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RECTANGULAR Flash Memory 1,448

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
M50FW080K5G by STMicroelectronics

M50FW080K5G

STMicroelectronics

M50FW080K5G from STMicroelectronics is a NOR flash memory with 1M words capacity, operating at 3.3V. It features a fast access time of 11 ns and supports asynchronous mode. Ideal for embedded applications, it operates b/w -20 °C to 85 °C in a compact chip carrier package.

11 ns

YES

NO

R-PQCC-J32

e3

13.97 mm

8388608 bit

FLASH

8

1

16

32

1048576 words

1M

ASYNCHRONOUS

85 Cel

-20 Cel

1MX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3.3

3

Not Qualified

3.56 mm

64K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

MATTE TIN

J BEND

1.27 mm

QUAD

NO

NOR TYPE

11.43 mm

M50FW080N5G by STMicroelectronics

M50FW080N5G

STMicroelectronics

M50FW080N5G from STMicroelectronics is a 1Mx8 NOR Flash memory with a 3.3V supply, ideal for asynchronous applications. It features a max access time of 11 ns and operates b/w -20 °C to 85 °C. This compact SOIC package is perfect for space-constrained designs.

11 ns

YES

NO

R-PDSO-G40

e6

18.4 mm

8388608 bit

FLASH

8

3

1

16

40

1048576 words

1M

ASYNCHRONOUS

85 Cel

-20 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

64K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN BISMUTH

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

M50FW080NB5G by STMicroelectronics

M50FW080NB5G

STMicroelectronics

M50FW080NB5G from STMicroelectronics is a 1M x 8 NOR Flash memory with a compact SOIC package, operating at 3.3V. It features fast access times of 11 ns and supports asynchronous operation, making it ideal for embedded applications. With a wide temp range (-20 °C to 85 °C), it's perfect for diverse environments.

11 ns

YES

NO

R-PDSO-G32

e3/e6

12.4 mm

8388608 bit

FLASH

8

1

16

32

1048576 words

1M

ASYNCHRONOUS

85 Cel

-20 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

3.3

3

Not Qualified

1.2 mm

64K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NO

NOR TYPE

8 mm

XCF04SVOG20C by Xilinx

XCF04SVOG20C

Xilinx

Xilinx XCF04SVOG20C is a 4MX1 NOR flash memory with 4194304-bit density. Operating at 3.3V, it offers 20000 write/erase cycles and supports synchronous mode up to 33MHz clock frequency. Ideal for configuration memory in applications requiring high endurance and low standby current.

33 MHz

20

20000 Write/Erase Cycles

R-PDSO-G20

e3

6.5024 mm

4194304 bit

CONFIGURATION MEMORY

1

3

1

20

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX1

PLASTIC/EPOXY

TSSOP

TSSOP20,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

1.8/3.3,3.3

3.3

Not Qualified

1.19 mm

.01 Amp

Flash Memories

10 mA

3.6 V

3 V

3.3

YES

CMOS

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

30

NOR TYPE

4.4 mm

HARDWARE

AT45DB321C-TC by Atmel

AT45DB321C-TC

Atmel

Atmel's AT45DB321C-TC is a 32M NOR flash memory with 40MHz clock frequency, SPI serial bus, and hardware write protection. It operates at 3V, has 28 terminals in a small outline package, and is ideal for commercial applications requiring reliable non-volatile memory storage.

ORGANISED AS 8192 PAGES OF 528 BYTES EACH

40 MHz

R-PDSO-G28

e0

11.8 mm

33554432 bit

FLASH

1

3

1

28

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX1

PLASTIC/EPOXY

TSOP1

TSSOP28,.53,22

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

3/3.3

2.7

Not Qualified

1.2 mm

SPI

.000015 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.55 mm

DUAL

NOR TYPE

8 mm

HARDWARE

AT45DB041B-SU by Atmel

AT45DB041B-SU

Atmel

Atmel's AT45DB041B-SU is a 4Mx1 NOR flash memory with SPI serial bus, operating at 20MHz. It has a supply voltage range of 2.7V to 3.6V and offers hardware write protection. Ideal for industrial applications requiring reliable non-volatile memory storage in compact designs.

