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MTFDHBL512TDP-1AT12AIYY

Micron Technology

MTFDHBL512TDP-1AT12AIYY by Micron Technology

MTFDHBL512TDP-1AT12AIYY by Micron Technology is a rectangular flash memory with 512GX8 organization, TLC NAND type, and industrial temperature grade. It operates asynchronously with a wide memory width of 8 bits. Ideal for applications requiring high-density storage in industrial environments.

Median Price

$229.776

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 50 parts In-Stock

1+ parts

$222.783

100+ parts

$189.260

1k+ parts

-

10k+ parts

-

50

$222.783

$189.260

-

-

DigiKey

USA . 12 parts In-Stock

1+ parts

$236.770

100+ parts

$200.249

1k+ parts

-

10k+ parts

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12

$236.770

$200.249

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-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,149 parts In-Stock

1+ parts

$117.506

100+ parts

-

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2,149

$117.506

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Vyrian

USA . 3,995 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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3,995

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Chip Stock

USA . 490 parts In-Stock

1+ parts

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100+ parts

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490

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Nova Conductors

Japan . 200 parts In-Stock

1+ parts

-

100+ parts

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200

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 42 parts In-Stock

1+ parts

$105.140

100+ parts

-

1k+ parts

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10k+ parts

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42

$105.140

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Corphita

USA . 712 parts In-Stock

1+ parts

$111.321

100+ parts

-

1k+ parts

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10k+ parts

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712

$111.321

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Continental Prestige Electronics

USA . 62 parts In-Stock

1+ parts

$221.180

100+ parts

-

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10k+ parts

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62

$221.180

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

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5,000

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Argo Parts USA

USA . 1,415 parts In-Stock

1+ parts

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1,415

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Aranea Global

USA . 50 parts In-Stock

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100+ parts

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50

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Overview

Experience the unmatched quality and reliability of Micron Technology with the MTFDHBL512TDP-1AT12AIYY flash memory. Designed for industrial applications, this TLC NAND type memory module offers a wide operating temperature range and superior performance. With 512Gx8 organization and 8-bit memory width, this product provides ample storage capacity for your data needs. Trust in Micron's expertise to deliver cutting-edge technology that exceeds expectations. Elevate your projects with the precision and efficiency of Micron Technology.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for easy and reliable installation on a circuit board, making this product convenient to use in various electronic devices.

Package Shape: RECTANGULAR

Rectangular package shape ensures compatibility with standard board layouts and facilitates efficient use of space on the board.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible and independent read and write commands, enhancing the overall performance and versatility of the product.

Maximum Operating Temperature: 95 °C

With a high maximum operating temperature, this product can withstand demanding environmental conditions, making it suitable for industrial applications.

Organization: 512GX8

The organization of 512Gx8 provides ample capacity and efficient data storage capability for high-performance devices.

Minimum Operating Temperature: -40 °C

Ability to operate at low temperatures makes this product reliable in harsh environments or extreme conditions.

Terminal Finish: TIN SILVER COPPER

The terminal finish of tin, silver, and copper ensures good connectivity and resistance to corrosion, extending the product's lifespan.

Terminal Position: BOTTOM

Bottom terminal position simplifies the integration process and offers a secure connection to the circuit board.

Peak Reflow Temperature: 260 C

The high peak reflow temperature ensures proper soldering during assembly, contributing to the overall reliability of the product.

Type: TLC NAND TYPE

Triple-level cell (TLC) NAND technology offers a balance between cost, performance, and durability, making this product a cost-effective and efficient choice for storage solutions.

Temperature Grade: INDUSTRIAL

Industrial temperature grade means this product is designed to operate reliably in challenging industrial environments, making it suitable for rugged applications.

Technology: CMOS

Complementary metal-oxide-semiconductor (CMOS) technology enables low power consumption, high speed, and reliable performance, enhancing the overall efficiency of the product.

Terminal Form: BALL

Ball terminal form facilitates easy soldering and handling during the assembly process, ensuring a reliable connection on the circuit board.

No. of Words: 549755813888 words

Large number of words indicates high storage capacity, making this product suitable for applications that require extensive data storage.

Memory Width: 8

Memory width of 8 ensures efficient data transfer and processing, enhancing the overall performance of the product.

No. of Words Code: 512G

The 512G word code correlates with the product's organization, providing a standardized way to manage and access the data stored in the memory.

Memory Density: 4398046511104 bit

High memory density offers significant storage capacity within a compact form factor, making this product ideal for space-constrained applications.

Memory IC Type: FLASH MODULE

The use of Flash memory IC type ensures fast read and write speeds, low power consumption, and reliable data retention, making this product a desirable choice for high-performance applications.

Technical Specifications

Flash Memory MTFDHBL512TDP-1AT12AIYY attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-XBGA-B

JESD-609 Code:

e1

Memory Density:

4398046511104 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Words:

549755813888 words

No. of Words Code:

512G

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512GX8

Package Body Material:

UNSPECIFIED

Package Shape:

Peak Reflow Temperature (C):

260

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Type:

TLC NAND TYPE

Trade Compliance

MTFDHBL512TDP-1AT12AIYY Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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