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MTFDHBE7T6TDF-1AW4ZABYY

Micron Technology

MTFDHBE7T6TDF-1AW4ZABYY by Micron Technology

Micron Technology's MTFDHBE7T6TDF-1AW4ZABYY is a RECTANGULAR MICROELECTRONIC ASSEMBLY with 7.68TX8 organization, TLC NAND TYPE, and 67553994410557 bit memory density. It operates in ASYNCHRONOUS mode at temperatures from 0 to 70 °C, suitable for FLASH MODULE applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,196 parts In-Stock

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4,196

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Chip Stock

USA . 610 parts In-Stock

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610

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Nova Conductors

Japan . 200 parts In-Stock

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200

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Digiode

USA . 143 parts In-Stock

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143

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 953 parts In-Stock

1+ parts

$6.000

100+ parts

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953

$6.000

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Andel Nordic

Denmark . 3,005 parts In-Stock

1+ parts

$11.546

100+ parts

-

1k+ parts

$11.084

10k+ parts

$11.084

3,005

$11.546

-

$11.084

$11.084

AZTECH Wire

Italy . 1,154 parts In-Stock

1+ parts

$13.320

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1,154

$13.320

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Microchip USA

USA . 422 parts In-Stock

1+ parts

$30.414

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422

$30.414

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Continental Prestige Electronics

USA . 2,497 parts In-Stock

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2,497

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Corphita

USA . 183 parts In-Stock

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183

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Argo Parts USA

USA . 143 parts In-Stock

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143

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Aranea Global

USA . 50 parts In-Stock

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50

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Overview

Experience the exceptional quality and reliability of Micron Technology with the MTFDHBE7T6TDF-1AW4ZABYY Flash Memory. This versatile component is perfect for a wide range of applications, from consumer electronics to industrial equipment. With its superior performance and seamless integration, this product offers unbeatable value and benefits to customers looking for top-of-the-line memory solutions. Trust in Micron Technology to deliver cutting-edge technology that enhances your devices and simplifies your operations.

Feature Benefit Bullets

Surface Mount: YES

Allows for easy and compact placement on circuit boards, saving space and making it suitable for small electronic devices.

Package Shape: RECTANGULAR

Rectangular shape makes it easier for integration into designs and provides efficient use of space.

Operating Mode: ASYNCHRONOUS

Enables independent operation without the need for synchronization, offering flexibility in data access.

Maximum Operating Temperature: 70 °C

Can operate efficiently at relatively high temperatures, ensuring reliability in various environmental conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the overall performance of the flash memory.

Memory Density: 67553994410557 bit

High memory density allows for storage of large amounts of data in a compact form factor, making it suitable for applications requiring high storage capacity.

Technical Specifications

Flash Memory MTFDHBE7T6TDF-1AW4ZABYY attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-XXMA-N

Memory Density:

67553994410557 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Words:

8444249301319 words

No. of Words Code:

7.68T

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

7.68TX8

Package Body Material:

UNSPECIFIED

Package Code:

XMA

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

NO LEAD

Terminal Position:

UNSPECIFIED

Type:

TLC NAND TYPE

Trade Compliance

MTFDHBE7T6TDF-1AW4ZABYY Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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