ORGANIZED AS 2048 PAGES OF 264 BYTES EACH

20 MHz

R-PDSO-G8

e3

5.29 mm

4194304 bit

FLASH

1

1

1

8

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX1

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/3.3

2.7

Not Qualified

2.16 mm

SPI

.00001 Amp

Flash Memories

10 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

40

NOR TYPE

5.24 mm

HARDWARE

M50FW016N5G by STMicroelectronics

M50FW016N5G

STMicroelectronics

M50FW016N5G from STMicroelectronics is a 16Mb NOR Flash memory with a synchronous operating mode and a max access time of 11 ns. It operates at 3.0-3.6V, features a compact SOIC package, and is ideal for embedded applications requiring reliable data storage. Its dual terminal design ensures efficient surface mounting in space-constrained environments.

11 ns

R-PDSO-G40

e6

18.4 mm

16777216 bit

FLASH

8

3

1

40

2097152 words

2M

SYNCHRONOUS

85 Cel

-20 Cel

2MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3

Not Qualified

1.2 mm

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN BISMUTH

GULL WING

.5 mm

DUAL

NOR TYPE

10 mm

M50FW040K5G by STMicroelectronics

M50FW040K5G

STMicroelectronics

M50FW040K5G from STMicroelectronics is a 4Mb NOR Flash memory with a synchronous operating mode and a supply voltage of 3.3V. It features an access time of 11ns, operates b/w -20 °C to 85 °C, and comes in a compact chip carrier package. Ideal for embedded applications requiring reliable data storage.

11 ns

YES

NO

R-PQCC-J32

e3

13.97 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

SYNCHRONOUS

85 Cel

-20 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3.3

3

Not Qualified

YES

3.56 mm

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

MATTE TIN

J BEND

1.27 mm

QUAD

NO

NOR TYPE

11.43 mm

M50FW040N5G by STMicroelectronics

M50FW040N5G

STMicroelectronics

M50FW040N5G from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, featuring an 11ns max access time and operating in synchronous mode. It comes in a compact SOIC package, ideal for space-constrained applications. This versatile memory supports dual terminal positioning and operates b/w -20 °C to 85 °C.

11 ns

YES

NO

R-PDSO-G40

18.4 mm

4194304 bit

FLASH

8

1

8

40

524288 words

512K

SYNCHRONOUS

85 Cel

-20 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

3

Not Qualified

YES

1.2 mm

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NO

NOR TYPE

10 mm

M50FW040NB5G by STMicroelectronics

M50FW040NB5G

STMicroelectronics

M50FW040NB5G from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, featuring an 11ns max access time and operating in synchronous mode. It comes in a compact SOIC-32 package, ideal for space-constrained applications. With a temp range of -20 °C to 85 °C, it's perfect for industrial use.

11 ns

YES

NO

R-PDSO-G32

e3/e6

14 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

SYNCHRONOUS

85 Cel

-20 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

3.3

3

Not Qualified

YES

1.2 mm

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NO

NOR TYPE

8 mm

MTFDCAE002SAJ-1M1 by Micron Technology

MTFDCAE002SAJ-1M1

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; Package Shape: RECTANGULAR; Programming Voltage (V): 5; Peak Reflow Temperature (C): 260; JESD-30 Code: R-XXMA-X;

R-XXMA-X

FLASH

1

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

260

5

Not Qualified

NO

CMOS

COMMERCIAL

UNSPECIFIED

UNSPECIFIED

30

MTFDCAE004SAJ-1N1 by Micron Technology

MTFDCAE004SAJ-1N1

Micron Technology

MTFDCAE004SAJ-1N1 by Micron Technology is a flash memory with 1 function. It has a rectangular package style and can withstand a max reflow temperature of 260°C for 30 seconds. With a programming voltage of 5V, it is suitable for commercial applications requiring CMOS flash memory technology.

