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MTFDHBK512TDP-1AT12AIYY

Micron Technology

MTFDHBK512TDP-1AT12AIYY by Micron Technology

Micron Technology's MTFDHBK512TDP-1AT12AIYY is a RECTANGULAR flash memory with 512GX8 organization and TLC NAND type. Operating in ASYNCHRONOUS mode, it offers 549755813888 words capacity suitable for INDUSTRIAL applications at temperatures ranging from -40 to 95 °C.

Median Price

$359.190

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 500 parts In-Stock

1+ parts

$359.190

100+ parts

-

1k+ parts

-

10k+ parts

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500

$359.190

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-

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Verical

USA . 500 parts In-Stock

1+ parts

$359.190

100+ parts

-

1k+ parts

-

10k+ parts

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500

$359.190

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-

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EBV Elektronik

Germany . 50 parts In-Stock

1+ parts

-

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-

1k+ parts

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50

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-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,348 parts In-Stock

1+ parts

$222.110

100+ parts

-

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2,348

$222.110

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NAC Semi

USA . 128 parts In-Stock

1+ parts

$370.330

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128

$370.330

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Vyrian

USA . 8,799 parts In-Stock

1+ parts

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8,799

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Rotakorn

Sweden . 3,000 parts In-Stock

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3,000

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Chip Stock

USA . 640 parts In-Stock

1+ parts

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640

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Nova Conductors

Japan . 150 parts In-Stock

1+ parts

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150

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 270 parts In-Stock

1+ parts

$198.730

100+ parts

-

1k+ parts

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270

$198.730

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Corphita

USA . 1,472 parts In-Stock

1+ parts

$210.420

100+ parts

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1,472

$210.420

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Continental Prestige Electronics

USA . 169 parts In-Stock

1+ parts

$215.980

100+ parts

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169

$215.980

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Argo Parts USA

USA . 584 parts In-Stock

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584

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Aranea Global

USA . 500 parts In-Stock

1+ parts

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500

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Infinite Electronics LLP (Excess)

. 105 parts In-Stock

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105

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Overview

Unleash the power of cutting-edge technology with the MTFDHBK512TDP-1AT12AIYY by Micron Technology. As a leader in flash memory solutions, Micron offers unparalleled quality and reliability in every product. This flash memory device is perfect for a wide range of applications, from industrial settings to consumer electronics. Experience lightning-fast performance and seamless data storage with the MTFDHBK512TDP-1AT12AIYY, providing you with the value and benefits you need to stay ahead in today's fast-paced world.

Feature Benefit Bullets

Package Shape: RECTANGULAR

The rectangular package shape allows for a more compact and space-efficient design, making it suitable for use in small electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent read and write operations, providing flexibility and efficiency in data handling.

Maximum Operating Temperature: 95 °C

The high maximum operating temperature of 95 °C ensures reliable performance even in challenging environmental conditions.

Organization: 512GX8

The 512GX8 organization indicates a high capacity of 512 gigabits with a width of 8 bits, offering ample storage for data-intensive applications.

Technology: CMOS

CMOS technology provides low power consumption and high speed operation, making the flash memory efficient and responsive.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures that the flash memory can withstand harsh industrial environments with fluctuations in temperature.

Technical Specifications

Flash Memory MTFDHBK512TDP-1AT12AIYY attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-XSMA-N

Memory Density:

4398046511104 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Words:

549755813888 words

No. of Words Code:

512G

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512GX8

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

SINGLE

Type:

TLC NAND TYPE

Trade Compliance

MTFDHBK512TDP-1AT12AIYY Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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