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MTFDDAV480TDS-1AW1ZABYY

Micron Technology

MTFDDAV480TDS-1AW1ZABYY by Micron Technology

Micron Technology's MTFDDAV480TDS-1AW1ZABYY is a 480GX8 TLC NAND flash memory with 3.3V programming voltage. Operating in asynchronous mode, it has a memory density of 4123168604160 bit and operates b/w 0 to 70 °C. Ideal for microelectronic assemblies, this rectangular package measures 80mm x 22mm x 3.28mm and features a serial interface with no lead terminals.

Median Price

$119.495

Lifecycle Status

Suppliers In-Stock

9

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1k+

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eBay

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insight.com

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Acme Micro-System

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mouser.com

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Chip Stock

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Nova Conductors

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Corohmni

South Africa . 3,026 parts In-Stock

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Ampacity Inc.

Singapore . 1,176 parts In-Stock

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Advanced Electronics

New Zealand . 3,225 parts In-Stock

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AZTECH Wire

Italy . 350 parts In-Stock

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Microchip USA

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Overview

Unleash the power of cutting-edge technology with the MTFDDAV480TDS-1AW1ZABYY by Micron Technology. As a leader in flash memory innovation, Micron Technology delivers superior quality and reliability with this product. Ideal for a wide range of applications, this flash memory device offers unmatched value and benefits to customers. Experience lightning-fast data storage and retrieval, seamless operation, and top-notch performance with the MTFDDAV480TDS-1AW1ZABYY. Upgrade your devices today and enjoy the advantages of Micron Technology's exceptional products.

Feature Benefit Bullets

Package Shape RECTANGULAR

Rectangular package shape allows for easy integration and placement in various electronic devices.

Operating Mode ASYNCHRONOUS

Asynchronous operation provides flexibility and efficiency in data retrieval and storage.

Nominal Supply Voltage / Vsup (V) 3.3

Nominal supply voltage of 3.3V ensures compatibility with a wide range of systems and devices.

No. of Terminals 75

75 terminals offer versatile connectivity options for interfacing with other components.

Maximum Operating Temperature 70 °C

With a maximum operating temperature of 70°C, this flash memory can function reliably in various environments.

Organization 480GX8

The organization of 480GX8 ensures efficient storage and retrieval of data in a structured manner.

Minimum Operating Temperature 0 °C

Minimum operating temperature of 0°C allows for reliable performance even in colder conditions.

Maximum Seated Height 3.28 mm

Compact maximum seated height of 3.28 mm enables space-efficient design and integration.

Width 22 mm

Width of 22 mm offers a balance between compact size and ease of handling.

Minimum Supply Voltage (Vsup) 3.14 V

Minimum supply voltage of 3.14V ensures stable operation without exceeding power requirements.

Type TLC NAND TYPE

TLC NAND type technology provides a good balance between cost-effectiveness and performance.

Length 80 mm

Length of 80 mm provides sufficient storage capacity without compromising on space efficiency.

Programming Voltage (V) 3.3

Programming voltage of 3.3V ensures reliable data programming and storage.

Technology CMOS

CMOS technology offers low power consumption and high speed operation for optimized performance.

Parallel or Serial SERIAL

Serial operation allows for efficient data transfer and communication with other components.

Terminal Form NO LEAD

No lead terminal form reduces the risk of damage during handling and integration.

No. of Words 515396075520 words

Large number of words capacity ensures ample storage for a wide range of applications and data.

Memory Width 8

Memory width of 8 bits provides efficient data processing and storage capabilities.

No. of Words Code 480G

With a code of 480G, this flash memory offers a specific configuration for optimized performance.

Maximum Supply Voltage (Vsup) 3.46 V

Maximum supply voltage of 3.46V ensures safe and reliable operation without exceeding voltage limits.

Memory Density 4123168604160 bit

High memory density of 4123168604160 bits provides ample storage for large data sets and applications.

Memory IC Type FLASH MODULE

Flash module memory IC type offers fast read and write speeds for efficient data processing.

Technical Specifications

Flash Memory MTFDDAV480TDS-1AW1ZABYY attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-XSMA-N75

Length:

80 mm

Memory Density:

4123168604160 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

75

No. of Words:

515396075520 words

No. of Words Code:

480G

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

480GX8

Package Body Material:

UNSPECIFIED

Package Code:

SMA

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Parallel or Serial:

SERIAL

Programming Voltage (V):

3.3

Maximum Seated Height:

3.28 mm

Maximum Supply Voltage (Vsup):

3.46 V

Minimum Supply Voltage (Vsup):

3.14 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

NO

Technology:

CMOS

Terminal Form:

NO LEAD

Terminal Position:

SINGLE

Type:

TLC NAND TYPE

Width:

22 mm

Trade Compliance

MTFDDAV480TDS-1AW1ZABYY Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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