R-XXMA-X

FLASH

1

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

260

5

Not Qualified

NO

CMOS

COMMERCIAL

UNSPECIFIED

UNSPECIFIED

30

MTFDCAE008SAJ-1N1 by Micron Technology

MTFDCAE008SAJ-1N1

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; Package Shape: RECTANGULAR; JESD-609 Code: e1; No. of Functions: 1; Package Style (Meter): MICROELECTRONIC ASSEMBLY;

R-XXMA-X

e1

FLASH

1

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

5

Not Qualified

NO

CMOS

COMMERCIAL

TIN SILVER COPPER

UNSPECIFIED

UNSPECIFIED

LH28F160S5HT-TW by Sharp Corporation

LH28F160S5HT-TW

Sharp Corporation

LH28F160S5HT-TW by Sharp Corp is a 1MX16 NOR Flash Memory with 90ns access time, operating at -40 to 85°C. It features a supply voltage of 4.5-5.5V, parallel interface, and industrial temperature grade. Ideal for applications requiring high-speed data storage in compact devices like smartphones and IoT gadgets.

90 ns

8

R-PDSO-G56

e6

18.4 mm

16777216 bit

FLASH

16

3

1

56

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

250

5

Not Qualified

1.19 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Tin/Bismuth (Sn/Bi)

GULL WING

.5 mm

DUAL

10

NOR TYPE

14 mm

LH28F320SKTD-ZR by Sharp Corporation

LH28F320SKTD-ZR

Sharp Corporation

LH28F320SKTD-ZR by Sharp Corp is a 32Mb NOR Flash Memory with 2Mx16 organization, operating at 3V. It features a fast access time of 120ns and operates in parallel mode. Ideal for commercial applications requiring high-speed data storage in compact devices.

120 ns

8

R-PDSO-G56

18.4 mm

33554432 bit

FLASH

16

1

56

2097152 words

2M

ASYNCHRONOUS

70 Cel

0 Cel

2MX16

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3

Not Qualified

1.19 mm

3.6 V

2.7 V

3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NOR TYPE

14 mm

AT29BV010A-12JU by Atmel

AT29BV010A-12JU

Atmel

Atmel's AT29BV010A-12JU is a 128Kx8 NOR flash memory chip with 3V nominal voltage. Operating in asynchronous mode, it offers fast access time of 120ns and low standby current of 0.00005Amp. Ideal for industrial applications requiring reliable non-volatile memory storage.

120 ns

BOTTOM/TOP

NO

YES

R-PQCC-J32

e3

13.97 mm

1048576 bit

FLASH

8

2

1

1,1,1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

245

3/3.3

2.7

Not Qualified

3.556 mm

8K,112K,8K

.00005 Amp

Flash Memories

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

20 ms

AT29C040A-90TU by Atmel

AT29C040A-90TU

Atmel

Atmel's AT29C040A-90TU is a 512Kx8 NOR flash memory with 2K sectors and 256-word pages. Operating at 5V, it offers fast access time of 90ns and supports asynchronous mode. Ideal for industrial applications requiring reliable non-volatile memory in small outline packages.

90 ns

BOTTOM/TOP

NO

YES

R-PDSO-G32

e3

18.4 mm

4194304 bit

FLASH

8

3

1

2K

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

256

PARALLEL

260

5

5

Not Qualified

1.2 mm

256

.0003 Amp

Flash Memories

40 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

10 ms

AT29LV020-10TU by Atmel

AT29LV020-10TU

Atmel

Atmel's AT29LV020-10TU is a 256Kx8 NOR flash memory with 3.3V supply, operating at -40 to 85°C. It features asynchronous mode, 100ns access time, and 1K sectors. Ideal for industrial applications requiring fast data access and reliable non-volatile storage in compact designs.

100 ns

BOTTOM/TOP

NO

YES

R-PDSO-G32

e3

18.4 mm

2097152 bit

FLASH

8

3

1

1K

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

3

Not Qualified

1.2 mm

256

.00005 Amp

Flash Memories

15 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

YES

NOR TYPE

8 mm

20 ms

AT29LV512-12TU by Atmel

AT29LV512-12TU

Atmel

Atmel's AT29LV512-12TU is a 64KX8 NOR flash memory with 512 sectors, operating at 3.3V. It offers 10000 write/erase cycles, 120ns access time, and supports asynchronous mode. Ideal for industrial applications requiring reliable non-volatile memory in a small outline package.

