Loading...

MTFDHBM1T0TDP-1AT12AIYY

Micron Technology

MTFDHBM1T0TDP-1AT12AIYY by Micron Technology

Micron Technology's MTFDHBM1T0TDP-1AT12AIYY is a RECTANGULAR Flash Memory with 1TX8 organization, TLC NAND type, and CMOS technology. Operating in ASYNCHRONOUS mode at -40 to 95 °C, it offers 1099511627776 words capacity for industrial applications.

Median Price

$466.348

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 651 parts In-Stock

1+ parts

$530.140

100+ parts

-

1k+ parts

-

10k+ parts

-

651

$530.140

-

-

-

Verical

USA . 46 parts In-Stock

1+ parts

-

100+ parts

$402.555

1k+ parts

$402.555

10k+ parts

$402.555

46

-

$402.555

$402.555

$402.555

WPG Americas

USA . 38 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

38

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$410.223

100+ parts

-

1k+ parts

-

10k+ parts

-

10

$410.223

-

-

-

Digiode

USA . 2,489 parts In-Stock

1+ parts

$441.398

100+ parts

-

1k+ parts

-

10k+ parts

-

2,489

$441.398

-

-

-

Vyrian

USA . 8,792 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,792

-

-

-

-

Chip Stock

USA . 260 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

260

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 291 parts In-Stock

1+ parts

$14.074

100+ parts

-

1k+ parts

-

10k+ parts

-

291

$14.074

-

-

-

Aranea Global

USA . 50 parts In-Stock

1+ parts

$402.018

100+ parts

-

1k+ parts

$385.937

10k+ parts

-

50

$402.018

-

$385.937

-

Corphita

USA . 1,356 parts In-Stock

1+ parts

$418.167

100+ parts

-

1k+ parts

-

10k+ parts

-

1,356

$418.167

-

-

-

Authorized Procurement Solutions

USA . 7,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,000

-

-

-

-

Continental Prestige Electronics

USA . 4,135 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,135

-

-

-

-

Argo Parts USA

USA . 3,878 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,878

-

-

-

-

Overview

Upgrade your storage capabilities with the MTFDHBM1T0TDP-1AT12AIYY by Micron Technology. As a leading manufacturer in the industry, Micron Technology delivers high-quality flash memory solutions that are perfect for a wide range of applications. Whether you're looking to enhance your system's performance or increase storage capacity, this product offers exceptional value, reliability, and efficiency. Experience faster data transfer speeds, seamless operation, and increased productivity with the MTFDHBM1T0TDP-1AT12AIYY. Trust Micron Technology to provide cutting-edge technology that meets your storage needs.

Feature Benefit Bullets

Surface Mount: YES

Being surface mountable makes it easy to integrate into various electronic devices, saving space and reducing assembly complexity.

Package Shape: RECTANGULAR

Rectangular shape provides a standard form factor that is widely compatible with different electronic designs and layouts.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible and independent access to memory locations, enhancing overall performance and efficiency.

Maximum Operating Temperature: 95 °C

With a high maximum operating temperature, this flash memory can withstand tough industrial environments without compromising performance.

Organization: 1TX8

1TX8 organization offers a balanced combination of storage capacity and data transfer speed, suitable for various applications.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures reliable operation even in extreme cold conditions, making it suitable for diverse environments.

Terminal Position: BOTTOM

Bottom terminal position makes it easy to connect and integrate the flash memory into circuit boards or systems with standardized mounting.

Type: TLC NAND TYPE

TLC NAND type offers a good balance between cost and performance, making it a cost-effective solution for storage applications.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature tolerance ensures stable performance in harsh industrial environments, enhancing reliability and longevity.

Technology: CMOS

CMOS technology provides low power consumption and high integration density, contributing to energy efficiency and compact design.

Terminal Form: BALL

Ball terminal form enables easy soldering and secure connection, facilitating smooth integration into electronic devices or systems.

No. of Words: 1099511627776 words

Large number of memory words offers ample storage capacity for storing data, programs, and other digital information.

Memory Width: 8

8-bit memory width allows for processing and handling of data in chunks, improving data transfer speeds and overall system performance.

No. of Words Code: 1T

1T words code enables efficient addressing and access to individual memory words, optimizing data retrieval and storage operations.

Memory Density: 8796093022208 bit

High memory density provides ample storage capacity in a compact form factor, suitable for applications requiring large data storage.

Memory IC Type: FLASH MODULE

Being a flash module, this memory IC offers fast read/write speeds, high reliability, and non-volatile storage, making it ideal for various applications.

Technical Specifications

Flash Memory MTFDHBM1T0TDP-1AT12AIYY attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-XBGA-B

Memory Density:

8796093022208 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Words:

1099511627776 words

No. of Words Code:

1T

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1TX8

Package Body Material:

UNSPECIFIED

Package Shape:

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Position:

BOTTOM

Type:

TLC NAND TYPE

Trade Compliance

MTFDHBM1T0TDP-1AT12AIYY Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19