stock

1+ parts

$37.924

100+ parts

-

1k+ parts

-

10k+ parts

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726

$37.924

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-

-

Chip Stock

USA . 24,900 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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24,900

-

-

-

-

Vyrian

USA . 696 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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696

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 831 parts In-Stock

1+ parts

$4.100

100+ parts

-

1k+ parts

-

10k+ parts

-

831

$4.100

-

-

-

Corohmni

South Africa . 542 parts In-Stock

1+ parts

$4.898

100+ parts

-

1k+ parts

-

10k+ parts

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542

$4.898

-

-

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Ampacity Inc.

Singapore . 624 parts In-Stock

1+ parts

$33.930

100+ parts

-

1k+ parts

-

10k+ parts

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624

$33.930

-

-

-

Corphita

USA . 162 parts In-Stock

1+ parts

$35.928

100+ parts

-

1k+ parts

-

10k+ parts

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162

$35.928

-

-

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Continental Prestige Electronics

USA . 5,269 parts In-Stock

1+ parts

$37.515

100+ parts

-

1k+ parts

-

10k+ parts

$36.765

5,269

$37.515

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-

$36.765

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$37.515

100+ parts

-

1k+ parts

-

10k+ parts

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2,000

$37.515

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-

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Argo Parts USA

USA . 3,540 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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3,540

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Overview

Unlock the power of cutting-edge technology with the MT35XU02GCBA1G12-0AUT by Micron Technology. As a leader in flash memory, Micron ensures top-notch quality and reliability for automotive applications. This compact yet powerful memory device offers seamless operation, high performance, and excellent durability. Enhance your automotive systems with this innovative solution and experience unmatched value and efficiency. Trust Micron to deliver superior products that elevate your technology to the next level. Elevate your automotive systems with Micron Technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection for the flash memory component, making it resistant to wear and tear.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfer speeds and more efficient communication with the host device.

Nominal Supply Voltage / Vsup (V): 1.8

The low supply voltage of 1.8V helps in reducing power consumption and improving overall energy efficiency of the flash memory.

Maximum Clock Frequency (fCLK): 166 MHz

The high clock frequency allows for faster processing of data and operations, enhancing the performance of the flash memory.

Memory Density: 2147483648 bit

With a high memory density of 2147483648 bits, this flash memory offers ample storage capacity for storing data and information efficiently.

Technical Specifications

Flash Memory MT35XU02GCBA1G12-0AUT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

166 MHz

JESD-30 Code:

R-PBGA-B24

JESD-609 Code:

e1

Length:

8 mm

Memory Density:

2147483648 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

24

No. of Words:

2147483648 words

No. of Words Code:

2G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2GX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

1.8

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

6 mm

Trade Compliance

MT35XU02GCBA1G12-0AUT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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