120 ns

NO

YES

10000 Write/Erase Cycles

R-PDSO-G32

e3

18.4 mm

524288 bit

FLASH

8

3

1

512

32

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

128

PARALLEL

260

3.3

3

Not Qualified

1.2 mm

128

.00005 Amp

Flash Memories

15 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

20 ms

AT29C512-70JU by Atmel

AT29C512-70JU

Atmel

AT29C512-70JU by Atmel is a 64KX8 NOR type flash memory chip with 512 sectors of 128 words each. Operating at 5V, it offers fast access time of 70ns and endurance of 10k write/erase cycles. Ideal for industrial applications requiring reliable parallel memory storage in compact form factor.

70 ns

NO

YES

10000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

524288 bit

FLASH

8

2

1

512

32

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

128

PARALLEL

245

5

5

Not Qualified

3.556 mm

128

.0003 Amp

Flash Memories

50 mA

5.25 V

4.75 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

40

YES

NOR TYPE

11.43 mm

10 ms

AT29C512-90JU by Atmel

AT29C512-90JU

Atmel

AT29C512-90JU by Atmel is a 64KX8 NOR flash memory chip with 512 sectors, operating at 5V. It has an endurance of 10k write/erase cycles, max access time of 90ns, and supports data polling. Ideal for industrial applications requiring reliable non-volatile memory with fast access times.

90 ns

AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION

NO

YES

10000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

524288 bit

FLASH

8

2

1

512

32

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

128

PARALLEL

245

5

5

Not Qualified

3.556 mm

128

.0003 Amp

Flash Memories

50 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

40

YES

NOR TYPE

11.43 mm

10 ms

AT29C010A-90JU by Atmel

AT29C010A-90JU

Atmel

AT29C010A-90JU by Atmel is a 128Kx8 NOR flash memory chip with asynchronous operation, 90 ns access time, and 5V programming voltage. It is ideal for industrial applications requiring fast data polling and 3-STATE output characteristics in a compact chip carrier package.

90 ns

BOTTOM/TOP

NO

YES

R-PQCC-J32

e3

13.97 mm

1048576 bit

FLASH

8

2

1

1,1,1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

245

5

5

Not Qualified

3.556 mm

8K,112K,8K

.00003 Amp

Flash Memories

50 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

40

YES

NOR TYPE

11.43 mm

10 ms

AT29C020-70TU by Atmel

AT29C020-70TU

Atmel

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 32; Package Code: TSOP1; Package Shape: RECTANGULAR; Toggle Bit: YES;

70 ns

BOTTOM/TOP

NO

YES

R-PDSO-G32

e3

18.4 mm

2097152 bit

FLASH

8

3

1

1K

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

5

Not Qualified

1.2 mm

256

.0003 Amp

Flash Memories

40 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

10 ms

AT29C010A-70JU by Atmel

AT29C010A-70JU

Atmel

Atmel's AT29C010A-70JU is a 128Kx8 NOR flash memory chip with 131,072 words. Operating at 5V, it has a max access time of 70ns and supports asynchronous mode. Ideal for industrial applications requiring fast data polling and parallel programming with a temperature range of -40 to 85°C.

70 ns

BOTTOM/TOP

NO

YES

R-PQCC-J32

e3

13.97 mm

1048576 bit

FLASH

8

2

1

1,1,1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

245

5

5

Not Qualified

3.556 mm

8K,112K,8K

.00003 Amp

Flash Memories

50 mA

5.25 V

4.75 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

40

YES

NOR TYPE

11.43 mm

10 ms

M50LPW116N5G by STMicroelectronics

M50LPW116N5G

STMicroelectronics

M50LPW116N5G from STMicroelectronics is a 2M x 8 NOR Flash memory with a max access time of 11 ns and operates at a nominal voltage of 3.3V. It features a compact SOIC package, ideal for space-constrained applications. This synchronous device supports dual terminals and offers robust performance in various electronic systems.

