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MTFDHBL512TDQ-1AT12ATYY

Micron Technology

MTFDHBL512TDQ-1AT12ATYY by Micron Technology

Micron Technology's MTFDHBL512TDQ-1AT12ATYY is a RECTANGULAR flash memory with 512GX8 organization and TLC NAND type. Operating in ASYNCHRONOUS mode, it has an industrial temperature grade of -40 to 105 °C, making it suitable for high-performance applications.

Median Price

$258.890

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 702 parts In-Stock

1+ parts

$258.890

100+ parts

$218.944

1k+ parts

-

10k+ parts

-

702

$258.890

$218.944

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 75 parts In-Stock

1+ parts

$245.946

100+ parts

-

1k+ parts

-

10k+ parts

-

75

$245.946

-

-

-

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$253.435

100+ parts

-

1k+ parts

-

10k+ parts

-

10

$253.435

-

-

-

Vyrian

USA . 6,386 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,386

-

-

-

-

Chip Stock

USA . 720 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

720

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 570 parts In-Stock

1+ parts

$18.457

100+ parts

-

1k+ parts

-

10k+ parts

-

570

$18.457

-

-

-

Ampacity Inc.

Singapore . 642 parts In-Stock

1+ parts

$220.060

100+ parts

-

1k+ parts

-

10k+ parts

-

642

$220.060

-

-

-

Corphita

USA . 2,170 parts In-Stock

1+ parts

$233.001

100+ parts

-

1k+ parts

-

10k+ parts

-

2,170

$233.001

-

-

-

Aranea Global

USA . 500 parts In-Stock

1+ parts

$248.366

100+ parts

-

1k+ parts

$238.432

10k+ parts

-

500

$248.366

-

$238.432

-

Continental Prestige Electronics

USA . 2,234 parts In-Stock

1+ parts

$253.435

100+ parts

-

1k+ parts

-

10k+ parts

$248.366

2,234

$253.435

-

-

$248.366

Argo Parts USA

USA . 2,262 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,262

-

-

-

-

Overview

Experience unparalleled quality and reliability with the MTFDHBL512TDQ-1AT12ATYY by Micron Technology. As a leading manufacturer in the industry, Micron Technology ensures top-notch performance and durability in their products. This Flash Memory device is perfect for a wide range of applications, offering customers unmatched value and benefits. Trust Micron Technology to deliver cutting-edge technology that meets your needs and exceeds your expectations. Choose the MTFDHBL512TDQ-1AT12ATYY for superior performance and peace of mind.

Feature Benefit Bullets

Surface Mount: YES

Surface mount allows for easy installation and less space consumption, making it suitable for compact devices.

Package Shape: RECTANGULAR

Rectangular shape is a standard form factor that is compatible with a wide range of devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent and flexible access to memory, leading to improved performance.

Maximum Operating Temperature: 105 °C

High maximum operating temperature ensures reliability in various environmental conditions.

Organization: 512GX8

512G x 8 organization provides a large capacity and high-speed data transfer.

Minimum Operating Temperature: -40 °C

Wide operating temperature range enables usage in extreme cold environments.

Terminal Position: BOTTOM

Bottom terminal position allows for easy mounting and integration into circuit boards.

Type: TLC NAND TYPE

TLC NAND type offers high density and cost-effective storage solutions.

Temperature Grade: INDUSTRIAL

Industrial temperature grade ensures reliability and stability in harsh industrial settings.

Technology: CMOS

CMOS technology provides low power consumption and high reliability.

Terminal Form: BALL

Ball terminal form facilitates easy soldering and connection in manufacturing processes.

No. of Words: 549755813888 words

Large number of words capacity allows for storing extensive data.

Memory Width: 8

8-bit memory width provides fast data access and transfer speeds.

No. of Words Code: 512G

512G words code indicates high storage capacity suitable for data-intensive applications.

Memory Density: 4398046511104 bit

High memory density enables storing large amounts of data in a compact form factor.

Memory IC Type: FLASH MODULE

Flash module type offers non-volatile memory storage with fast read and write speeds.

Technical Specifications

Flash Memory MTFDHBL512TDQ-1AT12ATYY attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-XBGA-B

Memory Density:

4398046511104 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Words:

549755813888 words

No. of Words Code:

512G

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512GX8

Package Body Material:

UNSPECIFIED

Package Shape:

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Position:

BOTTOM

Type:

TLC NAND TYPE

Trade Compliance

MTFDHBL512TDQ-1AT12ATYY Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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