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MTFDHBK256TDP-1AT12AIYY

Micron Technology

MTFDHBK256TDP-1AT12AIYY by Micron Technology

Micron Technology's MTFDHBK256TDP-1AT12AIYY is a RECTANGULAR flash memory with 256GX8 organization and TLC NAND type. Operating in ASYNCHRONOUS mode, it offers a wide temperature range suitable for INDUSTRIAL applications. With MICROELECTRONIC ASSEMBLY package style, this CMOS technology-based device has a memory density of 2199023255552 bit.

Median Price

$159.985

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 320 parts In-Stock

1+ parts

$159.580

100+ parts

$137.150

1k+ parts

-

10k+ parts

-

320

$159.580

$137.150

-

-

DigiKey

USA . 29 parts In-Stock

1+ parts

$160.390

100+ parts

$130.822

1k+ parts

-

10k+ parts

-

29

$160.390

$130.822

-

-

EBV Elektronik

Germany . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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100

-

-

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-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,291 parts In-Stock

1+ parts

$152.370

100+ parts

-

1k+ parts

-

10k+ parts

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2,291

$152.370

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-

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Vyrian

USA . 6,764 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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6,764

-

-

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Chip Stock

USA . 770 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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770

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NAC Semi

USA . 56 parts In-Stock

1+ parts

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56

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 12 parts In-Stock

1+ parts

$136.330

100+ parts

-

1k+ parts

-

10k+ parts

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12

$136.330

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Corphita

USA . 85 parts In-Stock

1+ parts

$144.351

100+ parts

-

1k+ parts

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10k+ parts

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85

$144.351

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Continental Prestige Electronics

USA . 28 parts In-Stock

1+ parts

$152.640

100+ parts

-

1k+ parts

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10k+ parts

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28

$152.640

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Argo Parts USA

USA . 5,265 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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5,265

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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2,000

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Aranea Global

USA . 50 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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50

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Overview

Discover the unparalleled quality and reliability of the MTFDHBK256TDP-1AT12AIYY by Micron Technology, a leading manufacturer in the industry. This flash memory device offers exceptional performance and versatility, making it ideal for a wide range of applications. With its cutting-edge technology and industrial-grade temperature grade, this product guarantees superior functionality and durability. Upgrade your system with the MTFDHBK256TDP-1AT12AIYY and experience seamless operation and increased efficiency like never before. Unlock the endless possibilities this innovative product has to offer and elevate your performance to new heights.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular shape makes it easy to install and integrate into various devices and systems.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible and efficient data access, improving overall performance.

Package Style (Meter): MICROELECTRONIC ASSEMBLY

Microelectronic assembly provides compact size and high reliability, ideal for space-constrained applications.

Maximum Operating Temperature: 95 °C

High maximum operating temperature ensures reliable performance even in demanding industrial environments.

Organization: 256GX8

256GX8 organization offers high capacity and efficient data storage capabilities.

Minimum Operating Temperature: -40 °C

Wide operating temperature range allows for use in extreme conditions without compromising performance.

Terminal Position: SINGLE

Single terminal position simplifies installation and reduces potential connection errors.

Type: TLC NAND TYPE

TLC NAND technology offers high storage density and reliability, making it a cost-effective choice for data storage.

Temperature Grade: INDUSTRIAL

Industrial temperature grade ensures stability and performance in harsh industrial environments.

Technology: CMOS

CMOS technology provides low power consumption and high speed operation, enhancing overall efficiency.

Terminal Form: NO LEAD

No lead terminal form is environmentally friendly and complies with RoHS regulations.

No. of Words: 274877906944 words

High number of words allows for storing a large amount of data efficiently.

Memory Width: 8

8 memory width enables fast data transfer and processing, improving overall system performance.

No. of Words Code: 256G

256G words code represents a high capacity storage solution suitable for a wide range of applications.

Memory Density: 2199023255552 bit

High memory density offers ample storage space for large data sets, making it suitable for data-intensive applications.

Memory IC Type: FLASH MODULE

Flash module design provides fast read and write speeds, ideal for applications requiring quick data access.

Technical Specifications

Flash Memory MTFDHBK256TDP-1AT12AIYY attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-XSMA-N

Memory Density:

2199023255552 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Words:

274877906944 words

No. of Words Code:

256G

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256GX8

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

SINGLE

Type:

TLC NAND TYPE

Trade Compliance

MTFDHBK256TDP-1AT12AIYY Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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