11 ns

TOP

YES

NO

R-PDSO-G40

e3

18.4 mm

16777216 bit

FLASH

8

1

1,2,1,30,16

40

2097152 words

2M

SYNCHRONOUS

85 Cel

-20 Cel

2MX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,32K,64K,4K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

MT29F2G08AACWP:CTR by Micron Technology

MT29F2G08AACWP:CTR

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Qualification: Not Qualified;

R-PDSO-G48

e3

18.4 mm

2147483648 bit

FLASH

8

1

48

268435456 words

256M

ASYNCHRONOUS

70 Cel

0 Cel

256MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3

Not Qualified

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

SLC NAND TYPE

12 mm

MX29LV040CQI-90G by Macronix

MX29LV040CQI-90G

Macronix

MX29LV040CQI-90G by Macronix is a 512KX8 NOR flash memory with a max access time of 90 ns. It operates at a nominal voltage of 3V and has a temperature grade of industrial. This flash memory is commonly used in applications that require high-speed data storage and retrieval.

90 ns

YES

YES

YES

R-PQCC-J32

e3

14.05 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3/3.3

3

Not Qualified

3.55 mm

64K

.000005 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin (Sn)

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

MX29LV400CBTI-70G by Macronix

MX29LV400CBTI-70G

Macronix

Macronix's MX29LV400CBTI-70G is a 48-terminal NOR flash memory with 4MX16 organization, operating at 3V. It offers fast access time of 70ns and supports asynchronous mode. Ideal for industrial applications requiring high-density parallel memory with common flash interface.

70 ns

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e3

18.4 mm

67108864 bit

FLASH

16

3

1

1,2,1,7

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.000005 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin (Sn)

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

MX29F040CQC-70G by Macronix

MX29F040CQC-70G

Macronix

Macronix MX29F040CQC-70G is a 512Kx8 NOR flash memory chip with 70ns access time and 100,000 write/erase cycles. Ideal for commercial applications requiring fast data polling and asynchronous operation in a compact chip carrier package.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e3

14.05 mm

4194304 bit

FLASH

8

3

1

8

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

260

5

5

Not Qualified

3.55 mm

64K

.000005 Amp

Flash Memories

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Tin (Sn)

J BEND

1.27 mm

QUAD

40

YES

NOR TYPE

11.43 mm

MX29LV800CBXEI-70G by Macronix

MX29LV800CBXEI-70G

Macronix

Macronix's MX29LV800CBXEI-70G is an 8MX16 NOR flash memory with 8388608 words, operating at 3V. It features a low profile grid array package and offers fast access time of 70ns. Ideal for industrial applications requiring high-density memory with parallel interface.

70 ns

8

BOTTOM

YES

YES

YES

R-PBGA-B48

e1

8 mm

134217728 bit

FLASH

16

1

1,2,1,15

48

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

3/3.3

3

Not Qualified

YES

1.3 mm

16K,8K,32K,64K

.000005 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

W19B320ABT7H by Winbond Electronics

W19B320ABT7H

Winbond Electronics

W19B320ABT7H by Winbond Electronics is a NOR flash memory with 2MX16 organization and 8,63 sectors. It operates at a voltage of 3V and has a max access time of 70ns. This flash memory is commonly used in applications that require high-speed data storage and retrieval.

70 ns

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e3

18.4 mm

33554432 bit

FLASH

16

3

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-20 Cel

2MX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

8K,64K

.000005 Amp

Flash Memories

45 mA

3.6 V

2.7 V

3

YES

CMOS

OTHER

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F010B70K6E by STMicroelectronics

M29F010B70K6E

STMicroelectronics

M29F010B70K6E from STMicroelectronics is a 1Mb NOR Flash memory with a 5V supply, featuring an asynchronous operating mode and 70 ns max access time. It supports industrial applications with -40 °C to 85 °C temp range and offers 100k write/erase cycles. This compact chip carrier design ensures reliable performance in various electronic devices.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

