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MTFDKCC960TFR-1BC1ZABYY

Micron Technology

MTFDKCC960TFR-1BC1ZABYY by Micron Technology

Micron Technology's MTFDKCC960TFR-1BC1ZABYY is a RECTANGULAR MICROELECTRONIC ASSEMBLY Flash Memory with 960GX8 organization, TLC NAND Type, and 8246337208320 bit memory density. It operates b/w 0 to 70 °C and contains 1030792151040 words. Ideal for high-density storage applications requiring reliable performance in various temperature conditions.

Median Price

$350.135

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 12 parts In-Stock

1+ parts

$266.960

100+ parts

$257.100

1k+ parts

-

10k+ parts

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12

$266.960

$257.100

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DigiKey

USA . 9 parts In-Stock

1+ parts

$316.270

100+ parts

$281.127

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-

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9

$316.270

$281.127

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Element14

Singapore . 2 parts In-Stock

1+ parts

$384.000

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-

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2

$384.000

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Newark

USA . 3 parts In-Stock

1+ parts

$1,426.280

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3

$1,426.280

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Edge Electronics

USA . 5 parts In-Stock

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5

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,713 parts In-Stock

1+ parts

$255.493

100+ parts

-

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1,713

$255.493

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Vyrian

USA . 4,461 parts In-Stock

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4,461

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Chip Stock

USA . 230 parts In-Stock

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230

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Nova Conductors

Japan . 51 parts In-Stock

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51

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 459 parts In-Stock

1+ parts

$5.001

100+ parts

-

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459

$5.001

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Ampacity Inc.

Singapore . 14 parts In-Stock

1+ parts

$191.000

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14

$191.000

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Continental Prestige Electronics

USA . 2 parts In-Stock

1+ parts

$193.450

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2

$193.450

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Corphita

USA . 2,100 parts In-Stock

1+ parts

$242.046

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2,100

$242.046

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Argo Parts USA

USA . 1,096 parts In-Stock

1+ parts

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1,096

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Aranea Global

USA . 100 parts In-Stock

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100

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Overview

Unlock the power of innovation with the MTFDKCC960TFR-1BC1ZABYY by Micron Technology. This cutting-edge flash memory device offers unmatched quality and reliability, perfect for a wide range of applications. Whether you're a tech enthusiast or a professional in need of top-tier storage solutions, this product delivers value, speed, and performance like no other. Experience the advantages of Micron Technology's expertise and take your projects to the next level with this exceptional memory module.

Feature Benefit Bullets

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient use of space and easy integration into various devices.

Package Style (Meter): MICROELECTRONIC ASSEMBLY

The microelectronic assembly style ensures high precision and reliability in the manufacturing process.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this flash memory can be used in a wide range of environments without overheating.

Organization: 960GX8

The organization of 960GX8 allows for efficient data storage and retrieval, making this flash memory ideal for high-performance applications.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature ensures that this flash memory can operate reliably even in cold environments.

Type: TLC NAND TYPE

The TLC NAND type offers a good balance between cost, capacity, and performance, making this flash memory a cost-effective choice for many applications.

Technology: CMOS

The CMOS technology used in this flash memory enables low power consumption and high speed, making it suitable for battery-powered devices and high-performance systems.

No. of Words: 1030792151040 words

The high number of words supported by this flash memory provides ample storage capacity for large amounts of data.

Memory Width: 8

The memory width of 8 helps optimize data transfer speeds and efficiency, enhancing the overall performance of this flash memory.

No. of Words Code: 960G

The 960G code signifies the specific configuration and capacity of this flash memory, making it easy to identify and integrate into a system.

Memory Density: 8246337208320 bit

The high memory density of this flash memory allows for the storage of a large amount of data in a compact form factor, perfect for space-constrained applications.

Memory IC Type: FLASH MODULE

Being a flash module, this product offers flexibility and scalability in terms of storage capacity and performance, making it a versatile choice for various applications.

Technical Specifications

Flash Memory MTFDKCC960TFR-1BC1ZABYY attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-XXMA-X

Memory Density:

8246337208320 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Words:

1030792151040 words

No. of Words Code:

960G

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

960GX8

Package Body Material:

UNSPECIFIED

Package Code:

XMA

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Surface Mount:

NO

Technology:

CMOS

Terminal Form:

UNSPECIFIED

Terminal Position:

UNSPECIFIED

Type:

TLC NAND TYPE

Trade Compliance

MTFDKCC960TFR-1BC1ZABYY Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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