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MTFDCAE004SAJ-1N1

Micron Technology

MTFDCAE004SAJ-1N1 by Micron Technology

MTFDCAE004SAJ-1N1 by Micron Technology is a flash memory with 1 function. It has a rectangular package style and can withstand a max reflow temperature of 260°C for 30 seconds. With a programming voltage of 5V, it is suitable for commercial applications requiring CMOS flash memory technology.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,716 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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5,716

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-

-

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Digiode

USA . 1,483 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,483

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-

-

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Chip Stock

USA . 590 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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590

-

-

-

-

Nova Conductors

Japan . 200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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200

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Bristol Electronics

USA . 6 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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6

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,474 parts In-Stock

1+ parts

$7.000

100+ parts

-

1k+ parts

-

10k+ parts

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1,474

$7.000

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AZTECH Wire

Italy . 462 parts In-Stock

1+ parts

$12.350

100+ parts

-

1k+ parts

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10k+ parts

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462

$12.350

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

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2,000

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-

-

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Corphita

USA . 203 parts In-Stock

1+ parts

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100+ parts

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203

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Overview

Experience the incredible speed and reliability of the MTFDCAE004SAJ-1N1 by Micron Technology. As a leading manufacturer in flash memory technology, Micron guarantees exceptional quality and performance. This flash memory device is perfect for a wide range of applications, offering seamless data storage and transfer capabilities. With its innovative design and cutting-edge technology, it provides customers with unrivaled value and benefits. Say goodbye to slow loading times and hello to instant access to your files. Upgrade to the MTFDCAE004SAJ-1N1 today and experience the difference for yourself.

Feature Benefit Bullets

No. of Functions: 1

The fact that this flash memory product has only one function makes it a great choice for simplicity and ease of use.

Package Shape: RECTANGULAR

The rectangular package shape of this flash memory allows for better space utilization and efficient placement on circuit boards.

Package Style (Meter): MICROELECTRONIC ASSEMBLY

The microelectronic assembly package style ensures reliability and durability in various electronic applications.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time of 30 seconds at peak reflow temperature, this flash memory product is designed to withstand high-temperature soldering processes effectively.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C guarantees excellent thermal stability, making this flash memory suitable for demanding applications.

Programming Voltage (V): 5

With a programming voltage of 5 volts, this flash memory offers compatibility with a wide range of devices and allows for quick and efficient data programming.

Temperature Grade: COMMERCIAL

Designed for commercial use, this flash memory product ensures reliable performance within standard operating temperature ranges, making it a reliable choice for various industrial applications.

Technology: CMOS

The CMOS technology used in this flash memory enables low power consumption, higher integration, and improved reliability, making it a preferable option for energy-efficient devices.

Memory IC Type: FLASH

Being a flash memory IC type, this product provides non-volatile storage capabilities, fast read/write operations, and high data retention, making it ideal for applications requiring frequent data access and storage.

Technical Specifications

Flash Memory MTFDCAE004SAJ-1N1 attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-XXMA-X

Memory IC Type:

No. of Functions:

1

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Peak Reflow Temperature (C):

260

Programming Voltage (V):

5

Qualification:

Not Qualified

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

UNSPECIFIED

Terminal Position:

UNSPECIFIED

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MTFDCAE004SAJ-1N1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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