1048576 bit

FLASH

8

1

8

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

250

5

5

Not Qualified

3.56 mm

16K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

40

YES

NOR TYPE

11.43 mm

MT29F4G08BABWPET by Micron Technology

MT29F4G08BABWPET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Sectors/Size: 4K;

18 ns

YES

NO

R-PDSO-G48

e3

18.4 mm

4294967296 bit

FLASH

8

1

4K

48

536870912 words

512M

ASYNCHRONOUS

85 Cel

-40 Cel

512MX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

2K

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.0001 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

M29F010B45K6E by STMicroelectronics

M29F010B45K6E

STMicroelectronics

M29F010B45K6E from STMicroelectronics is a 1Mb NOR Flash memory with a 5V supply, featuring an asynchronous operating mode and a max access time of 45 ns. It supports industrial applications with -40 °C to 85 °C temp range and offers 100k write/erase cycles. This compact chip carrier design ensures reliable performance in various electronic devices.

45 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

1048576 bit

FLASH

8

1

8

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

250

5

5

Not Qualified

3.56 mm

16K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

40

YES

NOR TYPE

11.43 mm

M29F010B70N6E by STMicroelectronics

M29F010B70N6E

STMicroelectronics

M29F010B70N6E from STMicroelectronics is a NOR flash memory with 128K x 8 organization, operating at 5V. It features a max access time of 70 ns and supports up to 100,000 write/erase cycles. Ideal for industrial applications requiring reliable data storage in compact designs.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PDSO-G32

e3/e6

18.4 mm

1048576 bit

FLASH

8

1

8

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

TSSOP

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

5

5

Not Qualified

1.2 mm

16K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

NOT SPECIFIED

YES

NOR TYPE

8 mm

M29F200BB50N3 by STMicroelectronics

M29F200BB50N3

STMicroelectronics

M29F200BB50N3 from STMicroelectronics is a 2Mbit NOR Flash memory with a 5V supply, ideal for automotive applications. It features a max access time of 50 ns, supports up to 100K write/erase cycles, and operates in asynchronous mode. Its compact SOIC package ensures efficient surface mounting.

50 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e0

18.4 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

125 Cel

-40 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F200BB70N6E by STMicroelectronics

M29F200BB70N6E

STMicroelectronics

M29F200BB70N6E from STMicroelectronics is a 2Mbit NOR Flash memory with a 5V supply, featuring a max access time of 70 ns and endurance of 100K write/erase cycles. Its compact SOIC package makes it ideal for industrial applications. Operating b/w -40 °C to 85 °C ensures reliability in harsh environments.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e3/e6

18.4 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

40

YES

NOR TYPE

12 mm

M29F200BT70N6E by STMicroelectronics

M29F200BT70N6E

STMicroelectronics

M29F200BT70N6E from STMicroelectronics is a 2Mbit NOR Flash memory with a 5V supply, featuring a max access time of 70 ns and endurance of 100K write/erase cycles. It operates asynchronously in a compact SOIC package, ideal for industrial applications. With dual terminals and a wide temp range (-40 °C to 85 °C), it ensures reliable performance in demanding environments.

70 ns

TOP BOOT BLOCK

8

TOP

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e3/e6

18.4 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

40

YES

NOR TYPE

12 mm

M29F040B45K6E by STMicroelectronics

M29F040B45K6E

STMicroelectronics

M29F040B45K6E from STMicroelectronics is a 512Kx8 NOR Flash memory with a 5V supply, ideal for industrial applications. It features an asynchronous operating mode, max access time of 45 ns, and supports up to 100k write/erase cycles. This compact chip carrier design ensures reliable performance in harsh environments.

45 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

5

Not Qualified

3.56 mm

64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

M29F040B70N6E by STMicroelectronics

M29F040B70N6E

STMicroelectronics

M29F040B70N6E from STMicroelectronics is a 512Kx8 NOR Flash memory with a 5V supply, ideal for industrial applications. It features an asynchronous mode, operates b/w -40 °C to 85 °C, and supports up to 100k write/erase cycles. Its compact SOIC package ensures efficient space utilization in electronic designs.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PDSO-G32

e3/e6

18.4 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

5

5

Not Qualified

1.2 mm

64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

NOT SPECIFIED

YES

NOR TYPE

8 mm

M29W040B55K6E by STMicroelectronics

M29W040B55K6E

STMicroelectronics

M29W040B55K6E from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, ideal for industrial applications. It features an asynchronous mode, 100k write/erase cycles, and operates b/w -40 °C to 85 °C. Its compact design ensures efficient surface mounting in various devices.

55 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3.3

3

Not Qualified

3.56 mm

64K

.0001 Amp

Flash Memories

20 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

M29W040B70N6E by STMicroelectronics

M29W040B70N6E

STMicroelectronics

M29W040B70N6E from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, ideal for industrial applications. It features an asynchronous operating mode, 70 ns max access time, and supports up to 100K write/erase cycles. Its compact SOIC package ensures efficient space utilization in designs.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PDSO-G32

e3/e6

18.4 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

3/3.3

2.7

Not Qualified

1.2 mm

64K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

NOT SPECIFIED

YES

NOR TYPE

8 mm

M29W040B90K1E by STMicroelectronics

M29W040B90K1E

STMicroelectronics

M29W040B90K1E from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, featuring an asynchronous operating mode and a max access time of 90 ns. It supports up to 100,000 write/erase cycles, making it ideal for embedded applications. With its compact chip carrier design and commercial temperature grade, it's perfect for space-constrained devices.

90 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

4194304 bit

FLASH

8

3

1

8

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3/3.3

2.7

Not Qualified

3.56 mm

64K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

M29W200BB70N6E by STMicroelectronics

M29W200BB70N6E

STMicroelectronics

M29W200BB70N6E from STMicroelectronics is a 2Mbit NOR Flash memory with a 3.3V supply, featuring a max access time of 70 ns and endurance of 100K write/erase cycles. Its compact SOIC package makes it ideal for industrial applications. Operating in asynchronous mode, it ensures reliable data storage across various temperatures.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e3/e6

20 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

40

YES

NOR TYPE

12 mm

M29W200BT70N6E by STMicroelectronics

M29W200BT70N6E

STMicroelectronics

M29W200BT70N6E from STMicroelectronics is a 2Mbit NOR Flash memory with a 3.3V supply, featuring a max access time of 70 ns and endurance of 100K write/erase cycles. Its compact SOIC package makes it ideal for industrial applications. Operating b/w -40 °C to 85 °C ensures reliability in harsh environments.

70 ns

TOP BOOT BLOCK

8

TOP

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e3/e6

20 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

40

YES

NOR TYPE

12 mm

AT49BV163D-70TU by Atmel

AT49BV163D-70TU

Atmel

Atmel's AT49BV163D-70TU is a 1MX16 NOR flash memory with 8K,64K sector size. Operating at -40 to 85 °C, it has a standby current of 0.000025A and access time of 70ns. Ideal for industrial applications requiring fast data access and reliable non-volatile storage.

70 ns

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e3

18.4 mm

16777216 bit

FLASH

16

3

1

8,31

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

8K,64K

.000025 Amp

Flash Memories

25 mA

3.6 V

2.65 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F400BB70N6E by STMicroelectronics

M29F400BB70N6E

STMicroelectronics

M29F400BB70N6E from STMicroelectronics is a 5V NOR Flash memory with a 256Kx16 organization, ideal for industrial applications. It features a max access time of 70 ns and supports up to 100,000 write/erase cycles. Its compact SOIC package ensures efficient surface mounting.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e3/e6

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,7

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

40

YES

NOR TYPE

12 mm

M29F400BT70N6E by STMicroelectronics

M29F400BT70N6E

STMicroelectronics

M29F400BT70N6E from STMicroelectronics is a 5V NOR Flash memory with a 256Kx16 organization, ideal for industrial applications. It features a max access time of 70 ns and supports up to 100k write/erase cycles. Its compact SOIC package ensures efficient surface mounting.

70 ns

TOP BOOT BLOCK

8

TOP

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e3/e6

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,7

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

40

YES

NOR TYPE

12 mm